ZENER DIODE ITT 150 Search Results

gauss sensor

Abstract: HALL-EFFECT IC ic an 5275 diagram Zener diode itt 150 V
Contextual Info: 5275 COMPLEMENTARY OUTPUT P o w e r H a l l LATCH Type UG N5275K latching Hall effect sensors are bipolar integrated circuits designed for electronic comm utation of brushless dc motors. They feature open-collector com plem entary power outputs that are

diode cross reference 1s1555

Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Contextual Info: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,

Zener diode 5.6 itt

Abstract: Zener diode itt Zener diode itt 5.6 Zener diode itt 150 V itt diodes 8.2 0SGH33 1N4742A allegro 51
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0S0M338 QQDbS33 460 ■ ALGR ZENER DIODES 1 WATT0, W SERIES, 5.6 V to 51 V ELECTRICAL CHARACTERISTICS at TA = + 25°C, T, < + 175°C, VF = 1.5 V Max. @ IF = 200 mA Surge Max. Zener Impedance Max. Leakage Current Current Device

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

Contextual Info: ET13 0 Supertex inc. P ro g ra m m a b le E n co der Ordering Information Device Package _ Order Number ET13 20-Pin Plastic DIP ET13P ET13 20-Pin SO Surface Mount ET13WG Features General Information ! i High density transmit only ED device

CA3083

Abstract: Programmable Unijunction Transistor CA3183E CA3183AE "Programmable Unijunction Transistor" SCR firing unijunction thyristor firing circuit CA3097 unijunction application note ge scr package
Contextual Info: Transistor-continued Arrays General-Purpose High-Current N-P-N Transistor Arrays CA3083 CA3183 CA3183A A p p lica tio n s and Features 5 independent transistors plus separate substrate connection Matched pair Q1 arid Q 2 : V|Q (V fiE m atched): ± 5 m V m ax.

Contextual Info: G E SOLID STATE 01 D E | 36 75 0 6 1 ODlMtES 7 | _ Arrays CA3097 Thyristor/Transistor Array For Military, Commercial, and Industrial Applications Features: • Complete isolation between elements m n-p-n transistor - VCeo = 30 V min. Ic = 100 mA (max.)

2SD1783

Contextual Info: Is 7 > V £ / T ransistors 2SD1783 2SD1783 i t N P N y u n > ^ - u > h> V y ' s v Z V Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • \fi£ED/Dim ensi6ns U n it: mm NiryiV;Vdi-7- 1) =i u ? 3 • A : - ^ f y 5 C 6 0 V ( p 'y x ^ - $ -i T - K £ r t i t

Contextual Info: ROHM CO L T D h '7 > y 40E VÖSÖTRT » 0 0 D S ci 2 1 $ / I r a n s is t o r s 1 ¡RHU 2SD1647 ” - T-33-2 ? I # ® j j S a * l i 1 i f f l / L o w Freq. Pow er Amp. Epitaxial Planar NPN Silico n Darlington Transistor

Contextual Info: h ~ 7 > y Z 5 t / Tr ansi st or s 2SD1647 2SD1647 NPN y 'J b> ' JI>j£ii:fritlliffl/Low Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • a S4 SI V 'A 'd l-r • ^ i-J f^ ^ H /D im e n s io n s U n it: mm : — x falic 60 V co " j x 1~

PC3000

Abstract: 20-HIM 1DI400MN-120 M118 B362 tzis
Contextual Info: 1 D I4 0 0 M IM -1 2 0 4 0 0 A : Outline Drawings V s7 > i > X f sE i > 3 . - ) U POW ER T R A N S IS T O R M ODULE 1ï “ rA •ifêHi: : Features • hFE*'”i ^ High DC Current Gain • ( * - K rt M : Applications • General Purpose Inverter ? •

VRE3021

Abstract: VRE3021A VRE3021B VRE3021C VRE3021J VRE3021K VRE3021L
Contextual Info: VRE3021 Low Cost Precision Reference THALER CORPORATION • 2015 N. FORBES BOULEVARD • TUCSON, AZ. 85745 • 520 882-4000 FEATURES • 2.048 V Output ± 0.205 mV (.01%) PIN CONFIGURATION • Temperature Drift: 0.6 ppm/°C • Low Noise: 1.5 µV p-p (0.1Hz-10Hz)

1DI300ZN-1

Abstract: JE711 JE71 B348 zener ci 5t
Contextual Info: 1DI300ZN-120 300A ✓ < 7 - : Outline Drawings 7 h POWER TRANSISTOR MODULE : Features • hpE^'fiH-' High DC Current Gain • f * - K rt* • a e ^ O T ia ^ t - t : Applications • i/ L ffl'f V’-'i— 9 General Purpose Inverter • Uninterruptible Power Supply

Contextual Info: MPD8020 '1 i, ' ,J\ CMOS/DMOS SEMICUSTOM ^: HIGH VOLTAGE ARRAY CONCEPT FEATURES T h e M P D 802 0 is a m o n o lith ic I.e . s e m ic o n d u c to r a rra y o f lo w v o lta g e C M O S a n a lo g and d ig ita l c irc u its o n th e sam e c h ip w ith h ig h v o lta g e D M O S p o w e r tra n s is to rs .

UGN3140U

Contextual Info: 5140 PROTECTED P owebH all SENSOR — LAMP/SOLENOID DRIVER The UGQ 5140K unipolar Hall effect switch is a m onolithic integrated circuit designed for magnetic actuation of low-power incandescent lam ps or inductive loads such as relays or solenoids. Included on chip is a Darlington pow er output that is capable of continu­

1A001

Contextual Info: SILICON NPN EPITAXIAL TYPE MP3001 DARLINGTON POWER TRANSISTOR 3 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 2 Cl2±a,2 LOAD SWITCHING. FEATURES • Small Package by Full Molding.

BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Contextual Info: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

K460

Abstract: 1di200
Contextual Info: 1DI200ZP-120 200A h 7 ' < * 7 - i> = L - ) V '• Outline Drawings POWER TRANSISTOR MODULE ■ 4# ^ : F e atu res • hFEA^lav,' High DC C urren t Gain • K rt* • seifiSwiffiB&'it ■ f f l i i l : A p p lic a tio n s • i/L ffl-f w < — £ General Purpose Inverter

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

ULN2003A application

Abstract: relay driver ULN2003A ULN2003AD ULN2003A ULQ2003A uln buffer ULN2003AJ ULN2003ANS
Contextual Info: ULN2001A, ULN2002A, ULN2003A, ULN2004A, ULQ2003A, ULQ2004A, HIGH-VOLTAGE HIGH-CURRENT DARLINGTON The ULN2001A is obsolete TRANSISTOR ARRAY and is no longer supplied. SLRS027D – DECEMBER 1976 – REVISED JULY 2002 D D D D D D D ULN2001A . . . D OR N PACKAGE

LS05-A

Contextual Info: F A IR C H IL D A pril 1998 SEMICONDUCTOR -, FDC6321C Dual N & P Channel, Digital FET General Description Features These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

V5.5MLA1206T23

Contextual Info: b3E D • 43G5571 004fl4b2 ITT « H A S ML Series 33 HARR IS SE MI C O N D SE CT OR Multilayer Transient Surface Mount Surge Suppressors AuQust 1993 Features • Laadless Chip Form - Zero Lead Inductance • Multilayer Surface Mount Surge Suppressor • +125°C Continuous Operating Temperature

chip die npn transistor

Abstract: MM1007
Contextual Info: 0PLESSEY FEBRUARY 1989 Semiconductors MM Series Macrochip Analog Semicustom Arrays DESCRIPTION The MM "Macrochip" series utilizes a standard bipolar pro­ cess allowing for operation at voltages up to 20V. Typical circuit blocks for the MM series include pre-amplifiers, com­