003T Search Results

BU326

Abstract: BU326-BU326A 331Z BU326A st bux
Contextual Info: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current

2N5458 NATIONAL SEMICONDUCTOR

Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
Contextual Info: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A

1N4740A

Abstract: 1N4742A 12 volt zener diode 1N4742A 1N4732A 1N4745A ZENER 1 BZX8SC ln4744a 1N4729A 1N4730A
Contextual Info: bar DO-41 1 Watt Zener Diodes Vi Volts Tolerance 5% lit (m A) D • b5D113D 003T513 757 « N S C S DO-41 1.3 Watt Zener Diodes n a t l s e p i i c o n d ( D I S C R E T E ) Zz (Ö ) •r (MÄ) (Volts) Tolerance 5% (mA) Zz m Ir (HA) 3.3 1N4728A 76 10 100

BU406

Abstract: BU407 N-P-N SILICON POWER TRANSISTORS t317 texas transistors
Contextual Info: TEXAS I N S T R -COPTO} ÔÔ61726 TEXAS ta INSTR DE | f l cltI17Bt. 003titi3S 62C 3 6 6 3 5 OPTO BU406, BU407 N-P-N SILICON POWER TRANSISTORS - T - 2 3 - U O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 • 60 W a t 2 5 ° C Case Temperature

E59481

Abstract: E59481 48
Contextual Info: NUMBER:RD-SDMIC2412A-5101W-LF1 Mi DATE :2006/04/07 R (REV:A1) 10/100 BASE-TX Filtered SMD Connector Module MODEL NO : RJSL-003TC1 Features: ◎ RoHS Compliant ◎ Fully shielded magnetics protect data from internally generated digital noise ◎ Reduces the overall length of the signal path for improved common mode

Contextual Info: p FINGRIP Part Numbers FG005TN*T FG 003TN‘T FG023TN*T FG026TN*T FG026-2TN*T Wire size range in mm2 Min. Max. Insulation 0 (in mm) Max. 1.00 + 1.00 1.50 1.50 1.50 + 2.50 1.50 + 2.50 0.50 0.50 Performance characteristics • C o n ta c t re s is ta n c e

X53A

Abstract: BDX63A
Contextual Info: texas~ instr -c o p t o j bs dF | 003t,bi? =i _ T-33-29_ — g§5T7^~TEXAS 62 C INSTR OPTO 36617 D BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 60 W at 25°C Case Temperature 8 A Continuous Collector Current

ASTM A38

Contextual Info: ±.010 .130 3.3mm " .4-52 (11.5mm) .376 REF (9.6mm) REF PLA N E REVISIONS DESCRIPTION REV DATE 01 o RELEA SED APPROVED 6/15/93 i8 c .040 (1.1mm) +.000 -.001 .041 DIA {1.0mm) .190-36 UNS-2B IOI.003TIR I À~1 OSSM JACK s RECOMMENDED MOUNTING HOLE .118 DIA (3.0mm)

220V-input

Abstract: SW70I 220v
Contextual Info: ELECTRONIC Dragoljub Jankovic _ microe ptt.yu SW?Oi MAIN?^ SWITCH PO W ER IN PU T 220v OACC V 0 003TA O ® 50H z L t70i CtLGQ09SCE /A jf\ £ÆOAUSSING ÇOIÇ NAZAD

BUX47A

Abstract: BUX47 BUX47B BY205-400
Contextual Info: T E X A S I N S T R -COPTO} Ô3&1726 T e x a s b5 instr DE | 0 T b l 7 5 b 003t.b41 fc, D 62C 36641 <o p t o > B U X 4 7, B U X 4 7A , BU X47B N-P-N SILICON POW ER TRANSISTORS 3 3 ' S 3 REVISED OCTOBER 1 9 8 4 125 W at 2 5 ° C Case Temperature 9 A Continuous Collector Current

2A20

Contextual Info: TEXAS INSTR -COPTO} " DE I f i ^ b l T E b S 9 6 1 7 2 6 TEXAS INSTR COPTO 62C 003t,fi54 3 36824 TIP47, TIP48, TIP49, TIP50 N-P-N SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 4 0 W at 2 5 ° C Case Temperature 1 A Continuous Collector Current

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 003T4Dfl TS1 A IAPX tJLW /^y U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications-in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V. The resistance stabilization of the

BD370

Abstract: BD371 bd372 bc557 package sot23 BC557 sot package bd373 PN3642 NATIONAL bc560 sot National PN930 BC550
Contextual Info: bffr d • bSOHBD General Purpose Amplifiers and Switches continued Devices V CE0(sust) (Volts) Min 45 NPN PNP BC550 fT@l c hpE lc •c (mA) Max Min Max mA (MHz) Min 003T516 mA NF (dB) Max 3.0 2CH P p (Am » Package (mW) ms°c 100 200 800 2.0 300 Typ 10

m34930

Abstract: m3494 M34930B1
Contextual Info: Sb E r z 7 ^ 7 D • 7T2T237 S G S -m o M S O N # 003T11S ■ s û s - SGTH t h o h s o n T~7 5 - 1¡-2 . M 3 4 9 3 0 1 2 X 8 CROSSPOINT A D VA N C E DATA ■ LOW ON RESISTANCE typ. 40Q at Vdd = 10V) ■ INTERNAL CONTROL LATCHES ■ ANALOG SIGNAL SWING CAPABILITY EQUAL

BUX47A

Abstract: BUX47 BUX47B BY205-400 silicon power transistors T35 ET
Contextual Info: TEXAS IN STR -COPTO} Ô 3Ô 1726 T EX A S TË IN S T R DE | 0 T b l 7 5 b 003t.b41 62C 3 6 6 4 1 <OPTO> BUX47, BUX47A, BUX47B N-P-N SILICON POWER TRANSISTORS 3 3 ' S 3 R E V IS E D O C TO B E R 1 9 8 4 125 W at 2 5 °C Case Temperature 9 A Continuous Collector Current

c2689

Abstract: C2689 equivalent automotive ignition tip162 T1P160 equivalent to tip162
Contextual Info: TEXAS INSTR ÌOPTO> d ìT | 8961 72 6 TEXAS INSTR OPTO 003^.^30 62C 36938 TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS R E V ISE D O C T O B E R 1 9 84 50 W at 100°C Case Temperature T-33-29 10 A Rated Continuous Collector Current

NDS8936

Contextual Info: National Semiconductor July 1996 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These IM-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

32Kx32 Synchronous

Contextual Info: PRELIMINARY KM732V599A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst On-Chip Address Counter.

KM68BV4002

Contextual Info: KM68BV4002 CMOS SRAM 512K x 8Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM68BV4002-12:170mA(Max.)

NDS8435

Contextual Info: & N a t io nal Semiconductor" M ay 19 96 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: Littelfuse Surface Mount Fuses For NANO2 Surface Mount Fuses me SMF OMNI-BLOK® Fuse Block 5U @ Molded Base Type 154 Series The RoHS Compliant SMF Omni-Blok® Fuseholder permits quick and easy replacement of Nano2® SMF surface mount fuses. The fuse block

c 3866

Abstract: TIP75 texas instruments tip75 str 6863 d TIP75B 6863D transistor 3866 transistor 3866 s
Contextual Info: TEXAS INSTR ÎOPTO> ^2 DE | f H b l T S b 62C 0D3tiôti0 36860 T-33-" TIP75, TIP75A, TIP75B, TIP75C N-P-N SILICON POWER TRANSISTORS APRIL 19 7 8 - REVISED O CTOBER 1984 65 W at 2 5 ° C C ase Temperature 5 A Peak Collector Current High-Voltage, High-Forward and Clamped Reverse Energy

H301CSRGD-100

Abstract: red 5mm LED with holder H-301C-1-100
Contextual Info: ITEM Q'TY 1 2 3 1 1 1 PART NUMBER REV. PART DESCRIPTION A T-1 3mm Bi-Leval LED Holder, 90° Mount, 100 C/L T-1 (3mm) Non-Flange LED T-1 (3mm) Non-Flange LED H-301C-1-100 3SRD 3SGD DATE DESCRIPTION APPROVED 02/28/07 Engineering Release. M. C. Ø0.118 [Ø3.0mm]TYP.

MARKING CODE SMD JW

Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E D • ô53St.0S QQBbbSa Ô m S l E ú SAB 82532 1 INTRODUCTION The Enhanced Serial Communication Controller ESCC2 SAB 82532 is a data communication device with two symmetrical serial channels. It has been designed to implement high-speed com­