ZR TRANSISTOR Search Results

Contextual Info: Bulletin No. ZR-A Drawing No. LP0747 Released 08/11 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODEL ZR - C-FACE ENCODER WITH NPN OPEN COLLECTOR OUTPUT  THRU-SHAFT DESIGN FOR EASY MOUNTING  EXCELLENT CHOICE FOR VECTOR MOTOR DRIVE CONTROL

YTAF640

Abstract: YTAf
Contextual Info: TO SHIBA YTAF640 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV YTAF640 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • • 10 ± 0.3

YTA830

Abstract: BTM marking SPF12
Contextual Info: TO SHIBA YTA830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV YTA8 30 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm

YTAF620

Abstract: YTAf6
Contextual Info: TO SHIBA YTAF620 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV YTAF620 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • • 10 ± 0.3

YTA630

Abstract: transistor yta630
Contextual Info: TO SHIBA YTA630 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV YT Afiifl INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • •

TRANSISTOR KJ

Contextual Info: 2SK2914 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR 7 Ç t f SILICON N CHANNEL MOS TYPE zr-MOSV ? Q 1 f l INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance

YTAF630

Abstract: 0304 n channel YTAf diode marking 1AA
Contextual Info: TO SHIBA YTAF630 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV Y T Ä F f i i f l INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 +0.3

Contextual Info: TO SHIBA 2SK2992 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV 2 S K2 9 9 2 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance

2n5872

Contextual Info: •4ö E Ö1331Ö7 » 0D0GM41 SEMELABE ISNLB M^b SEMELAB L T T>r-zr-ei BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N5741 2N5742 2N5743 2N5744 2N5745 2N5781 2N5782 2N5783 2N5784 2N5785 2N5786 2N5793 2N5794 2N5804 2N5805 2M5838 2N5839 2N5840

transistor bc 930

Abstract: transistor bc 248 transistor BC 247 cf930 BC 247 sot-23 D200-PA E33681 HAT2195WP BC 247 b transistor SOT-23 marking BF
Contextual Info: TELEFUNKEN ELECTRONIC filC D • CF 930 Marked with: CF 5 YHILilPQJMIKiM electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: QDDSBfifiO r- 3 / -zr Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;

Contextual Info: w en zr ISJ ÇD ro a ULTRASENSITIVE BIPOLAR HALL-EFFECT SWITCHES These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over

Contextual Info: TOSHIBA {DISCRETE/OPTO} T í 9097250 TOS HI B A DISCRETE/OPTO SEMICONDUCTOR DE|lDT7a5D 99D 16723 D0lti7E3 DT-S^HS TOSHIBA FIELD EFFECT TRANSISTOR 2 S I 5 7 3 SILICON N CHANNEL MOS TYPE T E N T A T IV E TECHNICAL DATA (zr-Mos > INDUSTRIAL APPLICATIONS Unit in mm

IS320

Abstract: YTAf
Contextual Info: TOSHIBA YTAF840 TOSHIBA FIELD EFFECT TRANSISTOR Y T A SILICON N CHANNEL MOS TYPE zr-MOSV F R i i l INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS 10 ± 0.3 • • • • Low Drain-Sorce ON Resistance : Rd S (ON) —0.750 (Typ.)

YTA640

Contextual Info: TOSHIBA YTA640 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE zr-MOSV YTA640 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

Contextual Info: TOSHIBA {DISCR ETE /OPTO} 9097250 TOSHIBA ¿/aììùUii T i D e I td^SSD 001^723 7 DISCRETE/OPTO TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S I 5 7 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (zr-Mos > TENTATIVE INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

bux84a

Contextual Info: BUX84, BUX84A BUX84, 84A NPN PLASTIC POWER TRANSISTORS High Voltage, High Speed Power Switching Applications of oi l zr ° - J JJ g U ¿1. M DIM A B C D E F G H J K L M N MIN MAX 16,51 10.67 4.B3 0.90 1,15 1,40 3,75 3,88 2,29 2.79 2t54 3,43 0,56 12,70 14,73

IN939

Contextual Info: SEMITRON INDUSTRIES LTD 43E D B 013700^ 0000171 b BISLCB IN935-940B s e r i e s Zener Reference Diode 9V0 Volt Temperature Compensated APPLICATIONS • The ZR range are designed for operation at a specified current from 2 - 1 5 mA. It is recommended that Iz is held

54562P

Abstract: 24v 8 channel Relay driver
Contextual Info: M I T S U B I S H I B IP O L A R D IG ' ’ A L ¡Cs M 54562P 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAM P DIODE DESCRIPTION ’’"he M54562P, 8-channel source driver, is designed for use PIN CONFIGURATION TOP VIEW T zr with M O S logic systems.

2SA1220

Abstract: 2SC2690 2SA1220A 25A1220 ci 7 flu 0286 2SA1220 NEC 2SA122 2SC2690A PWS350 VCR10
Contextual Info: Silicon Pow er Transistors 2SA1220,1220A/2SC2690.2690A \&m a & m t i m itsts * zr m m at m jj m 4@m & o - jm ii ^;5o ~ ioo w m ^ ”7 - r > -/¿o o T V f h f t . ' I W j i i J: t / O pTJ É't Îfc T 'i£ U , ¿ i t & ;i t ftm m 1 4 M Ï : mm) L î t „

Transistor NP 3773

Abstract: TC-6233 jb 5531 F530 T108 L32* MARKING DU 9 marking js 2b K/AK-34
Contextual Info: zr— S • V — H Compound Transistor GAI F4M n m o s < i T X ÎS ÎÆ è lA] / l L T ^ £ ~ t„ R i =22 kû , R 2= 22 ki2 o GN1F4M > 3 > 7" )Ì / > 9 ]) Ti'-Sim X " ë â ~ t, ( T a = 25 "C ) m h «s- al fô -¥ jL a l , 7 9 - -ì-xFh*]' )± ^CBO 60

TC-7986A

Abstract: 2SK2112 CMS01 7986A diode lt 0236
Contextual Info: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,

2SB1318

Abstract: BH rn transistor 3Fp transistor
Contextual Info: zr— S • — K NEC ^ Silicon P o w e r Transistor 2SB1318 PNPI ’J=l> m « W t : mm 7.0 MAX. 1-2 o y — *J > h y ^ f â iC O t z & y , o S i t § Ë Â S^C I , (T a L Ä * M S V c E (s a t ) ~ c ~ t o = 25 °C ) B& g -§§- ¥ /E fï a V 9 9 • '•'i — X fai 16 Eh

2SK2484

Abstract: MP-25 TTLDM
Contextual Info: zr — i/— h IM E C ^ r mos MOS Field Effect Transistor 2SK2484 N ^-V X -r - MOS FET yf-X fR l n im m 2 S K 2 4 8 4 ttN 3 1-l’ *J M fö M 7 - MOS FETT', 7 51 > T& U, < -y ^ ilT '-T o « f O w y — ± 3 0 V ^ Ü E T -T o S itŒ O f ë À ^ m T 't o C is s = 1 2 0 0 p F

6209A

Abstract: TC-6209A 2SA1611 04 NG 537
Contextual Info: zr— ^ — h N E C jr vU = i> 2SA1611 P N P X fcf£ * V # V=l> M m m m sm mm « "J o S / J\ f é W f ê T * U , /N'T 7 U KlCffl t 2.1 L T ft T - - T o < ¥ ii : mm ± 0.1 1.25 ±0.1 02SC4177 t 3 > y i j * > $ V ! : ' f è ï ï ? È £ T o o v m u s m ifX È