IPD431009 Search Results

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The ^PD 431009 is a high speed, low pow er, 1 179 072 bits 131 072 w o rd s by 9 bits C M O S static RAM. The ¿iPD431009 is packed in 36-pin plastic SOJ.

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431009L 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description T h e /iP D 4 3 1 0 0 9 L is a h ig h s p e e d , lo w p o w e r, 1, 179, 64 8 b its 131, 072 w o r d s b y 9 b its C M O S s ta tic R A M .

IC-3237

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The /¿PD431009 is a high speed, lo w p o w e r, 1 179 072 b its 131 072 w o rd s by 9 b its CMOS sta tic RAM. The ¿iPD431009 is packed in 36-pin p la stic SOJ.

Contextual Info: SEC ¡j PD431009 131,072 x 9-Bit Static CMOS RAM NEC Electronics Inc. October 1992 Description Pin Configuration The /JPD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­

Contextual Info: SEC iPD431009 131,072 X 9-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The ¿/PD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high­

Contextual Info: DATA SHEET Æ MOS INTEGRATED CIRCUIT C ¿¿P D 4 3 1 0 0 9 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The ¿¿PD431009 is a high speed, low power, 1 179 072 bits 131 072 words by 9 bits CMOS static RAM. The /¿PD431009 is packed in 36-pin plastic SOJ.