INSB Search Results

if6 hall

Abstract: Brushless if6 Hall IC Switch IF5 if5 hall hall element NHE520 NHE524 550 hall "Brushless if6 if6 sensor
Contextual Info: InSb Hall Element Product Information Model: Description: NHE524 Hall Element NHE520 1. Applications * Brushless DC motors CD-ROM drive, floppy disk drive, other small precision motors etc. , Noncontacting sensors (limit switch, flux leakage detection, rotation speed detection and position

if6 hall

Abstract: if5 hall Brushless if6 hall NHE520 NHE529 HALL ELEMENT NHE-520 if6 sensor hall magnetic
Contextual Info: InSb Hall Element Product Information Model: Description: NHE529 Hall Element NHE520 1. Applications * Brushless DC motors CD-ROM drive, floppy disk drive, other small precision motors etc. , Noncontacting sensors (limit switch, flux leakage detection, rotation speed detection and position

Contextual Info: DRV411 www.ti.com SBOS693A – AUGUST 2013 – REVISED AUGUST 2013 Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors Check for Samples: DRV411 FEATURES DESCRIPTION • The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor

Contextual Info: DRV411 www.ti.com SBOS693B – AUGUST 2013 – REVISED DECEMBER 2013 Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors Check for Samples: DRV411 FEATURES DESCRIPTION • The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor

Contextual Info: INFRARED DETECTOR InSb photovoltaic detector P5968/P4247 series High-speed response, low-noise photovoltaic detector P5968/P4247 series are photovoltaic detectors having high sensitivity in the so-called atmospheric window at 3 to 5 µm. Custom devices are also

Contextual Info: InSb photoconductive detectors P6606 series Thermoelectrically cooled detectors capable of long-term measurements Features Applications Thermoelectric cooling ensures high speed and high sensitivity up to 6.5 m. Environment measurements gas analysis, etc.

Contextual Info: Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02

InSb spectral response

Contextual Info: InSb photovoltaic detectors P5968/P4247 series High-speed response, low-noise photovoltaic detectors The P5968/P4247 series are photovoltaic detectors having high sensitivity in the so-called atmospheric window at 3 to 5 m. Custom devices are also available to meet your special request.

Contextual Info: INFRARED DETECTOR InSb photoconductive detector P6606 series Thermoelectrically cooled detectors capable of long-term measurements Features Applications l Thermoelectric cooling ensures high speed and high l Environment measurements gas analysis, etc. sensitivity up to 6.5 µm.

Contextual Info: Weitergabe sowie Vervielfaeltigung dieser Unterlage, Verwertung und Mitteilung ihres Inhalts nichtgestattet, soweifnicht ausdruecRlich zugestanaen. Zuwiderhandlungen verpflichten zu Schadenersatz. Alle Rechte vorbehalten, insbesondere fuer denTall der Patenterteilung Oder GM-Eintragung.

HgCdTe

Abstract: infrared detector InSb spectral response L5736 L5914 IR Detectors L5930 photoconductive InSb Infrared Preamplifiers HGCDTE detector
Contextual Info: L 5 9 0 0 SERIES INFR ARED DETECT ORS INFRARED DETECTORS The L5900 Series of Infrared Detectors are part of a complete line of tunable diode laser sources and accessories offered by Laser Analytics. The L5900 Series includes InSb and HgCdTe detectors. Standard detectors allow response between 1 and 20 microns. Custom detectors are also available

EN 60127-2

Contextual Info: FUSES / SICHERUNGEN SURGE TOLERANT Miniature fuse-links Type SSU 5 x 20 G-Sicherungseinsätze Typ SSU 5 x 20 especially for telecom applications insbesondere für Telecom-Anwendungen 5 x 20 mm ts 1000 100 10 75 1 100 Pre-arcing time in seconds ts Schmelzzeit in Sekunden ts

KS113

Abstract: THS126 HG106C ksy13 LT140A THS124, Toshiba THS117 HW-105 THS119 SOT143
Contextual Info: Cross Reference Linear Analog Hall Elements Vendor Infineon Asahi Sharp Toshiba Part No Type Size mm Nominal supply (mA) Hall voltage @0.1T (mV) 2,9 1,4 1,1 5 120 Package KSY 13 GaAs KSY 13-2 KS113 HW101A InSb HW105C HZ302H InAs HZ106/302C SOT143 SOT143*

magnetoresistor

Contextual Info: SÌE D • flaBSbOS DOlbS'te 1 MSIEfi M agnetoresistor FP 30 D 250 E - SIEMENS AKTIEN6ESELLSCHAF Features 0 ,5 î0 .i -Active area • InSb/NiSb semiconductor CuL 0 0 .0 8 • Flux concentrating iron substrate m • High sensitivity r m

Contextual Info: InSb Semiconductor Magnetoresistive Element MS-0040 MS-0040 is a SON package semiconductor magnetoresisitive element. It can detect gear rotation with high accuracy combined with a bias magnet for use,and outputs the phases A and B of module m=0.4. Shipped in tray 225 pcs per pack

EW-460

Contextual Info: Hybrid Hall Effect ICs EW-series EW-460 Shipped in packet-tape reel 5000pcs/Reel EW-460 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Unipolar Hall Supply Voltage Effect Switch 4.5~18Ｖ Hall Element

InSb spectral response

Abstract: P5172 detector inas
Contextual Info: In As, InSb Photovoltaic Detectors Photovoltaic Detectors with High-speed Response and Low Noise InAs detectors cover a wavelength range equivalent to that o f PbS cells, and InSb detectors cover a range equivalent to PbSe cells. How­ ever, InAs and InSb detectors have higher response speed and lower

SV110

Abstract: Q64021 TESLA 110 S110S hall TESLA 3D Hall device
Contextual Info: SV110 Hall signal probe w ith vapour-deposited layer S V 1 1 0 is a high sensitivity, high internal resistance Hall device for application in control and regulating circuits semiconductor material InSb — vapour-deposited layer . Terminals: Hall voltage red; control current green; wire length 100 mm.

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

Contextual Info: Weilergabe sowie Vervielffiltigung dieses Dokuments. Verwertung und Mitteilung seines Inhalts gem §18 UWG verboten. soweit nicht ausdrucklich gestattet. Zuwiderhandlungen verpflichten zu Schadenersatz §19 UWG . Alle Rechte vorbehalten. insbesondere das Recht. Patent-. Gebrauchsmuster- Oder Geschmacksmusteranmeldungen durchzufuhren.

Contextual Info: DRV411 www.ti.com SBOS693 – AUGUST 2013 Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors Check for Samples: DRV411 FEATURES DESCRIPTION • The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor

EW-560

Contextual Info: Hybrid Hall Effect ICs EW-series EW-560 Shipped in bulk 500pcs/Bag EW-560 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Unipolar Hall Supply Voltage Effect Switch 4.5~18Ｖ Hall Element Continuous

EW-432

Abstract: Latch UFN 432 S 261 Hall UFN 432 we i
Contextual Info: Hybrid Hall Effect ICs EW-series EW-432 Shipped in packet-tape reel 5000pcs/Reel EW-432 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Bipolar Hall Supply Voltage Effect Latch 2.2~18Ｖ Hall Element

410B

Abstract: EW410B
Contextual Info: Hybrid Hall Effect ICs EW-series EW-410B Shipped in packet-tape reel 5000pcs/Reel EW-410B is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Bipolar Hall Supply Voltage Effect Latch 3~26.4Ｖ Hall Element