300LI Search Results
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Leviton Manufacturing Co 8300-LIIV REC DUP HG PIGTAIL 2PO 3WI 20A125V |
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8300-LI | Bulk | 10 Weeks | 1 |
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Siemens SLD6B300LIBRKR BSC SLD 3P 300A 600V 25KA LI TU ; SLD6B300LI |
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SLD6B300LI | Bulk | 2 Weeks | 1 |
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Siemens SHLD6B300LIBRKR BSC SLD 3P 300A 600V 35KA LI TU ; SHLD6B300LI |
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SHLD6B300LI | Bulk | 2 Weeks | 1 |
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Siemens SCLD6B300LIBRKR BSC SLD 3P 300A 600V 100KA LI ; SCLD6B300LI |
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SCLD6B300LI | Bulk | 2 Weeks | 1 |
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Siemens SCLD6A300LIBRKR ADV SLD 3P 300A 600V 100KA LI ; SCLD6A300LI |
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SCLD6A300LI | Bulk | 2 Weeks | 1 |
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300LI Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: HARM S X CA3141 Semiconductor ,V « ° ° $ January 1999 > OÏ * La ' \ ' .covt' ce*v iigh-Voltage Diode Array For Commercial, Industrial and Military Applications Features Description • Matched Monolithic Construction The CA3141E High Voltage Diode Array Consists of ten gen |
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ca3141ca3141e | |
upc1008c
Abstract: UPC1008 pc1008c ipc-l 1S953 PA49
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upc1008cpc1008c300ii300ft+6 | |
2N2193
Abstract: Q32J
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2n2193800mw100ua100ha+4 | |
4433-INTERPOINT-BLVD
Abstract: Pioneer sk 400 SK9210 semi catalog 4801N
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d-81373-munenchen4/1621-point-n223-collonade-road-suite-100+10 | |
HTC Korea
Abstract: 4count sharp CMOS Camera Module processor 8count CCIR656 MB86S02 YUV422 defective pixel correction test 192pix defective pixel
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mb86s02htc korea4countsharp cmos camera module processor+6 | |
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Contextual Info: HIP0061 S e m iconductor 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transis |
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hip0061100mj5m-1982 | |
YCbCr422
Abstract: 32pix YUV422 8BIT 15FP
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mb86s02ycbcr42232pixyuv422 8bit+1 | |
fairchild ccd
Abstract: Contact image sensor fairchild 2048 x 1 ccd linear array CCD181 linear ccd radiation fairchild linear image sensor
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ccd181ccd181dcfairchild ccdcontact image sensor fairchild+3 | |
linear ccd radiation
Abstract: linear ccd radiation fairchild CCD linear array CCD181 CCD191 CCD181DC Fairchild Imaging fairchild ccd
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ccd181dclinear ccd radiationlinear ccd radiation fairchildccd linear array+4 | |
CCD181EDCContextual Info: Variable-Element High-Speed Linear Image Sensor FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2592 x 1 photosite array 10/jm x 10/jm photosites on lO^m pitch Anti-blooming and integration control Voltage-selectable array lengths: 2592 elements 2048 elements |
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10/jmv2048ccd181edc | |
GE CR2940
Abstract: CR2940 cr2820b CR2943 CR324 CR2940U202 CR2940U203 ge cr2943 CR7006 GE CR224
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200-linecr2943/2940go-11gqcx000143+13 | |
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Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - OCTOBER 1995 BC868 | m O_ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC869 |
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bc868bc869bc868-16bc868-25+1 | |
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Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS84 ISSUE 2 -SEPTEMBER 1995 O PARTMARKING DETAIL— SP ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT -50 V mA mA Continuous Drain Current •d -130 Pulsed Drain Current |
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bss84tamtp25-100ma100ma+1 | |
KEYPAD
Abstract: keypad datasheet KEYPAD Storm 16-key 3K16T1
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3k04213k12t13k12013k16t1+7 | |
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GE CR2940
Abstract: CR2940 CR2820B CR2940U202 CR2940U203 CR2810 GE CR224 Cr2943 CR2810A14 CR2940U210
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200-linecr2943/2940go-11gqcx000153+13 | |
viking resistor
Abstract: 472/103 operational amplifier discrete schematic qsop-16 pcb R2503
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viking resistor472/103operational amplifier discrete schematicqsop-16 pcb+1 | |
2SC2522
Abstract: 15D transistor 2SC2522A R2213 2C2523 2sa1073 2SC25 10ICI
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r-22-132sc25222c2522a2c2523+11 | |
transistor f445
Abstract: SGSF445 f445 smps isolated ic 5 pins smps 5v 0.3A mosfet to3 7z mosfet F545 IF345 tf 115 250v 2a
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sgsif345/f445sgsif445/f54550khzt-33-13+11 | |