lchb
Abstract: Marking LCHB smd laya marking code NF SMD Diode smd regulator 5pin m5 smd marking laya transistor smd marking NA sot-23 marking UM smd 5pin
Contextual Info: LP2985LV Micropower SOT, 150 mA Low-Noise Low-Dropout Regulator in SOT-23 and micro SMD packages for Applications with Output Voltages ≤ 2.3V Designed for Use with Very Low ESR Output Capacitors General Description Features The LP2985LV is a 150 mA, fixed-output voltage regulator
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lp2985lvot-23lchbmarking lchb+6smd layamarking code nf smd diodesmd regulator 5pin m5smd marking layatransistor smd marking na sot-23marking um smd 5pin
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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r09cl0001ej0100px10727ej02v0pffet marking code g5dpg2179tb+8marking code c3e sot-89marking code c1e mmicmarking code c1g mmic2sc3357/ne85634pg2163t5nsot-23 g6gpc8230tumarking code c1h mmic
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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g0706px10727ej02v0pfnec mosfet marked v75nec ga fet marking code t79+8fet marking code g5dmarking code c1g mmiclga 1155 pin diagrampb1507marking code c1e mmicmarking code c1h mmicpc8230tummic sot 363 marking code 77
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BAV70-A4
Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
Contextual Info: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film
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bav70ot-23c9/c2050mhz+12zc830azc831azc832abav70-a4diode marking z3 sot-23diode marking w8bav70amarking z6 sot-23 capacitancebas 20 sot23sot23 diode marking code avz6 diodebas16
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smd marking code lcsb
Abstract: smd marking ldqb OFA1202 ldrb marking smd code marking LP3985 LDQB LDRB lcrb LCZB marking LCJB
Contextual Info: LP3985 Micropower, 150mA Low-Noise Ultra Low-Dropout CMOS Voltage Regulator General Description Key Specifications The LP3985 is designed for portable and wireless applications with demanding performance and space requirements. LP3985 is stable with a small 1µF ± 30% ceramic or
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lp3985150masmd marking code lcsbsmd marking ldqb+7ofa1202ldrb markingsmd code marking lp3985ldqb ldrblcrblczb markinglcjb
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smd marking code lcsb
Abstract: LCRB lcjb ldo regulator MARKING CODE x2 sot23-5 OFA1202
Contextual Info: LP3985 Micropower, 150mA Low-Noise Ultra Low-Dropout CMS Voltage Regulator General Description Key Specifications The LP3985 is designed for portable and wireless applications with demanding performance and space requirements. LP3985 is stable with a small 1µF ± 30% ceramic or
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lp3985150mafurth49smd marking code lcsb+4lcrblcjbldo regulator marking code x2 sot23-5ofa1202
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LCJB
Abstract: LDQB LDRB LCRB smd marking code lcsb marking ldqb SOT23-5 smd sot 23 code x1 OFA1202 LCSB LCUB MF05A
Contextual Info: LP3985 Micropower, 150mA Low-Noise Ultra Low-Dropout CMOS Voltage Regulator General Description Key Specifications The LP3985 is designed for portable and wireless applications with demanding performance and space requirements. LP3985 is stable with a small 1µF ± 30% ceramic or
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lp3985150malcjbldqb ldrb+8lcrbsmd marking code lcsbmarking ldqb sot23-5smd sot 23 code x1ofa1202lcsblcubmf05a
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1GX04
Abstract: 2929 sop
Contextual Info: SN74LVC1GX04 CRYSTAL OSCILLATOR DRIVER www.ti.com SCES581A – JULY 2004 – REVISED SEPTEMBER 2005 FEATURES • • • • • • • • • Available in Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V
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sn74lvc1gx04sces581asn74lvc1gu04sn74lvc1g04+424-ma000-v1gx042929 sop
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SMD transistor 2x sot 23
Abstract: diode 2.0x smd DIODE smd marking A3 General Electric scr SOT-23 NATIONAL SEMICONDUCTOR MARKING CODE sot LP2980 LP2980-ADJ LP2980LV MF05A smd transistor marking A3 sot23
Contextual Info: December 5, 2008 LP2980LV Micropower SOT, 50 mA Low-Voltage Low-Dropout Regulator For Applications With Output Voltages < 2V General Description Features The LP2980LV is a 50 mA, fixed-output voltage regulator designed for high performance in applications requiring output
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lp2980lvot-23smd transistor 2x sot 23diode 2.0x smd+7diode smd marking a3general electric scr sot-23national semiconductor marking code sotlp2980lp2980-adjmf05asmd transistor marking a3 sot23
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BC237
Abstract: jedec package TO-226AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage
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bav99lt1236abj218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640bc237jedec package to-226aa
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BC237
Abstract: BF245 marking code M2 SOT23 BC547 collector characteristic curve 2n3053 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers BFR30LT1 BFR31LT1 N–Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 – 08, STYLE 10 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate – Source Voltage
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bfr30lt1bfr31lt1236abchar218a+9msc1621t1msc2404msd1819amv1620bc237bf245marking code m2 sot23bc547 collector characteristic curve2n3053 replacement
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IR3575
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 CASE 318 – 08, STYLE 12 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit VR 35 75 Vdc IF 100 mAdc
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BC237
Abstract: 2N5551 SOT23 2n2222 sot-23 418 motorola j112 fet free transistor BC547 temperature 2N3819 junction fet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,
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bss138lt1ot-23msc1621t1msc2404+13msd1819amv1620mv1624mv1636mv1640mv1642bc2372n5551 sot232n2222 sot-23418 motorolaj112 fetfree transistor bc547 temperature2n3819 junction fet
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transistor 5BM
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode MMBD6100LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 2 CASE 318 – 08, STYLE 9 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current
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transistor marking T79 ghz
Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority
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pu10015ej04v0pftransistor marking t79 ghzmarking code c1h mmicmarking code c3e sot-89+7upb1507marking code c1g mmicmarking code c1e mmicdata book transistors 2saupc2712pc3215transistor 2sa data book
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NCV4264
Abstract: NCV8664 Q100 smd A1 t IEC62132-4
Contextual Info: NCV8664 Ultra−Low Iq Low Dropout Linear Regulator The NCV8664 is a precision 3.3 V and 5.0 V fixed output, low dropout integrated voltage regulator with an output current capability of 150 mA. Careful management of light load current consumption, combined with a low leakage process, achieve a
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DELTA fan bfb
Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage
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mpsh81226aamsc1621t1msc2404+14msd1819amv1620mv1624mv1636mv1640mv1642delta fan bfbbc237transistor replacement for 2n3053bc547 replacet1 bc140bc108 motorola2n2222 sot323motorola lot markings
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V6645
Abstract: F2 ferrite NCV8664 NCV4264 Q100 On semiconductor date Code dpak suffix V66450G V66450 V66-4 On semiconductor date Code dpak YEAR A
Contextual Info: NCV8664 Very Low Iq Low Dropout Linear Regulator The NCV8664 is a precision 3.3 V and 5.0 V fixed output, low dropout integrated voltage regulator with an output current capability of 150 mA. Careful management of light load current consumption, combined with a low leakage process, achieve a
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ncv8664ncv4264ncv4264-2ncv8664/d+8v6645f2 ferriteq100on semiconductor date code dpak suffixv66450gv66450v66-4on semiconductor date code dpak year a
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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msa1022-ct1emitte218amsc1621t1msc2404+15msd1819amv1620mv1624mv1636mv1640mv1642mpf3821bc237mps8093bcy72mmbf4856mad130pmps3866bcy71 alternativebss72
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BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
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diode l 0607
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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BC237
Abstract: 16 pin dip with heat sink
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which
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BC237
Abstract: 2N3019 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistors Surface Mount MSD601-RT1* MSD601-ST1 COLLECTOR 3 2 BASE MAXIMUM RATINGS TA = 25°C 3 1 EMITTER 2 1 Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose Amplifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO – 60
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