Katalog tesla tranzistor
Abstract: KF520 KF173 Tesla katalog KF630D KF521 ku611 KD502 KF517A kf517
Contextual Info: kremikovych tranzistoru TESLA ROZNOV K O N S T R U K C N Í K A T A L O G P O LO VO D I C O V Ÿ C H S O U C A S T E K l E I U SVAZEK C E x p o r t EX PO R T IM P O R T KOVO PRA H A C Z E C H O SL O V A K IA : OS 8 Jankovcova 2 170 88 P R A H A 7 CZECHOSLOVAKIA
|
OCR Scan
|
kfy18kfy34kfy46ksy63+11ksy82katalog tesla tranzistorkf520kf173tesla katalogkf630dkf521ku611kd502kf517akf517
|
PDF
|
keramische Werke Hermsdorf
Abstract: Mischstufen VEB Keramische Werke OA741 OA645 OA625 hermsdorf OA665 neue halbleiterbauelemente Amateur
Contextual Info: HalbleiterBauelemente Dioden Germanium dioden Type Durchlaß spannung U a k IVI Durchlaß strom Sperr spannung lA K l m A l U k a |V| Sperrstrom IKA li'AI max. zuläss. Sperr spannung jEä max. zuass. Durchlaß strom UKAma* IVI ^AKmax !mAl Bau
|
OCR Scan
|
keramische werke hermsdorfmischstufenveb keramische werkeoa741+6oa645oa625hermsdorfoa665neue halbleiterbauelementeamateur
|
PDF
|
Q62702-F979
Abstract: BF599
Contextual Info: NPN Silicon RF Transistor ● Common emitter IF/RF amplifier ● Low feedback capacitance due to shield diffusion BF 599 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) BF 599 NB Q62702-F979 B SOT-23 E C Maximum Ratings Parameter
|
Original
|
q62702-f979ot-23iy21ebf599 |
PDF
|
Katalog CEMI
Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
Contextual Info: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby
|
OCR Scan
|
katalog cemioa81 diodebyp 660-50rphilips bc147+6p 181 transoptormullard oa81hitachi 12v ms 5a-181oa81ba102 diodetelefunken hr 780 rds
|
PDF
|
IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
|
OCR Scan
|
q60103-ths10to3530to4600+10iao5 sharpfree transistor equivalent book 2scsiemens transistor asy 27diode bay 61transistor bj 131-6tesla typ 202 thyristorteslaz1072hall effect 21ez1071
|
PDF
|
MP21E
Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
Contextual Info: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR
|
OCR Scan
|
mp21esowjetische transistorenmp21dudssr+6kt904asz16kt315oc1072transistoren ddrasz1015
|
PDF
|
MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
|
OCR Scan
|
1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
|
PDF
|
mosfet p321
Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS
|
Original
|
an215a/dan215amosfet p321motorola an215a application+8y12tusing linvill techniquesan166 linvillh12c transistor makingdual-gate ybmotorola an215ay parameters of transistorsy11t
|
PDF
|
c22e
Abstract: Q62702-F944 transistor marking 550 g22E y21e QBF550 transistor BF 450
Contextual Info: PNP Silicon RF Transistor ● For common emitter amplifier stages up to 300 MHz ● For mixer applications in AM/FM radios and VHF TV tuners ● Low feedback capacitance due to shield diffusion ● Controlled low output conductance BF 550 Type Marking Ordering Code
|
Original
|
q62702-f944ot-23c22etransistor marking 550+4g22ey21eqbf550transistor bf 450
|
PDF
|
C520D
Abstract: rft lautsprecher vqe23 1PP75 Transistoren DDR MAA725 Radio Fernsehen Elektronik U706D Halbleiterinformation U311D
Contextual Info: H a lb le ite rin fo rm a tio n e n - 74 M itte ilu n g aus dem VEB K o m b in a t H a lb le ite rw e rk F ra n k fu rt/O . Ing. W O L F R A M a FISCHER S o w jetische T ra n s is to re n 2 5 Germ anium -npn-Legierungstransistoren M n 35 bis M FI 38 A Teil 1
|
OCR Scan
|
c520drft lautsprechervqe231pp75+6transistoren ddrmaa725radio fernsehen elektroniku706dhalbleiterinformationu311d
|
PDF
|
MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
|
OCR Scan
|
108thmt11152n3303fpt100 phototransistor+7ua739 equivalenttransistor bc 554 pnpmt1039ft2974fairchild 2n3565fd6666 diodetransistor npn epitaxial silicon sst 117
|
PDF
|
transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
|
OCR Scan
|
an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
|
PDF
|
AN215A
Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation
|
Original
|
an215a/dan215amosfet p321y12t+7using linvill techniquescommon base amplifier circuit designingusing linvill techniques for r. f. amplifiersy11th21by12fcommon emitter amplifier circuit designing
|
PDF
|
Katalog tesla tranzistor
Abstract: OC26 Tesla katalog GS507 156NU70 TESLA 102NU71 GF-50 OC30 Tesla 2NU74
Contextual Info: È o n s ìr n k É iii h i a l o j f germanìovych tranzistoru T E S L 4 R O Z N O V K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek
|
OCR Scan
|
tt346baf139tt346eit346b+10katalog tesla tranzistoroc26tesla kataloggs507156nu70tesla102nu71gf-50oc30 tesla2nu74
|
PDF
|
|
|
GS507
Abstract: Katalog tesla tranzistor Tesla katalog OC169 TRANZISTOR CATALOG GS506 156NU70 GS508 OC170 OC30 Tesla
Contextual Info: in t in t ili it t ilif germaniovvch tranzistorû T E IIA ROZNOV K O N S T R' U K C N I K A T A L O G P O LO V O D I C O VŸC H S O U C A S T E K TESLA SVAZEK B Export: Koro D ep. 8 P R A H A 10 C Z EC H O SLO V AKIA Konstrukcní katalog polovodicovycti soucástek
|
OCR Scan
|
r02n0vtt346baf139gs507+9katalog tesla tranzistortesla katalogoc169tranzistor cataloggs506156nu70gs508oc170oc30 tesla
|
PDF
|
MC789P
Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
Contextual Info: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series
|
OCR Scan
|
c300/m1000/mmc660c500/m+16c2100/mc2000c3000930/mc200/mc900/mmc789pmc946f/mc789pl9945mc2100 elsmc1110gmc787pmc879psg4002mc779pmc892p
|
PDF
|
BF167
Abstract: J BF167 TEWA 00156033 CE25 T072 t448
Contextual Info: 12- 74/2 T R A N Z Y S T O R n-p-n & BF167 SWW 1156-213 Tranzystor krzem ow y planarny m alej m ocy w ielk iej czQ stotliwoici. Jest przeznaczony do stosow ania w stopniu regu lacyjnym w zm acniacza poSredniej cz^stotliwoSci w izji odbiorriik6w telew izyjn ych .
|
OCR Scan
|
bf167j bf167tewa00156033+3ce25t072t448
|
PDF
|
BF173
Abstract: TEWA tranzystor ne 1374 BF 173
Contextual Info: TRANZYSTOR BF173 n-p-n SWW 1156-213 T ra n z y sto r k rz em o w y e p ip la n a rn y m aie j m ocy w ielk ie] czQstotliwosci. J e s t p rzezn aczo n y do sto so w a n ia w sto p n ia c h w y jsc io w ych w zm acn iaczy p o sre d n ie j cz^stotliw osci w iz ji odb io rn ik ó w tele w izy jn y ch .
|
OCR Scan
|
bf173tewatranzystorne 1374+1bf 173
|
PDF
|
mosfet p321
Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation
|
Original
|
an215a/dan215amosfet p321y12t+7using linvill techniquesusing linvill techniques for r. f. amplifiersy11tan166b22k2s122z12
|
PDF
|
mh7493
Abstract: MA0403A maa 502 MH1SS1 Katalog tesla diod MH7442 MH7404 MA0403 MAA723 MH74S74
Contextual Info: POLOVODICOVÉ S O U C Á S T K Y PftEDPIS PRO P Ä JEN l Polovodicove soucdstky Jsou velml choulostlvd na nadmernS otepleni. Proto, aby nedochazelo k je jich poskozeni, do p o ruiuje se zachovat tento postup pfl pd jenf: Konce pnvodii je nutno predem ocinovat v delce 4 - 5
|
OCR Scan
|
mh7493ma0403amaa 502mh1ss1+6katalog tesla diodmh7442mh7404ma0403maa723mh74s74
|
PDF
|
BFX60
Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
Contextual Info: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier
|
OCR Scan
|
bfx60q60206-xp21e510z5+2bfx 63transistor for rf amplifier
|
PDF
|
BF214
Abstract: BF215 BF-215 J BF214 y12c GE c22c C22C C22E MAF100 y12e
Contextual Info: TRANZYSTORY BF214 i BF215 19-74/2 n -p -n SWW 1156-213 T rarizy sto ry krzem o w e e p ip la n a rn e m ale j m ocy w ielk iej cz^stotliw osci. T ra n z y sto r BF214 je st przezn aczo n y do sto so w a n ia we w z m acn iaczach poSredniej cz^ stotliw osci o d b io rn ik o w r a diow ych AM oraz A M -F M i poSredniej cz^stotliw oSci
|
OCR Scan
|
bf214bf215ly21ely126i+8bf-215j bf214y12cge c22cc22cc22emaf100y12e
|
PDF
|
AF429
Abstract: tranzystory AF428 AF426 AF430 AF427
Contextual Info: T R A N Z Y S T O R Y p-n-p O AF426, AF427, AF428, AF429 i AF430 SWW 1156-213 T ranzystory germ anow e stopow o-dyfuzyjne m alej mocy w ielkiej cz^stotliwosci. T ranzystory AF426 i AF427 przeznaczone do stosow ania w e w zm acniaczach poSredniej cz^stotliwosci w tran zystorow ych odbiornikach AM/FM oraz w e w zm acnia
|
OCR Scan
|
af426af427af428af429+2af430tranzystory
|
PDF
|
Motorola transistors MRF 947
Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,
|
OCR Scan
|
motorola transistors mrf 947motorola hep cross reference2n50702n5591 motorola+6semicon volume 1mrf532transistor equivalents for 2n3866siemens semiconductor manualmicrolab splitter specification sheetpt9797
|
PDF
|
