AM28F512A Search Results

Contextual Info: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: FSNAi- AM D3 Am28F512A 512 Kilobit 64 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ C M O S low power consum ption — 30 mA maximum active current

hot electron devices

Abstract: AM28F512A
Contextual Info: FINAL Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase

Contextual Info: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current

CERAMIC LEADLESS CHIP CARRIER LCC 124

Abstract: AM28F512A
Contextual Info: FINAL Am28F512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time

Contextual Info: FINAL A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: a PRELIM INARY Am28F512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns maximum access lime ■ CMOS low power consum ption

28F512A

Contextual Info: F IN A L A M D ii Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time — Two seconds typical chip-erase including pre-programm ing

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time

intel 27c512 eprom

Abstract: W27c256 f29c51002t 27cxxx programming 27c080 transistor N100 ti 27c256 TI 27c010 27C64 EPROM programmer eprom 27c512
Contextual Info: LEAPER-3D USB HANDY FLASH IC WRITER LEAPER-3D is a compact and light programmer, very suitable for the development and servicing or the hobby environment. Combining EPROM and FLASH memory devices programming, LEAPER-3D FLASH IC WRITER supports various 8-Bit devices by its 32-pin ZIF socket.

AM28F256A

Abstract: Am29Fxxx
Contextual Info: FINAL Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase

Contextual Info: AM D ii Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

atmel 93c66

Abstract: PH29EE010 2764 EEPROM 537RU10 sst ph29ee010 556RT7A 556RT5 intel 8755 eprom 2716 537RU17
Contextual Info: Универсал ьны й програм матор Sterh ST­011 Производст во: Россия. Цен а: 17500 руб. с НД С. ST­011 имеет всего одну универсальную DIP­42 панель для программирования

AMD am2 socket pinout

Abstract: AMD socket AM2 pinout amd am2 pinout amd am2 6000 pin diagram AMD am2 socket pin amd am2 socket pin diagram AMD am2 socket pinout VOLTAGE hot electron devices pinout AM2 AMD socket AM2 pinout
Contextual Info: FINAL Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

ae29F2008

Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
Contextual Info: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.

Contextual Info: FINAL A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Blt CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS low power consumption ■ — 30 mA maximum active current — 100 nA maximum standby current

Contextual Info: V-SNA. AMD il Am28F256A 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

Contextual Info: FINA: AM D ii A m 28F010A 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from ■ High performance -1 Vt oVc c +1V Embedded Erase Electrical Bulk Chip Erase

Contextual Info: FINAL Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ ■ CMOS low power consumption — 30 mA maximum active current ■ — 0.5 second typical chip program

LEAPER-3

Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
Contextual Info: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.

PCb board zd lty 2

Abstract: AM29F200TB AM29F1001 micron sram sram book relay book regulator handbook free transistor equivalent book 2sc PM9006 AM29F0169
Contextual Info: Flash Memory Products 1994/1995 Data Book/Handbook Advanced Micro Devices FUTURE ELECTRONICS INC. 5935 Airport Road, Suite 200 Mississauga, Ontario L4V1W5 TEL.: 416 612-9200 FAX: (416) 612-9185 T O L L F R E E 1 -8 0 0 -2 6 8 -7 9 4 8 Flash M e m o ry P ro d u cts

PH29EE010

Abstract: d27c010a NEC D2732 16FA03 Siemens M812 N87C51 M5M28F102AJ-XX m824 m5m28f102avp D8752BH
Contextual Info: P800 Device Support List Version 1.0 Please consult device specific information at the end of this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts AL7 1LT, U.K. Tel +44 1707 332148 Fax +44 1707 371503 sales@stag.co.uk techsupport@stag.co.uk