00B42 Search Results

BUK552

Abstract: BUK552-60A BUK552-60B T0220AB 42e0 TSLA
Contextual Info: PHILIPS INTERNATIONAL b SE ]> B 7110fiSb 00b421b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

BUK555-60A

Abstract: BUK555-60B T0220AB
Contextual Info: PHILIPS INT ER NA TI O N AL bSE D • TllQAEb 0DbM241 Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is Intended for use in

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The ^PD 431009 is a high speed, low pow er, 1 179 072 bits 131 072 w o rd s by 9 bits C M O S static RAM. The ¿iPD431009 is packed in 36-pin plastic SOJ.

BUK555-100A

Abstract: BUK555-100B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 7110flSb DDb4E4b 644 • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

BUK545

Abstract: BUK545-60A BUK545-60B
Contextual Info: PHILIPS INTERNATIONAL bSE D B 7110flSb O O b m ^ b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope.

L2720

Contextual Info: SCSTHOMSON iy L2720/2/4 LOW DROP DUAL POWER OPERATIONAL AMPLIFIERS ADVANCE DATA OUTPUT CURRENT T 0 1 A OPERATES AT LOW VOLTAGES SINGLE OR SPLIT SUPPLY LARGE COMMON-MODE AND DIFFEREN­ TIAL MODE RANGE LOW INPUT OFFSET VOLTAGE GROUND COMPATIBLE INPUTS LOW SATURATION VOLTAGE

GAL Gate Array Logic

Abstract: fdk id GAL20V8A
Contextual Info: NATL S E M I C O N D MEMORY 31E D bSQHSb ÛOb423b PRELIMINARY GAL20V8A Generic Array Logic T—46—1 3-47 General Description The NSC E2CMOStm GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology

Delta dps 240 fp

Abstract: rockwell l39 DELTA DPS 1200 rc144dpg RC144ACG 386 laptop schematic MD105 9 UN07
Contextual Info: RC144ACG Rockwell RC144ACG 3.3V, Low Power, Integrated High Speed Data/Fax/Voice Modem Device Set with Cellular Direct Connect Support INTRODUCTION FEATURES The Rockwell RC144ACG integrated data/fax/voice modem device set family supports high speed data and

Contextual Info: £B CA3262A, CA3262 Quad-Gated Inverting Power Drivers November 1995 Features Description • Independent Over-Current Limiting On Each Output The CA3262 and CA3262A are used to interface low-level logic to high current loads. Each Power Driver has four inverting switches consisting of a non-inverting logic input

MSM64172

Abstract: VQH207 P13CO
Contextual Info: O K I Semiconductor MSM64172_ Built-in Serial Port and LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION The MSM64172 is a low-power 4-bit m icrocontroller that incorporates O K I's C P U core nX-4/20. The MSM64172 has a m inim um instruction execution tim e of 5 is (@ 600 kH z and 3.0 V . The

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD78320 A ,(A1 ),(A2) 16/ 8-BIT SINGLE-CHIP MICROCOMPUTER D E S C R IP T IO N The juPD78320(A) is a 16/8-bit single-chip microcomputer that incorporates a high-performance 16-bit CPU. The ¿zPD78320(A) is one of 78K/I11 series.

Contextual Info: NEC O OD - 8 4 2 1 I n G a A s -APD M o d u l e J ABSOLUTE KAX1MUH RATINGS Ta=25*C unless noted Sy*. Min. Max. Unit Fonrard Current If — 10 mA Reverse Current Ir — 500 uk V Parameter Operating Teaperature Top -40 85 Storage Teaperature Tstg -40 85

Contextual Info: SGS-THOMSON TDA1904 4W AUDIO AMPLIFIER • HIGH OUTPUT CURRENT CAPABILITY ■ PROTECTION AGAINST CHIP OVERTEM­ PERATURE ■ LOW NOISE ■ HIGH SUPPLY VOLTAGE REJECTION ■ SUPPLY VOLTAGE RANGE: 4V TO 20V Powerdip 8 + 8 DESCRIPTION The TDA 1904 is a monolithic integrated circuit in

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _//PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The ¿¿PD43256B is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits C M OS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are w ide voltage operations.

k554

Abstract: kiv 499 BUK554-200A BUK554-200B
Contextual Info: PHILIPS INTERNATIONAL bSE D m 7110fl2h D0b423b TTS « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK555-200A

Abstract: BUK555-200B M251 T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D WM 711005t. DObMSSl 101 « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

transistor D 4515

Abstract: 100-P BUK556-60A A1730
Contextual Info: PHILIPS INTERNATIONAL bSE J> B 7110fl2b □□b42Sb Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

BUK552

Abstract: BUK552-100A BUK552-100B T0220AB
Contextual Info: bSE T> PHILIPS INTERNATIONAL m 7110aSb 00bM251 47M « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

BUK582-60A

Contextual Info: PHILIPS INTERNATIONAL bSE D • 711D6Eb D D m 2 7 û Philips Semiconductors 35*4 « P H I N Product Specification PowerMOS transistor BUK582-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode

l2720

Abstract: schematic diagram motor control dc 12v 12V DC to 24V dC converter schematic diagram l2722 L2724 L291 schematic diagram motor control
Contextual Info: SGS-THOMSON L2720/2/4 M O ^ [I[L i(g » [iK S LOW DROP DUAL POWER OPERATIONAL AMPLIFIERS ADVANCE DATA OUTPUT CURRENT TO 1 A OPERATES AT LOW VOLTAGES SINGLE OR SPLIT SUPPLY LARGE COMMON-MODE AND DIFFEREN­ TIAL MODE RANGE LOW INPUT OFFSET VOLTAGE GROUND COMPATIBLE INPUTS

P32C-100-600A

Abstract: upd431000a D431000
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT D e s c r ip tio n The /¿PD431000A is a high speed, low power, and 1,048,576 bits 1 31,072 words x 8 bits C M O S static RAM. The /¿PD431000A has two chip enable pins (CE1, CE2) to extend the capacity.