003S0 Search Results

qml38535

Abstract: qml-38535
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPRO VED A_ Added changes in accordance with NOR 5962-R159-97_ 96-12-20_Raymond Monnin B Change to Table I; lC C Dp , device type column. ksr Updated boilerplate. 98-02-18 Raymond Monnin

Contextual Info: D E V E L O P M E N T DATA TIP3055T This data sheet contains advance information and specifications are subject to change without notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement TIP295ST they are primarily intended

Contextual Info: COM’L: IND: -15/25 a PALCE22V10Z Family Zero-Power 24-Pin EE CMOS Versatile PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 10 macrocells programmable as registered or combinatorial, and active high or active low to match application needs

transistor TIP3055

Abstract: power transistor tip3055 TIP3055 003S02 circuit use tip2955 transistor PNP TIP3055 TIP2955 transistor PNP TIP2955 tip3055 TRANSISTOR
Contextual Info: TIP3055 _ SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general am plifier and switching applications. P-N-P complement is T IP 2 9 5 5 . Q U IC K R E F E R E N C E D A T A

pal22v10

Abstract: AMPAL22V10APC
Contextual Info: COM’L :-7/10/15 MIL: -12/20 a Advanced Micro Devices PAL22V10 Family, AmPAL22V10/A 24-Pin TTL Versatile PAL Device DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns propagation delay and 91 MHz fMAx external ■ 10 Macrocells programmable as registered or

Contextual Info: KM44V4000BS CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

diode IN4148

Abstract: Transistor Equivalent list BDT85 IN4148 LXE18300X SC15 1250-003 BY239-800 Transistor AND DIODE Equivalent list
Contextual Info: # I » IK DISCRETE SEMICONDUCTORS SG41EET L X E 1 83 00 X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, S C 1 5 January 1992 Philips Semiconductors PHILIPS • b b S B ^ l D03SÜ73 ‘•T‘1 ■

TIP3055T

Abstract: USA060-1 transistor 8771 transistor 902
Contextual Info: DEVELOPMENT DATA TIP3055T T h is data sheet contains advance inform ation and «peclfleationi are subject to change w ithout notice. SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. W ith its p-n-p complement T IP 2 9 5 S T they are prim arily intended

Contextual Info: Us e r ’s M a n u al <£>2 iL 0 5 Ch apter 2 INTERFACING THE SCC/ESCC 2.1 INTRODUCTION This chapter covers the system interface requirements with the SCC Timing requirem ents for both devices are described in a general sense here, and the user should refer to the SCC Product Specification for detailed AC/DC

siemens triac

Contextual Info: 47E D • 0E3SbOS 0035056 0 ■ SIEG SIEMENS AKTIENGESELLSCHAF Programmable Digital Timer SAB 0529 Features • • • • • • • • Bipolar 1C Direct operation from AC line or DC supply possible Time base is 50 Hz line frequency Triac triggering with voltage synchronization for

MIPS r2000

Abstract: SRA32 R2000 mips uPD30400
Contextual Info: E C ELECTRONICS INC b7E D • 1^1 1^1 I l L . bM27S2S QG3flT73 521 M N E C E VR4000PC pPD30400 64-Bit RISC Microprocessor: On-Chip Prim ary Cache Memory NEC Electronics Inc. Preliminary Information_ November Description

Contextual Info: Advanced Micro Devices Am27C4096 4 Megabit 262,144 X 16-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single + 5 V power supply ■ Fast access time ■ ± 10% power supply tolerance standard on most speeds — 90 ns ■ Low power consumption ■ 100% Flashrite programming

AM33C93A

Contextual Info: Advanced Micro Devices Am27C040 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ ±10% power supply tolerance standard on most speeds — 90 ns ■ 100% Flashrite programming ■ Low power consumption — Typical programming time of 1 minute

Contextual Info: J _ TIP140 TIP141 TIP142 V SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. SOT-93 plastic envelope. P-N-P complements are TIP145, TIP146

Audio Power Amplifiers

Abstract: QM96 hybrid audio amplifier OM961 OM991 philips hybrid qm961 hi-fi hi-fi system g0350
Contextual Info: Product specification P hilips Sem iconductors Hybrid integrated circuit hHI audio power amplifiers OM961/OM991 PIN CONFIGURATION DESCRIPTION PINNING The OM961 and OM991 are Ihin film hybrid integrated circuit hi-fi audio amplifiers for sinusoidal output power up to 60 W and 120 W

1M823-1

Abstract: 1N827 DIODE 1N827 1N821-1 1N823 DIODE 1N825 1N829-1 1N825 1N827-1 1N821-1 JANTX
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 November 1994 MIL-S-19500/159H 16 Hav 1994 SUPERSEDING MIL-S-19500/159G 22 January 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE,

TH6P04T6V5CL

Abstract: TH6P04T25CL TH6P04 SGS-Thomson T-62-11 6P04T6V5CL
Contextual Info: 3DE » •' 712^337 O D Sm b b 7 SGSTHOMSON S-THOMSON ''P i?2 *I 1 TH6P04T6V5CL TH6P04T25CL r «leiditgrasKS S 6 ■ : TRANSIL ARRAY FOR DATA LINE PROTECTION D ESC RIPTIO N Developed specially for data line protection at the PC Board Level, the component offers 8 protective

pal22v10

Abstract: stag ppz
Contextual Info: ADV MICRO PLA/PLE/ARRAYS 4ÔE J> COM’L 025752b DG3207Ö T -<3 P A L 2 2 V 1 0 -7 7.5 ns 24-Pin TTL Versatile PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ 7.5 ns propagation delay and 91 MHz fMAX 10 macrocells programmable as registered or

QML-38535

Abstract: AG qd SMD CDFP3-F28 military marking symbols 1GD47D
Contextual Info: REVISIONS LTR DESCRIPTION A Corrected waveform labeling error on sheet 13. Updated boilerplate. gig DATE YR-MO-DA APPROVED 97-09-18 Raymond Monnin REV SHEET REV A A A A A SHEET 15 16 17 18 19 REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS

s3331

Contextual Info: DISCRETE SEMICONDUCTORS LXEE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 January 1992 Philips Semiconductors o PHILIPS bt,S3331 0035073 MTS Prelim inary specification PhiMps Semiconductors

44V4100

Contextual Info: KM44V4100BK CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle