Z3 IB Search Results

9006S

Abstract: crt 9006 135
Contextual Info: STANDARD MICROSYSTEMS CORPORATION, CRT 9006-135 CRT 9006-83 Single Row Buffer SRB 1 W 24 D GND 2 23 D DOUT4 3 22 ZJ DOUT5 4 21 Z3 DOUT6 5 20 □ DOUT7 6 19 =1 öl ? _ b 13 OF 8 - 17 Z3 DIN7 9 16 ^ DIN6 10 15 □ DIN5 11 14 ^ DIN4 12 13 □ +5V Package: 2 4-pin D I P.

bzx98

Abstract: IN4000 bzx98c20 IN4000 series Z3B6.8 BZX98C3V9 IB43 bzx98c in3015 IN2937
Contextual Info: Z3 Series 1Cl» W Voltage Regulator Diodes A range of high power zener and avalanche diodes available to 9305-F-079 in a hermetically sealed D04 glass package in both unipolar and bipolar configurations. Pmaxcont- :- ;- 10W

8424

Abstract: S4 9D 208H DMI36223
Contextual Info: tw}}su8szv 2|-x7 30z,|4 z*x2xz4|2+34+z3 =`U\Xag gX`cXeTgheX < /62 LTgXW ib_gTZX< 472P=> gb 92 LTgXW VheeXag < 9= ,cXe cb_X- ?\X_XVge\V fgeXaZg[ `\a0 < 4222P=> ,UXgjXXa \achg + bhgchg- LXgT\aXe glcX < 3:AA/C5 ,J_Tfg\V eXgT\aXe3:AA/C7 ,MgXX_ eXgT\aXe- TiT\_TU_X

208H

Abstract: DMI36223 C338
Contextual Info: tws}}r u8r zvrv 2|-x7 30z,|4 z*x2xz4|2+34+z3 =`U\Xag gX`cXeTgheX < /62 LTgXW ib_gTZX< 472P=> gb 92 LTgXW VheeXag < 32= ,cXe cb_X- ?\X_XVge\V fgeXaZg[ `\a0 < 7222P=> ,UXgjXXa \achg + bhgchg- J_Tfg\V eXgT\aXe glcX < 362AA/C3 GTe^Xe glcX< 362AA/G3 GbWh_X glcX <

LM337HVT

Abstract: Seagate Microelectronics
Contextual Info: SEAGATE < W MICROELECTRONICS S e a g a te 30E D • ADTSObG M icroelectronics Lim ited □□□D3fl3 T -5 7 ■ SEAG %-\\-Z3 1.5A, 3-TERMINAL NEGATIVE ADJUSTABLE REGULATORS IP137A, IP137, LM137, IP137AHV, IP137HV, LM137HV, IP337AHV, IP337HV, LM337HV DESCRIPTION

Q 451

Abstract: DMI36223 208H X705
Contextual Info: tw}}s v8s zu 2|-x7 30z,|4 z*x2xz4|2+34+z3 =`U\Xag gX`cXeTgheX < /62 LTgXW ib_gTZX< 472P=> gb 92 LTgXW VheeXag < 9= ,cXe cb_X- ?\X_XVge\V fgeXaZg[ `\a0 < 4222P=> ,UXgjXXa \achg + bhgchg- LXgT\aXe glcX < 3:AA/C5 ,J_Tfg\V eXgT\aXe3:AA/C7 ,MgXX_ eXgT\aXe- TiT\_TU_X

L4255

Abstract: c 3807
Contextual Info: tw}}s v8s zu 2|-x7 30z,|4 z*x2xz4|2+34+z3 =`V]Yag gY`cYeUgheY < /62 LUgYX ib_gU[Y< 522P=> gb 92 LUgYX WheeYag < 34= +cYe cb_Y, Dafh_Ug]ba ib_gU[Y +G]a0, < 7222P=> JebgYWg]ba XY[eYY ?DH62272 < DJ42 A]_Y Hb0<L4255;95 A]_Y Hb0<@475592 MWeYj gYe`]aU_. ?DH eU]_ 1 MWeYj `bhagYX.

2sc1586

Contextual Info: <z3£fni-£onau.ct:oi iJ-^ioaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA909 DESCRIPTION • High Power Dissipation: Pc= 150W(Max.)@Tc=25°C • Collector-Emitter Breakdown Voltage: V(BR)CEo= -200V(Min.)

EK42

Abstract: 234Z-3 N3223 zbe 203
Contextual Info: tw}}r t8r zurtsusv 2|-x7 30z,|4 z*x2xz4|2+34+z3 >`V]Yag gY`cYeUgheY < /62 gb 92 MUgYX ib_gU[Y < 522Q>? MUgYX WheeYag < 34>ncYe cb_Yo Eafh_Ug]ba ib_gU[Y +H]a0, < 7222Q>? KebgYWg]ba XY[eYY @EI62272 < EK42 NbW^Yg `UgYe]U_ < B]_Y Ib0<A475592 K>88-CB Q2 +PG, ?bagUWgf fce]a[ `UgYe]U_ <

Contextual Info: RAYTHEON/ SEMICONDUCTOR T4 Small Signal Transistors PRODUCT SPECIFICATIONS 7597360 RAYTHEON IE O N . GC » r i Y S T Y B L O 00D5517 S E M IC O N D U C TO R . Ä 05517 94D High Voltage General Purpose Amplifiers and Switches D T - ¿? -Z3 PNP Popular Types

71C4400A

Contextual Info: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ namic RAM organized 1,048,576 x 4 Bits. GM71C4400A/AL has realized higher density, higher per­

ICE 47E

Contextual Info: GOLDSTAR TECHNOLOGY I N C / 47E ]> 402 A7S 7 000 33^5 GoldStar □ • GST T-V6-Z3-/5 GM71C1000/L 1,048,576 WORDS x l BIT CMOS DYNAMIC RAM Description Features The GM71C1000/L is the new generation dynamic RAM organized 1,048,576 x 1 Bit. GM71C1000/L has realized higher density, higher performance

Teltone M-982-02s

Contextual Info: M-982-02 Precise Call Progress Tone Detector • Precise detection of call progress tones • Linear analog input Vtm C • Digital (CM OS compatible), tri-state outputs 1. ^ 22 z m s ta tte 2 NC C • 22-pin DIP and 20-pin SO IC 21 ZINC 20 Z3 5IRRHSE 3

Contextual Info: L O GI C D E V I CE S / INC IbE D SSbSTOS ODGBSSb b 16Kx 4 Static RAM L 7 C 1 6 4 / 1 6 5 / 1 6 6 T-V é -Z3-IO Features Description □ 16K by 4 Static RAM with common I/O The L7C164, L7C165, and L7C166 are high-performance, low-power CMOS static RAMs. The storage cells are

1P NPN

Abstract: FFB2222A FMB2222A MMPQ2222A SC70-6 SOIC-16
Contextual Info: Is S'-^iC T Z3 NSCJLJC: * "T»»? FMB2222A MMPQ2222A C2 E1 C1 E1 pin#1 p-E2 B1 B2 % SC70-6 SuperSOT -6 Mark: .1P Mark: .1P / MMPQ2222A pin#1 • C1 SOIC-16 C1 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power am plifier and switch requiring collector

BD934

Abstract: B0937 B0941 BD937 B0939 BD941 BD934 philips BD933 IEC134 c 939
Contextual Info: BD933; 935 BD937;- 939 BD941 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 fiEb 0 0 4 3 D 44 41b IPHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-Z3~0*=i N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur.

bfy56

Abstract: BFX56 BFY56A 5014M Y56A
Contextual Info: 3DE D rZ Z ^7# • DOBIOCH 4 ■ '"’p S ' ,Z3> S G S -T H O M S O N BFY56 BFX56A S G S-THOMSON AMPLIFIERS AND SWITCHES DESCRIPTIO N The BFX56 and BFY56A are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for amplifier and switching applica­

Contextual Info: ELECTRONIC DESIGNS INC 3DE D • 3230114 0000530 7 ■ ^EDI_ Eiaciionie Designs inc. tf/gf/? r-v ^ -z3 */ V Features T h e ED I2 0 9 0 C is a high performance, 1 megabit synchronous static R A M organized as 128 K x 9 bits, available in six versions. Inputs are registered or latched on the rising edge o f

Contextual Info: M-*¡r 1I 1 ; a gKy*, ,R O Z Z3:0HHTiFÎGÂTI0M color — ~ :. bamd .s :- s e o i d t e _~ :& m o R m v z SIZE io ONLY =,02û'Miï£ L ¥ . % w £ lW ° • i& p m s m v . S EE MOTE .H D # . ' TSRST COLORANO TO BE. AP.PRÔX.

STR F 5653

Abstract: STR 5664 STR G 5653
Contextual Info: G EN L in str / ^ ^ power SLE General ^ Semiconductor • Industries, Inc. D 3ÔT Ü1 3 7 T-K -Z3 GGGH^GT 250 I RANSZORB T R A N S IE N T VO LTA G E SUPPRESSORS 1N5629 THRU 1N5665A FEATURES APPLICATION CONT'D > 1500 watts Peak Pulse Power dissipation i Available in ranges from 5.5 to 171

2SC1848

Abstract: 2SA887
Contextual Info: PANASONIC INDL/ELEK-CSEMI} 75C D | 1^3505^1 h =ÿyvxs ' T - 3 "B - 1 7 1 2 sa8 8 7 2SA887 '> ij Z3 y P N P j z b ° $ Jr'> y j u y ls —j - f ô / S i P N P Epitaxial Planar Power Amplifier <J J > $ < ' ) /C om plem entary Pair with 2SC1848 £ ^ U nit ' mm

N209f

Contextual Info: ;X5:Z3 - KMo N*5239A N O . ^ 5239A 41996 i . - X 'SNc-5239 LE28F4001M, T, R-15/20 CM OS LSI 4M 5242887-FX8^ / 777'>i3^ LE28F4001M, T, Rl±, 524288 7 - H x 8 t -V h X V ;K - !' K . J S f% WfflCMOSHÏ«iOfÎffli;i U. * i î , filiti« fccOffiV' J: ÿ fe £ : ¡ g y r i '$

Contextual Info: 30E 3> un • 7^237 0D31Q77 T ■ -Z3 B S Y 53 B S Y 54 S G S -T H O M S O N laJÛTTOMDigS S G S-THOMSON GENERAL PURPOSE AMPLIFIERS DESC RIPTIO N The BSY53 and BSY54 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, inten­ ded for use in general purpose amplifiers.

2SC2036

Contextual Info: TOSHIBA {DISC RE TE /O PT O} ÏT 9097250 TOSHIBA D I S C R E T E / O P T O 3 9 G 01920 O SEMICONDUCTOR TECHNICAL DATA O O DE p T C H T S S D D O O n S D T - 3 I-Z3 I S h S y - í í ; TOSH IBA T R A N S IS T O R 2 S C 2 O3 6 SILICON NPN EPITAXIAL TYPECPCT PROCESS)*-