0013G Search Results

WD7625LV

Abstract: 74HC04 ap 74273 multiplexer western digital 286 21SA1 104-D15 WD7625
Contextual Info: D • ^710220 0013GSÖ 134 HlilDC " T ^ 2- - ‘b ' b WD7625LV Address, Data, Hard Disk Buffers and Power Management Device 32S WESTERN DIGITAL 4 -0 S4E D ■ T71Ô22Ô QD13DST 070 H O C TABLE OF CONTENTS _. 52-3S Section Title 1.0 INTRODUCTION .

Contextual Info: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by

Contextual Info: IN T E G R A T E D C IR C U IT S UC1835 UC2835 UC3835 U N IT R O D E UC1836 UC2836 UC3836 High Efficiency Regulator Controller FEATURES DESCRIPTION The UC1835/6 families of linear controllers are optimized for the de­ sign of low cost, low dropout, linear regulators. Using an external pass

Contextual Info: 27C512A M ic r o c h ip 512K 64K x 8 CMOS EPROM FEATURES PACKAGE TYPE TSOP • High speed performance • CMOS Technology for low power consumption - 25 mA Active current - 30 n-A Standby current • Factory programming available • Auto-insertion-compatible plastic packages

BA3520F

Abstract: BA3520 th02 DIP18 rsn 313 RSN 314 1000 audio power amplifier circuit diagram
Contextual Info: BA3520 BA3520F 3 V dual pre- and power amplifier The BA3520 and BA3520F ICs are dual channel preamplifier and power amplifiers that contain all basic signal circuits necessary for a tape player. Dimensions Units : mm BA3520 (DIP18) E The preamplifiers are direct coupled and

Contextual Info: JV\Æ XAJV\ k -to-M icrow ave, Low -Noise A m plifier _General Description ♦ Single +5V Supply Operation In a typical application, the only external components needed are input and output blocking capacitors and a V c c series resistor. To im prove gain and output

Contextual Info: CY7C340 EPLD Family 0 CYPRESS Multiple Array Matrix High-Density EPLDs — VHDL simulation ViewSim Features • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions • 0.8-micron double-metal CMOS EPROM technology (CY7C34X)

BA3506A

Abstract: DIP18 pd1000
Contextual Info: BA3506A 3 V dual pre- and power amplifier The BA3506A 1C is a dual channel preamplifier and power amplifier. Dimensions Units : mm BA3506A (DIP18) The preamplifiers are direct coupled and the power amplifiers have a built-in fixed-gain NF circuit, making an output

Contextual Info: CY7C335 / CYPRESS Features • 100-MHz output registered operation • Twelve I/O macrocells, each having: — Registered, three-state I/O pins — Input and output register clock se­ lect m ultiplexer — Feed back multiplexer — Output enable OE multiplexer

L9806

Abstract: L9626 L9630 c3328 L9642 L9646 L5650 L9823 L9680 CY7C332-15HC
Contextual Info: V 12 I/O raacrocells each having: — Registered, latched, or transparent array input — A choice o f two clock sources — Global or local output enable OE — Up to 19 product terms (PTs) per output — Product term (PT) output polarity control • 192 product terms with variable

U318

Abstract: microphone Elected duplex RTD on15 LB1021
Contextual Info: as S G S - T H O n S O N 07E D | öiü 19 209 D 0013030 I | " ' ' 'f 7 S - Q 7 - f S ' m m P R E L I M IN A R Y D A T A AN A T & T P R O D U C T SPEAKERPHONE KIT LB1020AF VOICE PATH SWITCH AND LB1021AD SPECIAL AMPLIFIER re which permits steady background noise to be

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

Contextual Info: IN T E G R A T E D C IR C U IT S UC1832/3 UC2832/3 UC3832/3 UNITRQDE Precision Low Dropout Linear Controllers DESCRIPTION FEATURES Precision 1% Reference Over-Current Sense Threshold Accurate to 5% Programmable Duty-Ratio Over-Current Protection 4.5V to 36V Operation

CY7C332-25HMB

Abstract: L9646 c3328 L9806 l9634 L9680 L480 L9622 L9626 L9823
Contextual Info: CY7C332 '0 C Y P R E S S F e a tu re s • 12 I/O macrocells each having: — Registered, latched, or transparent array input — A choice of two clock sources — Global or local output enable OE — Up to 19 product terms (PTs) per output — Product terra (PT) output polarity

BA3521

Abstract: DIP18 dip18 package u3020
Contextual Info: 3 V dual pre- and power amplifier BA3521 Dimensions Units : mm The BA3521 is a dual channel preamplifier and power amplifier that contains all basic signal circuits necessary for a tape player. BA3521 (DIP18) The preamplifier is direct coupled and the power amplifier have a built-in fixed-gain

DS21

Abstract: DS21S07AE DS21S07AS DS21S07CE DS21S07CS 50 Ohm Termination pad
Contextual Info: DS21S07C PRELIM INARY DALLAS SEMICONDUCTOR DS21S07C SCSI Terminator FEATURES PIN ASSIGNMENT • Fully compliant with SCSI, SCSI-2, and emerging SCSI-3 standards • Backward compatible to the DS2107C • Provides active termination for 9 signal lines • Laser-trimmed 110 ohm termination resistors have

Contextual Info: CY7C330 '# C Y P R E S S CMOS Programmable Synchronous State Machine Three separate clocks— two inputs, one output Common pin 14-co n tro lled or product term —controlled output en­ able for each I/O pin 256 product terms—32 per pair of macrocells, variable distribution

Contextual Info: CY7C341 CY7C341B ^CYPRESS Features • 192 macrocells in 12 LABs • 8 dedicated inputs, 64 bidirectional I/O pins • 0.8-micron double-metal CMOS EPROM technology CY7C341 • Advanced 0.65-micron CMOS technology to increase performance (CY7C341B) • Programmable interconnect array

Contextual Info: 5ÛE D Hi t i T E HS MQ O K I O K I OOlBOSb 40b B O K IJ SE MI CONDUCTOR s e m i c o n d u c t o r G R OU P - r - H ê - z s - is- MSM514102A/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE G EN ER A L DESCRIPTION The MSM514102A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit.