ZG J1 Search Results

mark ZG

Abstract: KTN2222AU
Contextual Info: SEMICONDUCTOR KTN2222AU MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZG 1 2 Item Marking Description Device Mark ZG KTN2222AU hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

ZG SOT-23

Abstract: ZG SOT23 KTN2222AS SOT-23 MARKING ZG SOT-23 KTN2222AS marking zg MARKING ZG sot 23 zG j1 zg marking sot 23 zG
Contextual Info: SEMICONDUCTOR KTN2222AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 ZG 2 1 Item Marking Description Device Mark ZG KTN2222AS hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

ZG-1449-18

Contextual Info: ZG-1449-18 The JMK ZG-1449-18 audio amplifier is a dual channel audio amplifier capable of functioning in an automotive environment. Each channel of the amplifier is capable of both simultaneous and independent operation. The amplifier uses vehicle 12 volt power and contains all the

J1455

Abstract: 5 volts audio amplifier vibration speaker
Contextual Info: ZG-1449-18 The JMK ZG-1449-18 audio amplifier is a dual channel audio amplifier capable of functioning in an automotive environment. Each channel of the amplifier is capable of both simultaneous and independent operation. The amplifier uses vehicle 12 volt power and contains all the

KZQ 55 - 12

Abstract: OZEN 915 lek 100K0 402-3K HOK-4 Pb NK 90Z 1fbg N/KZQ+55-12
Contextual Info: Ahgmkhe hnminm O^eZr PPO Ankk^gm + P^kbhnl bgcnkr fZr k^lnem b_ bglmkn\mbhgl Zk^ ghm _heehp^]. Nkh]n\m fZr [^ ]ZfZ`^], hk bgcnkr fZr k^lnem b_ bglmkn\mbhgl Zk^ ghm _heehp^]. {Qa^ _heehpbg` bl Zg ^qieZgZmbhg h_ ma^ lrf[hel nl^] bg ma^ hi^kZmbhg fZgnZe. + \Znmbhg:Ggcnkr hk ]Zg`^k fZr h\\nk ng]^k li^\bZe \hg]bmbhgl.

photodiode array 1550 nm

Abstract: Photodiode Array 32 element
Contextual Info: ^^ E G zG JU D SO N Parallel Output Germanium Arrays 0.8 to 1.8 jam Description Applications Standard packaging and element configurations result in low cost and quick delivery for J16P Series highquality Germanium photodiode arrays. The 16-element and 32-element linear

quadrant detector hgcdte

Abstract: J15QUAD quadrant photodiode j10quad j16quad quadrant photodiode preamplifier
Contextual Info: J ^ E G zG JUDSON q Figure 29-1 Position S ensor D etector C onfiguration J16PS, J12PS, J10PS Position Sensors A Ge, InAs, or InSb position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y

Ge APD

Abstract: J16A-18A-R100U J16A avalanche photodiodes
Contextual Info: J}ò E G zG J U D S O N _ Ge Avalanche Photodiodes APDs 0.8 to 1.5 um Description Multiplication Characteristics T he J16A series G erm anium A va­ lan ch e P hotodiodes are designed for h ig h ­ speed applications a t 800 an d 1300 nm.

J16-18A-R01M-HS

Abstract: J16-8SP-R05M-HS J16-18A-R01M germanium photodiode
Contextual Info: J ^ E G zG JU D SO N Germanium Detector Operating Notes 0.8 to 1.8 jim 'f§jjpilljf!' Biii 'viflnJP General Responsivity Operating Circuit J16 Series detectors are high-quality G erm anium photodiodes designed for the 800 to 1800 nm w avelength range. The equivalent circuit for a G erm a­

photodiode ge

Abstract: INSB PHOTODIODE HgCdTe J16QUAD-8D6-R02M J16PS 4 quadrant InSb quadrant detector InSb metal detector sensor j10quad
Contextual Info: E G zG J U D S O N * * — — «ï fflb . *V ÌV '#3é ¿.fi, ir Figure 29-2 Example of Position Linearity Figure 29-1 Position Sensor Detector Configuration - J16PS, J12PS, J10PS — '3 Î fc* i l '»ti'*.«'* Po sitio n S en sors A Ge, InAs, or InSb position sensor

M2340

Abstract: M23400
Contextual Info: MITSUBISHI LS Is M5M23400A-XXXP,FP,VP,RV J1 4194304-BIT 262144-WORD BY 16-BIT CMOS MASK-PROGRAMMABLE ROM /4194304-BIT (524288- WORD BY 8-BIT) CMOS MASK-PROGRAMMABLE ROM DESCRIPTION The M o M23400A -XXXPC, FP, VP or RV)is a 4194304-bit mask-programmable high speed read-only memory.

Contextual Info: • bSLHflET 0017234 «ÎSfl ■ MITSUBISHI RF POWER MODULE M57776 889-915MHz, 8V, 300mW, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM —@ 1— @ Dim ensions in mm < w i-j> ii-[i © © © © © i i 77777)7777777777777 PIN : ©Pin : RF INPUT V c c i : 1st. DC SUPPLY

RD70HVF1

Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers

RD70HVF1

Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically

RD15HVF1-101

Abstract: RD15HVF1 D 1413 transistor D1560 tc 1601 a rd15hvf transistor marking zg TRANSISTOR 2229 transistor D 1557 6015d
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2±0.4 3.6±0.2 9±0.4 1.2±0.4 2.5 2.5 For output stage of high power amplifiers in VHF/UHF

RD15HVF1

Abstract: rd15hvf RD15HV 175mhz gp 845 100OHM mitsubishi rf RD15HVF1 UHF POWER mosfet 3w
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W DESCRIPTION OUTLINE RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica

RD02MVS1

Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15

RD02MUS2

Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
Contextual Info: MITSUBISHI RF POWER MOS FET RD02MUS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15

RD02MUS1

Abstract: T112 transistor marking zg RD02MVS1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

RD07MUS2B

Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

RD02MUS1

Abstract: transistor rf m 1104 mosfet 840 datasheet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD07MUS2B

Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor

RD70HVF

Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers