0.35 Search Results

Contextual Info: G T 1 5 J 1 0 2 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 1 0 ± 0 -3 . ¿ 3 .2 ± 0 .2 2 .7 ± 0 .2 . High Input Impedance . High Speed : t£=0.35iJs Max. . Lou Saturation Voltage : VcE(sat)"*.OV(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta«250C)

Contextual Info: TO SHIBA GT15J101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -CH ANN EL IGBT G T 1 5 J 1 01 Unit in mm HIGH POWER SW ITCHING APPLICATIONS 1 5 .9 M A X M O TO R CONTROL APPLICATIONS • • • • ;S3.2 ± 0 .2 m High Input Impedance High Speed : tf=0.35/*s Max.

Contextual Info: MG100J1ZS40 TOSHIBA MG1 0 0 J 1 ZS 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35,us Max. • Low Saturation Voltage : VCE (sat) =3.5V (Max.)

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. 6 .20 + 0.51 1.00 D [. 022 ] g g_ 1.76 [.069] DIM. W /TAPE C B 0.35 [.014] TYP 3.8 2 A RECOMMENDED PAD LAYOUT TOLERANCE + . 0 0 2 UNLESS OTHERWISE NOTED

smd diode marking 271

Abstract: SIPMOS N-channel Small-Signal-Transistor
Contextual Info: BSP89 Rev. 2.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS RDS on · Enhancement mode ID · Logic Level 240 V 6 W 0.35 A PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4.5V rated lead plating; RoHS compliant

Contextual Info: ] j P E R I C O M 16-Bit Transparent D-Type Latch with 3-State Outputs Product Features Product Description • The PI74VCX Family is designed for low voltage operation, V dd = 1.8V to 3.6V Pericom Semiconductor’s PI74VCX series of logic circuits are produced in the Company’s advanced 0.35 micron CMOS

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68808 CCBPKG 0.001 pF CCB 0.29 pF LC 0.31 nH Collector LCX 0.31 nH RCpkg 0.1 Ohm Base Rbpkg 0.1 ohm Lbx LB 0.7 nH 0.7nH CCE 0.45 pF CCEPKG CCBPKG 0.35 pF 0.2 pF LEX 0.2 nH Repkg 0.15 ohm Emitter BJT NONLINEAR MODEL PARAMETERS 1

Outline Dimensions

Contextual Info: Outline Dimensions Vishay Semiconductors DO-205AB DO-9 for 240U(R) Series DIMENSIONS in millimeters (inches) 19.2 (0.76) MAX. 4.2 ( 0.17 ) MA X. 23 (0.91) plone MIN. Ø 8.9 (0.35) Ø 8.4 (0.33) Ø 27.9 (1.1) MAX. 190 (7.48) MAX. SW 32 53.3 (2.1) MAX. 10 (0.39) MAX.

8182G

Abstract: 5-PIN MARKING AK *8182G
Contextual Info: CS8182 Micropower 200 mA Low Dropout Tracking Regulator/Line Driver http://onsemi.com 8 • 200 mA Source Capability Output Tracks within ±10 mV Worst Case Low Dropout 0.35 V Typ. @ 200 mA Low Quiescent Current Thermal Shutdown Short Circuit Protection

Contextual Info: SOT-23 SOT-23 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters inches 1.15 (0.045) 8° 0.2 (0.008) 0.098 (0.004) 0.175 (0.007) 0.1 (0.004) max. 0.550 ref. (0.022 ref.) 0.45 (0.018) 0.35 (0.014) 0.35 (0.014) 0° t o 0.5 (0.020) 0.45 (0.018) 0.9 (0.035)

Ifsm

Abstract: RB160M-30 RB160M
Contextual Info: Diodes SMD Type Schottky Barrier Diode RB160M-30 SOD-123 Features Unit: mm +0.1 2.7-0.1 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 1.6-0.1 Small power mold type. Low IR High reliability +0.1 3.7-0.1 0.50 1.10 0.05 0.35 0.03 3.8 0.1 +0.05 0.1-0.02 0.128 0.1max Absolute Maximum Ratings Ta = 25

1ZS40

Abstract: ft05d
Contextual Info: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • High Input Impedance • H ighSpeed • Low Saturation Voltage 2 -FAST-ON-TAB #110 : tf=0.35,«s Max.

smd marking sb

Abstract: 1N6263W marking SB
Contextual Info: Diodes SMD Type SMALL SIGNAL DIODES 1N6263W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Low Forward Voltage Drop +0.1 3.7-0.1 Guard Ring Constuction for Transient Protection Fast Switching Time 0.50 0.1max 0.35 +0.05 0.1-0.02

transistor smd bh

Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386
Contextual Info: Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

DBS50-R104-PX-MS

Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B SPECIFICATIONS Insulator: Screw: C ABS UL94HB Steel C D D E E Series DBSXX D-Sub Backshell F Type R104 R104Style RoHS compliant Rev. Description Date Approved G Drawing Name Approved Howard Checked Lizzy Drawn Tina 0.0 ± 0.35 1 2

Contextual Info: Doc No. TT4-EA-11555 Revision. 3 Product Standards Zener Diode DZ2J1300L DZ2J1300L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

CTJ-8-08-H-BK-PX-XX

Contextual Info: 1 2 3 4 5 6 7 8 9 SPECIFICATIONS Housing material: PBT with glass fiber, UL94V-0 Contact material: Phosphor bronze 0.35mm Contact plating: Gold on contact area Tin on tails A A Conforms to FCC rules and regulations Part 68, Subpart F B B C C D D E E Series

Contextual Info: Doc No. TT4-EA-11556 Revision. 3 Product Standards Zener Diode DZ2J1400L DZ2J1400L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

CPJ-03531-M-A-N-S-BK

Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B C C Item 1 2 3 4 5 6 7 8 9 D A E Series CPJ Phone Jack F Style 03531 Ø3.5mm Side Entry PCB Mount Name Material Finish Earth Terminal C2680 t=0.45 Ag Plated Tip Spring C2680 t=0.30 Ag Plated Ring Spring C5191 t=0.25 Ag Plated Shunt Terminal C2680 t=0.35

DB2J50100L

Contextual Info: Doc No. TT4-EA-12350 Revision. 2 Product Standards Schottky Barrier Diode DB2J50100L DB2J50100L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.25 0.35 • Features 0.13 2 1.7 2.5  Short reverse recovery time trr  Low terminal capacitance Ct

Contextual Info: Doc No. TT4-EA-11548 Revision. 4 Product Standards Zener Diode DZ2J0680L DZ2J0680L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

Contextual Info: Discontinuation: F35S Series Narrow Pitch Connectors 0.35mm pitch Mated height: 1.0mm for all Contact Types PEWA Ref # ACBD257 1.17.2014 Effective Date: September 30, 2014 Last Time Buy Date: September 30, 2014 Last Time Ship Date: Discontinuation Details:

Contextual Info: Doc No. TT4-EA-11547 Revision. 4 Product Standards Zener Diode DZ2J0620L DZ2J0620L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5  Excellent rising characteristics of zener current Iz

V7-2B17D8

Abstract: V7-2B17D8-162
Contextual Info: V7-2B17D8-162 Actual product appearance may vary. V7 Series Miniature Basic Switch, Single Pole Double Throw Circuitry, 11 A at 277 Vac, Straight Lever Actuator, 0,10 N [0.35 oz] Maximum Operating Force, Silver Contacts, Quick Connect Termination Potential Applications