ZVN2110 Search Results

zvn2110

Abstract: G156 ZVN2110L G158
Contextual Info: PLESSEY SEMCOND/MSCRETE 7220533 PLESSEY ìT^ C ON D / DI S C R E T E S E M I C eI 7250533 0DQSt,S3 1 F 9 5D 05653 -o7 N-channel enhancement mode vertical DMOS FET ZVN2110 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •

3V02

Abstract: ZVN2110A
Contextual Info: ZVN2110A VGS= 10V 9V 2.0 1.6 ID on -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 8V 7V 1.2 6V 0.8 5V 4V 0.4 3V 20 40 60 80 100 1.6 4V 0.4 3V 2 ID= 1A 2 500mA 100mA 6 8 10 ID(on) -On-State Drain Current (Amps)

ZVN2110

Abstract: f032A ZVP2110 ZVN2110G ZVP2110G on47 3V02 DSA003736 tr48 R01-A1
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2110G VGS= 10V 9V 2.0 1.6 ID on -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 8V 7V 1.2 6V 0.8 5V 4V 0.4 3V 20 40 60 80 100 1.6 1.2 5V 4 ID= 1A 2 500mA 100mA

ZVN2110A

Abstract: s 8n DSA003782 ZVN211
Contextual Info: ZVN2110A VGS= 10V 9V 2.0 1.6 ID on -On-State Drain Current (Amps) ID(on) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 8V 7V 1.2 6V 0.8 5V 4V 0.4 3V 20 40 60 80 100 1.6 4V 0.4 3V 2 ID= 1A 2 500mA 100mA 6 8 10 ID(on) -On-State Drain Current (Amps)

Contextual Info: Not Recommended for New Design Please Use ZVN2110A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2120C ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =10Ω G D S E-Line TO92 Compatible REFER TO ZVN2120A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: SOT223 N-CHANNEL ENH AN CEM ENT ZVN2110G M O D E VERTICAL D M O S FET ISSU E 3 - OCTOBER 1995 O_ FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED PARTMARKING DETAIL COMPLEMENTARY TYPE - ZVN2110 ZVP2110G % D ABSOLUTE MAXIMUM RATINGS.

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FEATURES * 100 Volt vDS * R DS on = REFER TO ZVN2110A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT VDS 100 Continuous Drain Current at T am[j=25°C

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET GS 250 -1.6 ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω ZVP2110G ✪ D -1.4 200 COMPLEMENTARY TYPE – ZVN2110G -1.2 150 S -1.0 DS= PARTMARKING DETAIL – ZVP2110 -0.8 100 D G -0.6 ABSOLUTE MAXIMUM RATINGS.

Contextual Info: ZVN2110B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)30 I(D) Max. (A)850m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M ARCH 94_ FEATURES * 100 Volt v DS * RDS on = REFER TO ZVN2110A FOR GRAPHS PARAMETER SYM BO L Drain-Source Voltage VDS 100 V Continuous Drain Current a tT amt5=25°C •d 320 mA Pulsed Drain Current

2106a

Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
Contextual Info: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108

ZVN2110A

Abstract: ZVN2110C
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2110C ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on = 4Ω G D S E-Line TO92 Compatible REFER TO ZVN2110A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE 100 UNIT V

Contextual Info: Not Recommended for New Design Please Use ZVN2110A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN2110C ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on = 4Ω G D S E-Line TO92 Compatible REFER TO ZVN2110A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: SELECTION TABLES TABLE 6: SM A LL SIGNAL M O SFETS IN E-LINE Centre Drain Configuration B V Dss V GS(thl V PD f*DSIonl at I0 Max. mA Q at Max. to V gs V V mA > to i Part number 200 100 180 320 2 1 3 1 10 250 10 0.7 ZVN2110C 6 0.8 2.4 1 4 60 600 8 1.3 3 1

Contextual Info: SOT223 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN2110G ISSUE 3 – OCTOBER 1995 ✪ FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED D S PARTMARKING DETAIL COMPLEMENTARY TYPE - D ZVN2110 ZVP2110G G ABSOLUTE M AXIM UM RATINGS. PA RA M ETER

Contextual Info: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN2110A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on = 4Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS 100 V Contin uo us Drain Cur r en t at T am b=25°C

Contextual Info: ZVN2110G Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2 Minimum Operating Temp (øC)-55

Contextual Info: ZVN2110AM1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)320m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)

1rfz44

Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)

FXT2222A

Abstract: FXT2907A FXT3904 FXT3906 ZVN2110C ZVN2120C ZVN4206C ZVNL120C ZVP2110C ZVP2120C
Contextual Info: CENTRE COLLECTOR E-LINE TABLE 6: SW ITCH IN G T R A N SIST O R S Type V ceo Max • V CE sat at Max. •c Min at h FE at Iß •c h Max. switching times !c to n ^o ff ns mA V mA V mA mA Min. Max. mA MHz mA ns F XT2222A 40 800 1.0 500 50 100 300 150 300 20

electrical engineering projects

Abstract: RELAY JZC UA78L05ACLPR resistor 10k ohm JZC-11F-5VDC-1Z SC1602Z
Contextual Info: Page 1 of 2 Digilentinc.com Blog Learn Search chipKIT Starter Kit Part # 240-064-KIT Hide Details The chipKIT Starter Kit provides a wide range of sensors, actuators, and electronic components at a remarkably low cost, enabling the construction of an endless array of projects that can serve to inform beginners or empower experts. The kit has

Contextual Info: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP