ZVP054 Search Results

Contextual Info: bGE D • ZETEX SEMICONDUCTORS 4 tlt:J7DS?ô ÜQD?bûS b 3 fi ■ ZETB CENTRE BASE E-LINE 'M V 'P' Channel Small Signal MOSFETs Part Number BV dss Id 'dm V mA A V Min. VcSlth Max. a •o mA ÎÎ a Max. R d S I o ii ) Id mA Pd VP w ZVP0545AM 1 -450 -45 - 0 .4

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0545A ISSUE 2 – MARCH 94 FEATURES * 450 Volt VDS * RDS on =150Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -450 V Continuous Drain Current at Tamb=25°C

ISS120

Abstract: ZVP0545G P-Channel Enhancement Mode Vertical DMOS FET DSA0037397 sot223 p-channel
Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0545G ISSUE 1 – MARCH 98 FEATURES * 450 Volt VDS * RDS on =150Ω D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS -450 V Continuous Drain Current at T amb=25°C

3412 to92

Abstract: fet to92 3TF20 ZVP054 to92 fet p channel ZVP0540A P-Channel Enhancement Mode Vertical DMOS FET VDS25 DSA003786
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0540A ISSUE 2 – MARCH 94 FEATURES * 400 Volt VDS * RDS on =150Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE -400 UNIT V Continuous Drain Current at Tamb=25°C

Contextual Info: SELECTION TABLES TABLE 2: P CHANNEL SM A LL SIGNAL M OSFETS Part B ^ dss *0 IpM / V mA A RpSlonl lD V GS Max. mA V w ^G SIth l number Min. at Ip Ü Max. mA at Pp Package ZVP0545A -4 5 0 -4 5 -0 .4 -1 .5 -4 .5 -1 150 -5 0 -1 0 0.7 E-line ZVP0545B -4 5 0 -1 0 0

Contextual Info: bOE D • ^ 7 0 3 7 0 GDG7TG3 245 Wt ZETB ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP0545 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0545G ISSUE 1 - MARCH 98_ _ FE A TU R E S ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL D ra in -S o u r c e V o lta g e V ds C o n tin u o u s D ra in C u rr e n t a t T amb=25°C

Contextual Info: ZETEX S E M I C O N D U C T O R S T SD D cn 7 D 5 7 ô 00057b? 3 95D 05767 T '3 ,1 - z s ZVP0545 P-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Ferranti

Contextual Info: PLESSEY SENICOND/DISCRETE llS D l J 7S5D533 0DDS7b7 S | ~ 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E 95D 0 5 7 6 7 T 3 1 1.5 - P-channel enhancement mode vertical D M O S FET ZVP0545 FEATURES • Com pact geometry • Fast sw itching speeds

to92 fet p channel

Abstract: ZVP0545A DSA003786 3TF20
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0545A ISSUE 2 – MARCH 94 FEATURES * 450 Volt VDS * RDS on =150Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -450 V Continuous Drain Current at Tamb=25°C

G267

Contextual Info: ZETEX 15D SEMICONDUCTORS ci ci 7 0 S 7 ñ D DOQSTbS T • ZETB 95D 0 5 7 6 5 T -31-2S P-channel enhancement mode vertical D M O S FET ZVP0540 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: PLESSEY SEMICOND/DISCRETE TS 7220533 PLES SE Y S E M I C O N D / DI SCR ET E P-channel enhancement mode vertical D M O S FET dF § 7E2QS33 ODDS?t.S 1 | 95D 05765 T'3~> -2S ZVP0540 FEATURES • Com pact geometry • Fast sw itching speeds • N o secondary breakdown

Contextual Info: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L50Q

Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M
Contextual Info: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

Contextual Info: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being

Contextual Info: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being

ZVN2106AM

Abstract: ZVP2106AM1 ZTX753M1 ZTX751M1 ZVP0535AM1 ZTX449 42-06A ZTX653M
Contextual Info: 03 PLESSEY SENI C O N D / D I SC R E T E D E I 7 2 5 0 5 3 3 0 0 0 b 7 fl0 S I ~ E-LIN E''M l' 1 The package that offers you more POWER and PERFORMANCE to meet your Surface Mount Requirements. The range of E-Line M1 products has been specially selected to meet current and future design requirements

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no