X5555 Search Results

Contextual Info: , SGS-THOMSON . raDwunnteinMiiiiiDei M29W040 VERY LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512Kx 8, Sector Erase FLASH MEMORY • FAST ACCESS TIME: 100ns ■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ BYTE PROGRAMMING TIME: 12|us typical

1N914

Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE

Contextual Info: M29F400T M29F400B SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte/16µs by Word

29V040

Contextual Info: S G S -1 H 0 M S 0 N 6 fflD ^©HlLll g'ìnE(S R!lfl(gi M29V040 LOW VOLTAGE SINGLE SUPPLY 4 Megabit (512K x 8, Sector Erase) FLASH MEMORY PRODUCT PREVIEW FAST ACCESS TIME: 120ns 3.3V ± 0.3V SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS 3.3V ± 0.3V SUPPLY VOLTAGE in READ

Contextual Info: M29F200T M29F200B SINGLE SUPPLY 2 Megabit x8/x16, Block Erase FLASH MEMORY TARGET SPECIFICATION DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word

Contextual Info: M29F400T M29F400B SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY PRODUCT PREVIEW DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word

7130H

Abstract: tvh07
Contextual Info: S G S -T H O M S O N M29F040 [M Q É » i[L i{ O T ( M ( g § SINGLE SUPPLY 4 Megabit (512K x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 70ns ■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5 V ± 10% SUPPLY VOLTAGE In READ

Contextual Info: In tegrated D e vice T e ch n o lo g y , Inc. CMOS Triple Bus SyncFIFOT With Bus-Matching 256x36x2, 512x36x2, 1024x36x2 PRELIMINARY IDT723626 IDT723636 IDT723646 NOTE: The errata notice on the last page describes corrections that have already been added to this document.

A17F

Abstract: microcontroller based automatic power factor control AD0-AD15 PSD813FH PSD813FN A14F A8-15 80C31 instruction set
Contextual Info: Programmable Peripheral PSD813FN/FH Field-Programmable Microcontroller Peripherals with Flash Memory and Embedded Micro⇔Cells TM Preliminary Introduction The PSD813FH and PSD813FN devices are field-programmable microcontroller MCU peripherals with Flash memory. These multi-chip modules (MCM) are the first two members

plcc32 pinout

Abstract: PLCC32 TSOP32 M29F040 X5555
Contextual Info: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS 5V ± 10% SUPPLY VOLTAGE in READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME

M29F040

Abstract: PLCC32 TSOP32
Contextual Info: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Sector: 1.0 sec typical – Bulk: 2.5 sec typical

Contextual Info: S G S -T H O M S O N B M llLlim W D ei_ M29F040 SINGLE SUPPLY 4 Megabit 512Kx 8, Sector Erase FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ BYTE PROGRAMMING TIME: 10^s typical ■ ERASE TIME

Contextual Info: Programmable Peripheral PSD813FH/FH Preliminary Introduction Field-Programmable Microcontroller Peripherals _with Flash Memory and Embedded M icro s Cells The PSD813FH and PSD813FN devices are field-programmable microcontroller MCU peripherals with Flash memory. These multi-chip modules (MCM) are the first two members

ad149

Abstract: weitek 3164
Contextual Info: 3164/3364 64-BIT FLOATING-POINT DATA PATH UNITS November 1989 1. Features 64-BIT FLOATING-POINT DATA PATH FULL FUNCTION 64-bit and 32-bit floating-point and 32-bit integer multiplier Divide and square root operations Single-cycle pipeline throughput for the following

Contextual Info: M29W040 VERY LOW VOLTAGE SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY FAST ACCESS TIME: 100ns 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 12µs typical ERASE TIME – Sector: 1.5 sec typical – Bulk: 2.5 sec typical

DIL32

Abstract: Thomson-CSF ceramic capacitor CDFP Cn32 M29F040 PDIP32 PLCC32 TSOP32 THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES
Contextual Info: M29F040 CMOS 4 Megabit 512K x 8,8 sectors SINGLE SUPPLY FLASH MEMORY DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the sector level, and programmed Byte-by-Byte. The interface is directly compatible with most microprocessors.

DG7-132

Abstract: 2BT-5 ci237 ha
Contextual Info: M29F400T M29F400B RiflD ®[i[Ui©iiMRflD©i SINGLE SUPPLY 4 Megabit x8/x16, Block Erase FLASH MEMORY SGS-THOMSON PRODUCT PREVIEW • DUAL x8 and x16 ORGANISATION ■ FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME

LCCC32

Contextual Info: M29F040 CMOS 4 Megabit 512K x 8,8 sectors SINGLE SUPPLY FLASH MEMORY DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the sector level, and programmed Byte-by-Byte. The interface is directly compatible with most microprocessors.

Contextual Info: /S T *7 # S G S -T H O M S O N ^Q g®(Q [I[L[i TO®KilO(gi M 29F040 SINGLE SUPPLY 4 Megabit (512Kx 8, Sector Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5 V ± 10% SUPPLY VOLTAGE in READ

vme bus specification

Abstract: X74-138 Xilinx XC73108 Ipad ipad 2 design a5 to 32 line decoder XC7000 PLD VME AD10 AD11
Contextual Info: VME Data Acquisition Interface and Control in a Xilinx XC7000†  September, 1994 Application Note By PATRICK KANE Introduction VME A/D Board The VME bus is a widely used and versatile asynchronous bus interface. This application note presents a data acquisition board which interfaces to the VME bus. The

Contextual Info: M29F100T M29F100B SINGLE SUPPLY 1 Megabit x8/x16, Block Erase FLASH MEMORY TARGET SPECIFICATION DUAL x8 and x16 ORGANISATION FAST ACCESS TIME: 70ns 5V±10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS TYPICAL PROGRAMMING TIME – 10µs by Byte / 16µs by Word

1N914

Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Contextual Info: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE

tsop32 8x20

Abstract: IA10 M29F040 PLCC32 TSOP32 DQ712
Contextual Info: SGS-THOMSON Vf li^D [^ Q [IL[l©ir[^©Ki]D(gS M29F040 SINGLE SUPPLY 4 Megabit (512Kx 8, Sector Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATIONS ■ BYTE PROGRAMMING TIME: 10^s typical

Contextual Info: SGS-THOMSON M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY FAST ACCESS TIME: 70ns 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 1ty s typical ERASE TIME - Sector: 1.0 sec typical - Bulk: 2.5 sec typical