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00BL4B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488170L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w o rds by 9 bits and capable o f bursting up to 256 bytes of data at 2 ns per byte. The use o f Rambus S ignaling |
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PD488170L 18M-BIT 18-Megabit P32G6-65A | |
A/TDA 7977Contextual Info: IB M 1 1 D 1 3 6 0 E IB M 1 1 E 1 3 6 0 E IB M 1 1 D 2 3 6 0 E IB M 1 1 E 2 3 6 0 E 1M/2M x 36 DRAM Module Features • 72-Pin Single-ln-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tcAC CAS Access Time 15ns 18ns tAA Access Time From Address |
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72-Pin 0002CPS IBM11D2360E IBM11E2360E IBM11D1360E IBM11E1360E SA14-4313 03H7149) SA14-4309 03H7148) A/TDA 7977 | |
L50HContextual Info: IB M 1 1 M 1 7 3 0 B IB M 1 1 M 1 7 3 0 B B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: • 1Mx72 Fast Page Mode DIMM - • Performance: -60 |
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1Mx72 110ns 130ns IBM11M1730B IBM11M1730BB 50H4347 SA14-4607-02 L50H | |
Contextual Info: IB M 1 1 M 4 7 3 0 H IB M 1 1 M 4 7 3 0 H B 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • 4Mx72 Dual Bank Fast Page Mode DIMM • Performance: • System Performance Benefits: |
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4Mx72 130ns 110ns 0Q0M72fl IBM11M4730H IBM11M4730HB 00047ST | |
Contextual Info: IBM11M4730C 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for ECC applications System Performance Benefits: • 4Mx72 Fast Page Mode DIMM - • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tcAC |
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IBM11M4730C 4Mx72 110ns 130ns | |
Contextual Info: IBM0117400 IBM0117400M IBM0117400B IBM0117400P 4M x 4 11/11 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version) |
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IBM0117400 IBM0117400M IBM0117400B IBM0117400P 35Qis 350ns) 256ms 128ms, 43G9649 SA14-4201 | |
Contextual Info: IBM11N4645B/C IBM11N4735B/C 4M x 64/72 DRAM MODULE • System Performance Benefits: Features • 168 Pin JED EC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 4Mx64, 4Mx72 Extended Data Out Page Mode DIMMs • Performance: -60 -70 Wc RAS Access Time |
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IBM11N4645B/C IBM11N4735B/C 4Mx64, 4Mx72 104ns 124ns 0000M52 | |
Contextual Info: I =¥= = = = •= IB M 0 3 8 3 2 9 P Q 6 IB M 0 3 8 3 2 9 N Q 6 Advance 256K x 32 Synchronous Graphics RAM Features • Fully synchronous; all signals registered on pos itive edge of system clock. • Internal pipelined operation; column address can be changed every clock cycle. |
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IBM038329PQ6 IBM038329NQ6 MS-026/Varlation 27H6281 000117c! | |
Contextual Info: IB M 1 1 S 8 3 2 0 H P 8M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: • • • • • • 60 W c RAS Access Time 60ns I tcAC CAS Access Time 15ns I AA Access Time From Address 30ns I RC Cycle Time 110ns I |
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72-Pin 110ns 256ms IBM11S8320HP 8Mx32 | |
Contextual Info: IBM0116405 IBM0116405M IBM0116405B IBM0116405P 4M x 4 12/10 EDO DRAM Features • Low Power Dissipation - Active max - 85mA / 75 mA / 65 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: CMOS Inputs (max) - 1.0 mA (SP version) - 0.2 mA (LP version) - Self Refresh (LP version only) |
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IBM0116405 IBM0116405M IBM0116405B IBM0116405P 28H4720 28H4720. 350ns) 28H4720 | |
Contextual Info: IB M 1 1 N 1 6 6 4 5 B /C IB M 1 1 N 1 6 7 3 5 B /C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64,16Mx72 Extended Data Out Page Mode DIMMs • Performance: • Extended Data Out EDO Mode, Read-ModifyWrite Cycles |
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16Mx64 16Mx72 104ns IBM11N16645B/C IBM11N16735B/C 00bl4b | |
Contextual Info: I B M 1 1N1645L 1M X 64 DRAM MODULE Features • System Performance Benefits: • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module -Non buffered for increased performance -Reduced noise 35 V ss/V qc P^s -Byte write, byte read accesses |
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1N1645L 1Mx64 104ns 124ns IBM11N1645L | |
Contextual Info: IBM11N1645B IBM11N1735B 1M x 64/72 DRAM Module mmnri r r i,„ , ^", | Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module |
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IBM11N1645B IBM11N1735B 1Mx72 104ns 124ns 75H3414 SA14-4621-00 IBM11N1735B SA14-4621 | |
Contextual Info: IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • Read-Modlfy-Write 16,777,216 word by 4 bit organization Performance: • Single 3.3 ± 0.3V power supply • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time |
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IBM0165405B IBM0165405P 104ns 145ma 155ma 135ma 130ma 27H6250 | |
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Siemens xl 532
Abstract: KCB02 SAB 529 83C166W-5M Siemens mt4 siemens multi channel timer 80C166W-MT3 Compare CISC and RISC gpr 163 80C166
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C16x-Family 80C166W/83C166W 16-Bit 80C166W 83C166W 235LD5 Siemens xl 532 KCB02 SAB 529 83C166W-5M Siemens mt4 siemens multi channel timer 80C166W-MT3 Compare CISC and RISC gpr 163 80C166 |