3030FC Search Results

VTL13D7-20

Abstract: VTL-1307 VTL13D7 VTL1306-20 VTL13D1 VTL13D1-20 VTL13D3 VTL13D3-20 VTL13D5-20 pj 81 diode
Contextual Info: Transmissive Optoswitch VTL13D1 - 07 Slotted Sw itch — .395 High PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches com bines an infrared emitting diode IRED with an N PN phototransistor in a one piece, sealed, IR transmitting plastic case.

PE-0-51

Abstract: pe182 PE-1-81 pbse PE-1-72 J14TE3 lead selenide TO-37 Scans-002681 J14TE1
Contextual Info: J '^ .E C r G JU D S O N Description Lead Selenide Detectors 2.0 to 6.0 jam • J14TO Series The J 14 Series detectors are Lead Selenide PbSe photoconductive (PC) detectors designed for operation in the 2-6 |xm wavelength region. The wave­ length of peak response depends on the

tic 1060

Abstract: rca 923 C30895 5252 F led rca 514 5252 F 5252 S RCA 411
Contextual Info: E G & G/CANADA/OPTOELEK BDBDbl D O O O O i n ID <123 H C A N A T-W-Si Photodiode R G i l Optics C30895 D A TA S H E ET Silicon Avalanche Photodiode Optim ized fo r High Responsivity and V e ry Lo w Noise at 1060 Nanom eters • Noise Equivalent Power NEP a t 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.

Contextual Info: VTD206K Alternate Source/ Second Source Photodiodes SFH206K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch(mm) CASE 61 PRODUCT DESCRIPTION TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) Large area planarsilicon photodiode in a waterclear, cast epoxy sidelooker,

VTL5C1

Abstract: VTL5C3 5c4/2 vtl5 VTL5C4
Contextual Info: V T L 5 C 3/2 , 5 C 4 /2 Dual Element LED Axial Vactrols PACKAGE DIMENSIONS inch mm .5 0 ( 1 2 . 7 ) . 3 2 0 ( 8 .1 3 ) - S ' ~l" X ^ -N O M ( 5 .0 8 ) - .3 7 0 ( 9 . 4 0 ) (0 .5 1 ) UL Listad File # 7 3 8 8 7 PLASTIC POTTING CONTOUR NOT CONTROLLED PHOTOCELL (L D R Ï

SG2007A

Abstract: SG2004A 3G30b 904nm SG2006A M9002 SG2002A SG2007 SG2010A SG2012A
Contextual Info: E G & G/CANADA/OPTOELEK IO D • Æ M Electro ■ m m V ^ IO D t ic s 3 G 3 0 b l 0 0 0 0 0 0 7 0 2 TT ■iCAJ^IA-p.‘/ SG2000A Series GaAs Pulsed Lasers DATA SHEET 904 nm Gallium Arsenide Injection Lasers for Pulsed Operation Small Emitting Areas Variants With Reverse-Case Polarity are Available

1013B

Abstract: VTB1012B
Contextual Info: VTB Process Photodiodes V T B 1 0 1 2 B , 1013B PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 17 Small area planar silicon photodiode in a “flat" window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes

Contextual Info: SBL3020FCT – SBL3045FCT 30A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

HgCdTe

Abstract: J15TE4 J15TE3 preamp MC31G HGCDTE detector judson PA-090 EG&G PA-080 judson PA-100
Contextual Info: E G & G JUDSON 3T E J15TE Series T> m 3D30b0S 0000237 7 M JUD Long-Wave Mercury Cadmium Telluride Detectors 10.6 |Lim T-yj-v/ General • J15TE Series "Long-Wave" detectors are photoconductive HgCdTe elements on thermoelectric coolers for C 0 2 laser detection at 10.6|am.

VTR17D1

Abstract: opto-switch VTR17E1 optoswitch
Contextual Info: Reflective Optoswitch V TR 17D1, 17E1 Arrow Retro with Flying Leads PRODUCT DESCRIPTION This series of reflective optical switches com­ bines an infrared em itting diode IRED w ith an NPN phototransistor (VTR17D1) or photodar­ lington (VTR17E1) in a one piece, sealed, IR

laser rca

Abstract: 904nm
Contextual Info: E 6 & G/CANADA/OPTOELEK ID D • H B ÆM Electro ■ m v V ^ IO p t ic s 3G3DblO QQQG07G 2TT ■ CANA'p.tf 1 - 0 5 ^ SG2000A Series GaAs Pulsed Lasers DATA SHEET 904 nm Gallium Arsenide Injection Lasers for Pulsed Operation Small Emitting Areas Variants With Reverse-Case Polarity are Available

SB3060fct

Abstract: 1000C ITO220AB 30100FCT
Contextual Info: SB3020FCT thru SB30150FCT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 TO 150 VOLTS CURRENT - 30 AMPERES ITO-220AB FEATURES MECHANICAL DATA Plastic Package has Underwriters Laboratory Flammability Classification 94-0 utilizing Flame Retardant Epoxy Molding Compound

photodiode array 1550 nm

Abstract: Photodiode Array 32 element
Contextual Info: ^^ E G zG JU D SO N Parallel Output Germanium Arrays 0.8 to 1.8 jam Description Applications Standard packaging and element configurations result in low cost and quick delivery for J16P Series highquality Germanium photodiode arrays. The 16-element and 32-element linear

Contextual Info: SB3020FCT – SB30100FCT 30A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability