MMBD2836LT1 Search Results

Contextual Info: ON Semiconductort MMBD2835LT1 MMBD2836LT1 Monolithic Dual Switching Diodes 3 MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage MMBD2835LT1 MMBD2836LT1 Forward Current 1 Symbol Value Unit VR 35 75 Vdc IF 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA

marking 556C

Contextual Info: ON Semiconductort MMBD2835LT1 MMBD2836LT1 Monolithic Dual Switching Diodes 3 MAXIMUM RATINGS EACH DIODE Rating 1 Symbol Value Unit VR 35 75 Vdc IF 100 mAdc Symbol Max Unit Total Device Dissipation FR− 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW

MMBD2835LT1

Abstract: MMBD2836LT1 sot-23 marking a2x
Contextual Info: ON Semiconductort MMBD2835LT1 MMBD2836LT1 Monolithic Dual Switching Diodes 3 MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage MMBD2835LT1 MMBD2836LT1 Forward Current 1 Symbol Value Unit VR 35 75 Vdc IF 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itch in g D iodes MMBD2835LT1 MMBD2836LT1 CATHODE ANODE 3 o- - » -N - O 1 —O 2 % CATHODE 2 C A S E 318-08, S T Y L E 12 S O T - 23 T O -2 3 6 A B M A XIM U M R AT IN G S (EACH DIODE) Rating Reverse Voltage

MMBD2835LT1

Abstract: MMBD2836LT1
Contextual Info: MOTOROLA Order this document by MMBD2835LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 3 1 2 CATHODE 2 CASE 318 – 08, STYLE 12 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol

MF sot-23

Abstract: sot-23 marking a2x MMBD2835LT1G MMBD2836LT1 MMBD2836LT1G MMBD2835LT1 SOT-23 code marking mf marking a2x sot23 Diode A3X
Contextual Info: MMBD2835LT1, MMBD2836LT1 Monolithic Dual Switching Diodes Features • Pb−Free Packages are Available MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage MMBD2835LT1 MMBD2836LT1 Forward Current Symbol Value Unit VR 35 75 Vdc IF 100 mAdc PD 225 mW 1.8 mW/°C

SMMBD2835LT1G

Contextual Info: MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

onsemi 035 diode

Abstract: MMBD2835LT1 MMBD2835LT1G MMBD2836LT1 MMBD2836LT1G DIODE SOT-23 PACKAGE
Contextual Info: MMBD2835LT1, MMBD2836LT1 Monolithic Dual Switching Diodes Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage MMBD2835LT1 MMBD2836LT1 Forward Current Symbol Value Unit VR 35 75 Vdc IF 100 mAdc

MMBD2835LT1G

Abstract: MMBD2836LT1G
Contextual Info: MMBD2835LT1G, MMBD2836LT1G Monolithic Dual Switching Diodes Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage MMBD2835LT1G MMBD2836LT1G Forward Current

MMBD2835LT1

Abstract: MMBD2836LT1
Contextual Info: MMBD2835LT1 / MMBD2836LT1 Monolithic Dual Switching Diodes Cathode Anode 1 3 2 Cathode SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Reverse Voltage Symbol Value Unit MMBD2835LT1 VR 35 Vdc MMBD2836LT1 VR 75 Vdc IF 100 mAdc PD 225 mW 1.8 mW/ C

20k variable resistor

Abstract: MMBD2835LT1 MMBD2836LT1 dual diode anode-cathode
Contextual Info: MMBD2836LT1 MONOL LTHIC DUAL SWITCHING DIODE SOT-23 A 3 L ANODE-CATHODE 3 3 1 B 1 2 2 ANODE 1 J K S C 2 CATHODE V G D H o Absolute Maximum Ratings Ta=25 C Characteristic Symbol Rating Unit Reverse Voltage V(BR) 75 Vdc Forward Current IF 100 nAdc 225 PF mW/ C

SOT-23 marking SW

Contextual Info: MOTOROlLA Order this document by m m bd 283slti/d SEMICONDUCTOR TECHNICAL DATA M onolithic Dual Sw itching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE ANODE 3 % -N — ° 1 N ° 2 CATHODE 2 CASE 3 1 8-08, STYLE 12 SOT-23 TO-236AB MAXIMUM RATINGS (EACH DIODE)

dual diode anode-cathode

Abstract: MMBD2835LT1 MMBD2836LT1 MMBD2837LT1 MMBD2838LT1 MARKING C25 SOT23
Contextual Info: MMBD2836LT1 MONOL LTHIC DUAL SWITCHING DIODE SOT-23 3 3 1 ANODE-CATHODE 1 2 ANODE CATHODE 2 Absolute Maximum Ratings Characteristic o Ta=25 C Symbol Rating Unit Reverse Voltage V(BR) 75 Vdc Forward Current IF 100 nAdc 225 PF mW/ C Total Device Dissipation FR-5

Contextual Info: Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 MAXIMUM RATINGS Rating Reverse Voltage MMBD2835LT1 Symbol VR Value Unit Vdc IF 35 75 100 mAdc Symbol PD Max 225 Unit mW R θ JA PD 1.8 556 300 mW/°C °C/W mW R θ JA

MMBD2835LT1

Abstract: MMBD2836LT1
Contextual Info: MMBD2835LT1 / MMBD2836LT1 Monolithic Dual Switching Diodes Cathode Anode 1 3 2 Cathode SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Reverse Voltage Symbol Value Unit MMBD2835LT1 VR 35 Vdc MMBD2836LT1 VR 75 Vdc IF 100 mAdc PD 225 mW 1.8 mW/ C

resistor G202

Abstract: Diode A3X MMBD2835LT1 MMBD2836LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 MAXIMUM RATINGS Rating Reverse Voltage MMBD2835LT1 Symbol VR Value Unit Vdc IF 35 75 100 mAdc Symbol PD Max 225 Unit mW R θ JA PD 1.8 556

Contextual Info: MMBD2835LT1G, MMBD2836LT1G, SMMBD2835LT1G Monolithic Dual Switching Diodes http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique  Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

M1MA151KT

Contextual Info: Switching Diodes General−Purpose Signal and Switching Diodes Device BAS21LT1 BAS21SLT1 MMBD914LT1 BAS16LT1 MMBD6050LT1 BAL99LT1 BAS116LT1 MMBD7000LT1 MMBD2836LT1 MMBD2838LT1 BAV70LT1 BAV99LT1 BAW56LT1 MMBD6100LT1 BAV74LT1 MMBD2835LT1 MMBD2837LT1 BAV199LT1

diode RA 225 R

Contextual Info: MAXIMUM RATINGS Rating Reverse Voltage Symbol Value Unit Vr 75 35 Vdc if 100 m Adc MMBD2836LT1 MMBD2835LT1 Forward C urrent MMBD2835LT1 MMBD2836LT1 CASE 318-07, STYLE 12 SOT-23 TO-236AB THERMAL CHARACTERISTICS Characteristic Sym bol Max Unit pd 225 mW 1.8

IR3575

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 CASE 318 – 08, STYLE 12 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit VR 35 75 Vdc IF 100 mAdc

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11