ZENERDIODEN Search Results

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

KZZ71

Abstract: KZZ74 KZZ72 KZZ76 KZ715 KZ707 KZZ73 KZZ75 KZ755 KZ753
Contextual Info: TESLA ELEKTRONICKE 3SE D • flTSDSMM DD0D13b Tflb ■ T ^ lf- ü l TELC SILIC O N ZEN ER DIO D ES 0.28 AND 0.4 W SILIZIUM -ZENERDIODEN 0,28 UND 0.4 W Maximum ratings • Grenzdaten lz Pd R th jc Uz r2 mA W K/W V KZ721 36 0,28 * 0,012 KZ722 30 0,28 1) 0,012

keramische Werke Hermsdorf

Abstract: Mischstufen VEB Keramische Werke OA741 OA645 OA625 hermsdorf OA665 neue halbleiterbauelemente Amateur
Contextual Info: HalbleiterBauelemente Dioden Germanium dioden Type Durchlaß­ spannung U a k IVI Durchlaß­ strom Sperr­ spannung lA K l m A l U k a |V| Sperrstrom IKA li'AI max. zuläss. Sperr­ spannung jEä max. zuass. Durchlaß­ strom UKAma* IVI ^AKmax !mAl Bau­

1N5224B

Contextual Info: DATA SHEET 1N5221B~1N5267B SILICON ZENER DIODES 2.4 to 75 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

BZX84C12

Contextual Info: BZX84C2V7.BZX84C75 Zener-Diodes Surface mount Zener Diodes Zener-Dioden für die Oberflächenmontage Version 2004-08-03 Power dissipation Verlustleistung 1.1 2.9 ±0.1 0.4 Nominal Zener voltage Nominale Zener-Spannung 1.3 ±0.1 2.5 max 3 Type Code 2 1 300 mW

bzx55c10

Abstract: BZX55C12 BZX55-C5V1 BZX55C5V1 BZX55-C18 bzx55c18 bzx55c13 bzx55c15 BZX55C24 BZX55C2V7
Contextual Info: BZX55C2V4~BZX55C100 AXIAL LEAD ZENER DIODES VOLTAGE 2.4 to 100 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Acqire quality system certificate : TS16949 • Manufactured in accordance with AECQ101

zener-diode

Abstract: bzx84b5v6 philips zenerdiode BZX84B5V6
Contextual Info: ERRATA SHEET Type: STM 100 Step Code: Dx Date: 12/08/2005 Zugehörige Produktdokumentation o User Manual STM 100, V1.3 und V1.4 Fehlerbeschreibung Es wird beobachtet, dass die Empfänger RCM ein Telegramm des STM 100 Moduls nicht erkennen, da das Bit-Timing aus der Spezifikation driftet siehe

DCA50e

Abstract: DCA50 germanium transistors NPN 6F22 MN1604 SK17 germanium transistoren
Contextual Info: DCA50e Komponenten-Analysator erweitert Hergestellt in Großbritannien. Peak Electronic Design Ltd. Atlas House, Kiln Lane, Harpur Ind. Est, Buxton, SK17 9JL, U.K. Einleitung Der DCA50e KomponentenAnalysator ist ein zukunftsweisendes Instrument, das eine Vielzahl von

Contextual Info: DATA SHEET 1N5221B~1N5267B SILICON ZENER DIODES 2.4 to 75 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Pb free product : Sn can meet RoHS environment substance

transistores

Abstract: te 1317 diodo zener
Contextual Info: S e m ic o n d u c t o r * CONTENTS | ENGLISH FRENCH Introduction. 1 Introduction. 1 Product Packages. 2 Gamme des

1N5224B

Abstract: 1N5221B 1N5222B 1N5223B 1N5225B 1N5226B 1N5267B
Contextual Info: DATA SHEET 1N5221B~1N5267B SILICON ZENER DIODES 2.4 to 75 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

zener diode si 18

Abstract: 6G zener diode MESS DO-213AB ZMY100G ZMY10G ZMY11G ZMY12G ZMY13G ZMY15G
Contextual Info: ZMY1G … ZMY100G 1.0 W Planare Si-Zener-Dioden für die Oberflächenmontage Surface mount Silicon-Zener Diodes (planar technology) Version 2005-01-18 1.0 W 0.5 Glass case MELF Glasgehäuse MELF 0.5 Nominal Z-voltage Nominale Z-Spannung Type Typ 5.0 2.5

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

"Audio Filters"

Abstract: CA04F2FT5AUD010 CA04F2FT5AUD010G
Contextual Info: Direct Link 1185 Applications & Cases Integrierter ESD/ EMI-Schutz Juli 2009 High Fidelity Immer mehr Elektronik in tragbaren und drahtlosen Geräten lässt diese für elektrostatische Entladungen ESD und elektromagnetische Interferenzen (EMI) zunehmend anfälliger werden. Vor allem die EMI müssen gemindert

Contextual Info: BZX55C2V4~BZX55C75 AXIAL LEAD ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 500 mWatts FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in comply with EU RoHS 2011/65/EU directives

Contextual Info: DATA SHEET 1N5221B~1N5267B SILICON ZENER DIODES 2.4 to 75 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in comply with EU RoHS 2002/95/EC directives

BZX55-C13

Abstract: BZX55-C8V2 BZX55C13 BZX55C6V2 BZX55C5V1
Contextual Info: BZX55C2V4~BZX55C100 AXIAL LEAD ZENER DIODES VOLTAGE 2.4 to 100 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Acqire quality system certificate : TS16949 • Manufactured in accordance with AECQ101

HZ2A1

Abstract: HZ15-1 HZ6C HZ-12B1 HZ4B3 HZ11A3 HZ27-3 hz9a2 HZ20-3 HZ4C
Contextual Info: HZ2A1 . HZ36-3 500 mW HZ2A1 . HZ36-3 (500 mW) Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden Version 2012-11-19 Maximum power dissipation Maximale Verlustleistung 3.9 62.5 Nominal Z-voltage Nominale Z-Spannung 1.6.38 V Glass case Glasgehäuse

POWERSEM

Abstract: module RBSOA RBSOA
Contextual Info: Application Note from Europe for the World • handling European PowerSemiconductor and Electronics Company + $6 *KIJ 2QYGT /QFWNGU IGBTs are electrostatic-sensitive devices. While handling the modules, gate and auxiliary emitter terminals must be short-circuited by a metal stripe to prevent

Contextual Info: 1N5221B~1N5266B SILICON ZENER DIODES 2.4 to 68 Volts VOLTAGE POWER 500 mWatts FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA

zener 3a6

Contextual Info: MM3Z2V4 . MM3Z100 Zener-Diodes Surface mount Zener Diodes Zener-Dioden für die Oberflächenmontage Version 2004-06-22 Power dissipation – Verlustleistung 200 mW 1.7 Type Code 1.25 0.3 1 Nominal Zener voltage Nominale Zener-Spannung 2.5±0.2 Dimensions / Maße in mm

SIEMENS thyristor

Abstract: OPTOCOUPLER thyristor din 41 siemens OF IC 741 DIN 41 782 mos Turn-off Thyristor diode din
Contextual Info: Symbole, Begriffe, Normen Symbole und Begriffe der w ichtigsten Größen Symbole Begriffe C C,o Kapazität Optokoppler-Kapazität Eingang/Ausgang Eingangskapazität Ausgangskapazität Rückwirkkapazität Kapazität (Sensor/Source) Tastverhältnis/Tastgrad (D = i0/r )

zener diode si 18

Abstract: DO-213AB do213ab
Contextual Info: ZMY 1 G … ZMY 100 G 1.0 W Planare Si-Zener-Dioden für die Oberflächenmontage Surface mount Silicon-Zener Diodes (planar technology) Version 2004-05-13 1.0 W 0.4 0.4 Nominal Z-voltage – Nominale Z-Spannung Type Typ 5.0 2.5 Maximum power dissipation

zener diode si 18

Abstract: DO-213AB
Contextual Info: ZMY 1…ZMY 200 1.3 W Surface mount Silicon-Zener Diodes (non-planar technology) Flächendiffundierte Si-Zener-Dioden für die Oberflächenmontage Version 2004-05-13 1.3 W 0.5 0.5 Nominal Z-voltage – Nominale Z-Spannung Type Typ 5.0 2.5 Maximum power dissipation