X-GOLD 208 INFINEON Search Results

c102 TRANSISTOR

Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

TL225

Abstract: ATC100A6R2CW150X
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

TRANSISTOR C802

Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

TRANSISTOR C802

Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104
Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS

capacitor marking c106

Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

c102 TRANSISTOR

Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113
Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200

PT740 AB

Abstract: 095G Unitechno rfpak fuji semiconductors manual 652B0082211-002 ADE-410-001J BP-108 EDR7315 QP4-064050-002-A
Contextual Info: Hitachi Semiconductor Package Data Book ADE-410-001J 11th Edition March/2002 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher

pc2700s-2533-0-a1

Abstract: PC2700S-2533 PC2700-2533 PC2100S-2033 pc27002533
Contextual Info: Data Sheet, Rev. 0.5, Dec. 2003 HYS64D64020HDL-5-B HYS64D64020HDL-6-B 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM Green Product Memory Products N e v e r s t o p t h i n k i n g . Edition 2003-12 Published by Infineon Technologies AG,

WD2RE512X809

Abstract: WD2RE01GX809 JEDEC DDR2-400
Contextual Info: DDR2-400, 533,667 One Rank, x8 Registered SDRAM DIMM Pb-free 256MB 512MB 1GB 2GB - WD2RE256X809 WD2RE512X809 WD2RE01GX809 WD2RE02GH809 Stacked, Preliminary* Features: • • • • • • • • • • • • • Figure 1: Available profiles 240-pin Registered ECC DDR2 SDRAM Dual-In-Line

Contextual Info: White Electronic Designs WV3HG64M64EEU-D6 ADVANCED* 512MB – 64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2

Contextual Info: White Electronic Designs WV3HG64M64EEU-D6 ADVANCED* 512MB – 64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2

Contextual Info: White Electronic Designs WV3HG64M64EEU-D6 ADVANCED* 512MB – 64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2

Contextual Info: White Electronic Designs WV3HG264M72EEU-D6 ADVANCED* 1GB – 2x64Mx72 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module DIMM „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2

Contextual Info: White Electronic Designs WV3HG264M72EEU-D6 ADVANCED* 1GB – 2x64Mx72 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module DIMM „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2

c102 TRANSISTOR

Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

Contextual Info: White Electronic Designs WV3HG264M64EEU-D6 ADVANCED* 1GB – 2x64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2

c102 TRANSISTOR

Abstract: tl113 c103 TRANSISTOR TRANSISTOR c104 NFM18PS105R0J3 c103 TRANSISTOR equivalent c104 TRANSISTOR PTFA220041M TL108 tl111
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

Contextual Info: White Electronic Designs WV3HG264M64EEU-D6 ADVANCED* 1GB – 2x64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2

PC2-3200

Abstract: PC2-5300 PC2-6400 WV3HG264M64EEU-D6
Contextual Info: White Electronic Designs WV3HG264M64EEU-D6 ADVANCED* 1GB – 2x64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ 240-pin, dual in-line memory module „ Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 „ Utilizes 800*, 667*, 533 and 400 MT/s DDR2

JEDEC DDR2-400

Abstract: DDR2 sdram pcb layout Wintec dram micron DDR2 pcb layout ddr2-533 MICRON Wintec Industries dm 1265 r sdram pcb layout guide
Contextual Info: DDR2-400, 533 Single Rank, x8 Registered SDRAM DIMMs 256MB 512MB 1GB 2GB - W1D32M72R8 W1D64M72R8 W1D128M72R8 W1D256M72R8 Preliminary* Features: • • • • • • • • • • • • Figure 1: Available layouts 240-pin Registered ECC DDR2 SDRAM Dual-InLine Memory Module for DDR2-400 and DDR2-533

DDR400B

Abstract: HYS64D64020GDL PC2700 PC3200 DDR333 DDR333B DDR400
Contextual Info: D a t a S h e e t , R e v . 1 . 1 , M ay . 2 00 4 HYS64D64020[H/G]DL–5–B HYS64D64020[H/G]DL–6–B 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . Edition 2004-05 Published by Infineon Technologies AG,

PC2700S-25330

Contextual Info: Data Sheet, Rev. 1.2, Jul. 2004 HYS64D64020[H/G]DL–5–B HYS64D64020[H/G]DL–6–B 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-07 Published by Infineon Technologies AG,

transistor c735

Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103
Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency

HYS64D32000GU-7-B

Abstract: HYS64D32000GU-7-A HYS64D64020GU-7-A HYS64D32000GU-7 HYS64D64020GU-7 HYS72D64020GU-7-B HYS72D32000GU-7-A
Contextual Info: HYS64/72D32000/64020GU Unbuffered DDR-I SDRAM-Modules 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules 256 MByte & 512 MByte Modules PC1600 & PC2100 • 184-pin Unbuffered 8-Byte Dual-In-Line DDR-I SDRAM non-parity and ECC-Modules for PC and Server main memory applications