ZO50 Search Results

Contextual Info: CÄTÄLQO_ Æ\\tTOTÎ nF„ rFS.,«. PRODUCT N-CHANNEL ENHANCEMENT MOS FET 600V, 15A, 0.50n SDF15N60 GAF FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • L O W IR LOSSES

upc1008c

Abstract: UPC1008 pc1008c ipc-l 1S953 PA49
Contextual Info: Analog IC /¿PC 1008 C fi P C 1 8 C 4 i§ i^ iS ? ^ ;^ lH ]5 S // P h a s e -F re q u e n c y D e tc to r S 5?/D iescripticn /iPClOOSC 2 'OVti.tèti&lïït ? + - > / • # > 7 i PLL r <? Ti*L r 7 r <r • o -,« x 7 s - ÿ , 7 7 r < 7 • a - ,< x • ( i M i f t S s u i , A ^ C T t S f 1 s <i « 5 : 7 , <

Contextual Info: FR0OUOT ÂTÂIO' N-CHANNEL ENHANCEMENT MOS FET 600V, 20A, 0.35G SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

ph-200 diode

Abstract: 5082-3040 HP an-922 5082-3040 equivalent 5082-3041 LM 3041
Contextual Info: H E W L E T T - P A C K A R D / CflPNTS blE D • 4 4 4 7 5 Ö 4 G D G cì7E3 ^ bl ■ H P A W hp% m U r im H E W LE T T P a c k a rd Stripline PIN Diode Switches/ Attenuators 5082-3040 5082-3041 5082-3340 Features 2 16 0 085 f f ï (0 075) • Low Cost to Use

1D11A

Abstract: SDF11N100
Contextual Info: PRODUCT Æ iitron CÂTÂIO ' N-CHANNEL ENHANCEMENT MOS FET 1000V, 11A , 1.15 n SDF11N100 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

DIODE A34

Abstract: 5N60 SDF15N60
Contextual Info: PRODUCT CATALO' N-CHANNEL ENHANCEMENT MOS FET 600V, 15A, 0.50Q SDF15N60 FEATURES • • • • • • • • GAF RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE OPTIONAL MIL-S-19500

Contextual Info: • M302271 00537S1 HGT ■ HAS HARRIS 2 N 6 7 8 4 N -Channel Enhancem ent-M ode Power M OS Field-Effect Transistor August 1991 Package Features TO-2Û5AF BOTTOM VIEW • 2.25A, 200V * rDS on = 1-5 n • S O A is Power-Dlssipation Limited SO URCE • Nanosecond Switching Speeds

10256K

Abstract: AMAA
Contextual Info: 32K x 36 Synchronous SRAM +3.3 V Supply With Clocked, Registered Inputs and Burst Counter FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 9,10,12, and 17 ns The Shaip Synchronous SRAM family employs high­ speed, kjw-power CMOS designs using a thin-fllm tran­

A4G1-1500-02

Abstract: 0402-0008-55 A4G1
Contextual Info: bei S ty le S IP S IP S iP SIP S iP S IP SIP SIP SIP SIP SIP SIP SIP S IP SIP S IP S IP S IP S iP SIP SIP S iP S IP S IP S tP S IP S iD S IP S IP StP SP SIP SIP S IP S IP S IP S IP S IP S IP S IP S IP S IP S iP S iP SiP S IP S IP S IP S iP SIP S IP S IP S IP

SA630N

Abstract: 5.8 ghz transmitter 8pin SA630D
Contextual Info: Product Specification Philips Sem iconductors Single pole double throw SPDT switch NE/SA630 PIN CONFIGURATION DESCRIPTION FEATURES The NE630 is a wideband RF switch fabricated in BiCMOS technology and incorporating on-chip CMOS/TTL compatible drivers. Its primary function is to switch

199S

Abstract: 673D SN55LBC173 SN55LBC174
Contextual Info: SN55LBC174 QUADRUPLE LOW-POWER DIFFERENTIAL LINE DRIVER SGLS082 - MARCH 1995 • Meets EIA Standard RS-485 • Designed for High-Speed Multipoint Transmission on Long Bus Lines in Noisy Environments Supports Data Rates up to and Exceeding Ten Million Transfers Per Second

zo103

Abstract: transistors zo103 transistor zo103 xo103 zo103 ma upilex zO51 ZO52 ZO53 ZO1-ZO103
Contextual Info: LH168P 309-output TFT-LCD Source Driver IC LH168P DESCRIPTION PIN CONNECTIONS The LH168P is a 309-output TFT-LCD source driver IC which can simultaneously display 262 144 colors in 64 gray scales. TOP VIEW 350-PIN TCP XO1 1 YO1 2 ZO1 3 FEATURES CHIP SURFACE

ALQQ

Abstract: mosfet M05
Contextual Info: Æutran JM 8^4 3 H ,_ product 'i?T L X ^ S 1-3 4 3 5 ^ » FAX : F 4 0 7 * 8 6 3 - S94G N-CHANNEL ENHANCEMENT M05 FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo It.(1) VDSS Dra in-Gate Vo 1tage VDGR (Rg s -1-OMo ) (1) Gate-Source Voltage

Contextual Info: PRODUCT P-CHANNEL ENHANCEMENT MOS FET 100V.-12A, 0.3Q SDF9130 SDF9130 JAA JAB FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE

fet 600V 20A

Abstract: mosfet 600V 20A SDF20N60 1d20a
Contextual Info: PRODUCT Æutron CÂTÂL ' N-CHANNEL ENHANCEMENT MOS FET 600V, 20A , 0.35H SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

Contextual Info: MARKTECH 1 ÔE INTERNATIONAL ]> • PHOTOCOUPLER 6N138, 6N139 STTTbSS ÜOQGSE4 3 " P m -a 5 GaAIAs INFRARED+ PHOTO-IC The 6N138 and 6N139 consist of a GaAIAs infrared emitting diode coupled with a split-Darlington output configuration. A high.speed GaAIAs infrared manufactured with a unique

Contextual Info: PRODUCT CATTALO' Æ u tro n N-CHANNEL ENHANCEMENT MOS FET 600V, 20A, 0.35 0 SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

Contextual Info: PRODUCT CÂTÀLQQ_ J a W t x a n , N-CHANNEL ENHANCEMENT MOS FET 900V, 13A, 0.85Q SDF13N90 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES

TDA 5555

Abstract: B 647 S647
Contextual Info: WOñ HEWLETT mifíA PACKARD Low Cost Gigabit Rate Transmit/Receive Chip Set w ith TTL I/Os Technical Data HDMP-1022 Transmitter HDMP-1024 Receiver Features • Virtual Ribbon Cable Replacement • On-Chip Encode / Decode • On-Chip State Machine for Fully Automatic Link

300f diode

Abstract: mosfet DPAK U3055L SSR3055L
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET SSR3055L/U3055L FEATURES D-PAK • L o w e r R d s ON • • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: &TDK. Klectrical Characteristics Use Frequency Center Isolation Insertion V. S. W. R. Handling Capacity Weight range freouency Zo-50 Q loss power o f b u ilt-in MHz <MHz) (dB) (dR) re s is te r (») (8) rain max. max. max. 00 PCS 1930^1990 1960 18 0.4 1.3

Contextual Info: PRODUCT Æ utTon CÁTALO' N-CHANNEL ENHANCEMENT MOS FET 50 0V, 24A, 0.25Q SDF24N50 GAF FEATURES • • • • • • • • SCHEMATIC GH D ra in -s ou rc e Vo 1t . 1 D r ai n- Ga te Voltage G GATE DRAIN 3 SO U R C E STANDARD BEND CONFIGURATIONS (1) Ga te - So ur ce Voltage

Contextual Info: DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 900V, 13A, 0 . 85 Q SDF13N90 FEATURES • • • • • • • • GAF RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE OPTIONAL MIL-S-19500