000MB Search Results

CI EEPROM 2816

Abstract: 2816 eeprom eeprom 2816 dallas date code DS1220AD DS1220AB DS1220AD 2716 EPROM DS1220Y dallas d6122
Contextual Info: DS1220AB/AD DALLAS SEMICONDUCTOR CORP 50E D • DALLAS SEMICONDUCTOR Ebl413D 000Mb34 b I DS1220AB/AD 16K Nonvolatile SRAM 7^ FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

t462

Abstract: sony cxk58257m-12l CXK58257AP T46-2 CXK* Sony
Contextual Info: S4E SONY« D 0302303 000Mb37 0L7 « S O N Y CXK58257AP/ASP/AM •7 0L/85L/10L/12L -70LL/85LL/1OLL/12LL* 32768-word x 8-bit High Speed CMOS Static RAM ‘ SONY C O R P / C O M P O N E N T PR OD S Description CXK58257AP 28 pin DIP Plastic C X K 5 8 2 5 7 A P /A S P /A M is 262,144 bits high

D25000GE0

Abstract: D15000GE0 D9000GE0 D37000GVL0 D50000GE0 D50000GVL0 D150000VL0 D37000GVL0-1023 MIL-C-85049/48 D15000GVL0
Contextual Info: Positronic Industries www.connectpositronic.com pdf catalog of subminiature-D accessories NOTE: In order to reduce download times, we have removed the graphically intense catalog cover from this PDF catalog. If you are using a printed version in conjunction with

Contextual Info: electronic June 1992 M 67203 HI-REL DATA SHEET 2k X 9 CMOS PARALLEL FIFO FEATURES . FIRST-IN FIRST-OUT DUAL PORT MEMORY . FAST ACCESS TIME : 35 TO 55 ns . . EMPTY, FULL AND HALF FLAGS IN SINGLE DEVICE MODE WIDE TEMPERATURE RANGE : - 55°C TO + 125°C . RETRANSMIT CAPABILITY

Contextual Info: IB M 1 1 M 4 6 4 0 C IB M 1 1 M 4 6 4 0 C B 4M X 64 DRAM MODULE • Au contacts • Optimized for byte-write non-parity applications Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 4Mx64 Fast Page Mode DIMM

Contextual Info: C il^ A V % i i^ H W V Corporation ▼ HS574A/SP674A SIGNAL PROCESSING EXCELLENCE 12-Bit Sampling A/D Converters Complete 12-bit A/D Converters with SampleHold, Reference, Clock and Trt-state Outputs Low Power Dissipation — 110mW Maximum 12-Bit Linearity Over Temperature

Contextual Info: 80C26 SEEQ CMOS Ethernet Interface Adapter in 28L Package T e c h n o lo g y , In c o rp o ra te d October 1994 PRELIMINARY SEEQ AutoDUPLEX Designation Sym bol indentifies product as AutoD UPLEX device • Provides Au to D U P L E X Detect Function for Full

CNY17G-3

Abstract: CNY17G3
Contextual Info: Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF QUALITY TECHNOLOGIES CORP TMbböSl OOOMbEE M m S7E D IflTY FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with

BEL 100N TRANSISTOR PIN DIAGRAM

Abstract: AMD 586 embedded BEL 100N TRANSISTOR 111S3 BEL 100N EPE6047S 80C25 80C26 PT4152 transistor 5bt
Contextual Info: 80C26 SEEQ CMOS EtflBfflGt T e c h n o lo g y , In c o r p o r a te d Interface Adapter in 28L Package P R E LIM IN A R Y O ctober 1994 SEEQ AutoDUPLEX Designation S y m b o l » id e n tifie s p ro d u c t a s A u to D U P L E X d e v ic e • P rovides A u to D U P L E X TU D etect F u nction fo r F u ll

HY51V16404B

Abstract: HY51V16404BR60 si17 MH-750
Contextual Info: •HYUNDAI HY51V16404B Series 4M x 4-bit CMOS DRAM with Extended Data Out DESCRIPTION TheHY51V16404B is the new generation and fast dynamic RAM organizecU,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

K174YH7

Abstract: k2651 K159HT1 TBA120 k157 tba810 K159 K174YP1 K798 K140y
Contextual Info: HHTETPAJlbHblE MMKPOCXEMbI T om III 5 CCCP MOCKBA K a T a j i o r „ M H T e r p a jib H b ie M H K p o c x e M b i“ conep>KHT TexHM HeCKHe X a p ü K T e p H C T H K M H H T e r p a jlb H b lX M M K p o e x e M , KOT o p b ie 3 K c n o p T n p y e T C o b c t c k h h

CXK584000

Abstract: CXK584000M 100 10L AD CXK584000YM
Contextual Info: 54E SONY. J> m &3&E3&3 0DG4ÖS3 071 « S O N Y CXK584000TM/YM/M/P SiiSfeSKiSW 524288-word x 8-bit High Speed CMOS Static RAM SONY CORP/COMPONENT Description CXK584000TM/YM/M/P is a 4,194,304 bits high speed CMOS static RAM organized as 524,288 words by 8-bits. Polysilicon TFT cell technology realized

Contextual Info: Customer Information Sheet D RAWING N o .: SHEET M80- 000MB- X X - X X X - 0 0 - 0 0 0 3 OF 4 1 IF IN D OUBT - ASK | c | NOT TO SCALE SPECIFICATIONS: MATERIAL: MOULDING: GLASS F I L L E D PPS, U L9 4 V -0 , BLACK C O A X I P O WE R C O N T A C T : BODY, S L E E V E , INNER CO N TA CT , END PLUG = COPPER

induction cooker fault finding diagrams

Abstract: TC227 compressor catalogue Vernitron TRANSDUCER b2 str 1265 smps power supply circuit of tv ADC0804-1CD TC225 tesla MAa 741 SPICE model NTC Inrush Current Limiters Thermistor XR558CP
Contextual Info: BOOK IC11 LINEAR PRODUCTS page Selection guide Functional in dex. 5 Numerical in d e x .

Contextual Info: MICRO POWER SYSTEMS INC b lE btmMMM D GDOHßbb m HMPS MP87198 ML CM OS Very Low Power 10-Bit, Analog-to-Digital Converter with 4-Channel Mux Micro Power Systems BENEFITS FEATURES • • • • • 10-Bit Resolution Sampling Rates from <1.5 kHz to 1.0 MHz

Transistor C G 774 6-1

Abstract: C G 774 6-1 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
Contextual Info: 5SE D • A23StiGS dG04hlt. 7 ■ S IE G .* 7-^ Low Noise NPN Silicon Microwave Transistor BFQ 28 up to 4 GHz SIEMENS AKTIEN GESELLSCH AF _ BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods

s3786

Abstract: torque chart for metric brass bolts torque chart for metric PLATED bolts
Contextual Info: ECONOMICAL, 1/4 AMP ROTARY S W IT C H E S '! ORDERING INFORMATION-Single Shaft Switches -j - - Series Style: Letter s from the Choices and Limitations chart

GCD5412

Abstract: LG Semicon GCD1001S GCD4402 auto iris control 1212fh GCA325KBL lgs gcd5412 312H
Contextual Info: @ LG Semicon. Co. LTD. Description Pin Configuration The GCD5412 is a timing and sync one chip con­ troller IC with auto IRIS function for B/W CCD camera systems, which is fabricated in the LGS 0.8 i CMOS process. H3 •LLI S 3 ^^ > ■ n m ■ O NO- Q >■îi£

Contextual Info: L0+;?9=703?60&E=D;A=70 EDAEDC L0/;670*3?9700"?AED L0%@G0 B@8;=770"?6ECDBI0+D3?63B60@@DAB;?D L0 =@43=0+387DI097?5I0@>A=;3?57 L0*@!+0@>A=;3?D ->0)71-90#-/3-4980206620+)90548 .;67@AE6;@0*@ED7BC 3D35@> )@;?D0@80+3=7 ,7CD03?60&73CEB7>7?D %0+;9?C03?60%;9:D;?9

SED1560TQA

Abstract: K15 crystal liquid 73501 PA rf SED1560 series H6187 LI 1806 E 151 R mpu-28
Contextual Info: SED1560/1/2 Technical Manual Preliminary S-MOS Systems, Inc. October, 1996 Version 3.0 (Prelim inary) S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 »Tel: (408) 922-0200 • Fax: (408) 922-0238 • 7^3210^ OOÜMbDS Ô54 ■ THIS PAGE INTENTIONALLY BLANK

311P407

Abstract: positronic hdm MC8022D-50-1202.4 311P407-6S-B-12 311P407-2p-b-12 G08P1 G08S1 GSFC-S-311-P-4 311P409-3P-B-12 311P409
Contextual Info: Positronic Industries Space application Subminiature-D Connectors GSFC S-311-P-4 GSFC S-311-P-10 MIL-DTL-24308 Maximum Torque Values for 4-40 UNC Threads TORQUE Nm in-lb in-oz Phos. Bronze 0.90 8.0 128 Brass 0.68 6.0 96 Aluminum 0.45 4.0 64 Nylon 0.11 1.0

4591-100-0-0

Abstract: D25000GE0 D15000GE0 D50000GE0 D37000 D37000GVL0 D150000VL0 d37000z00 D9000GE0 D25000GVL0
Contextual Info: Catalog C-007 Rev. B POSITRONIC INDUSTRIES About Us Founded in 1966, Positronic Industries is a vertically integrated manufacturer of high quality interconnect products. Positronic has earned the worldwide reputation as a service oriented, quick-reaction, top quality connector supplier. We