X-BAND GAN HEMT Search Results

Contextual Info: SGK0910-60A-R X-Band Internally Matched GaN-HEMT FEATURES  High Output Power: P5dB=48.0dBm Typ.  High Gain: GL=12.0dB (Typ.)  High PAE: add=35% (Typ.)  Broad Band: 9.2 to 10.0GHz  Impedance Matched Zin/Zout = 50ohm  Hermetically Sealed Package

SGK0910-120A-R

Contextual Info: SGK0910-120A-R X-Band Internally Matched GaN-HEMT FEATURES  High Output Power: P5dB=51.0dBm Typ.  High Gain: GL=11.5dB (Typ.)  High PAE: add=35% (Typ.)  Broad Band: 9.2 to 10.0GHz  Impedance Matched Zin/Zout = 50ohm  Hermetically Sealed Package

Contextual Info: SGK0910-30A-R X-Band Internally Matched GaN-HEMT FEATURES  High Output Power: P5dB=45.0dBm Typ.  High Gain: GL=12.0dB (Typ.)  High PAE: add=35% (Typ.)  Broad Band: 9.2 to 10.0GHz  Impedance Matched Zin/Zout = 50ohm  Hermetically Sealed Package

GaN amplifier

Abstract: GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPT25100 NPTB00050 high power fet amplifier schematic an-013 nitronex Amplifier Research rf power amplifier schematic broadband impedance transformation
Contextual Info: APPLICATION NOTE AN-013 GaN Essentials AN-013: Broadband Performance of GaN HEMTs NITRONEX CORPORATION 1 MAY 2009 APPLICATION NOTE AN-013 GaN Essentials: Broadband Performance of GaN HEMTs 1. Table of Contents 1. TABLE OF CONTENTS. 2

CGH40025P

Abstract: CGH40010P cgh60015 GaN ADS Gan hemt transistor x band cgh40120F cgh40045f CGH60015D CGH60060D CGH60030D cgh60120D
Contextual Info: General Purpose Wide Bandgap Transistors Gallium Nitride GaN HEMTs for Broadband Applications Broadband performance - Enables high power, multi-octave bandwidth amplifiers This “general purpose” discrete device series features Cree’s GaN HEMTs. These unmatched packaged transistors

CGH09120F

Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
Contextual Info: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR

High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic
Contextual Info: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level

Contextual Info: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features  Broadband Operation 30MHz to 6000MHz  Advanced GaN HEMT Technology  2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB

"RF Switch"

Abstract: rf switch RFMD HEMT GaN SiC SiC BJT RFSW2100D GaN BJT
Contextual Info: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features  Broadband Operation 30MHz to 6000MHz  Advanced GaN HEMT Technology  2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB

Contextual Info: RFSW2100 45W GaN-onSiC Reflective SPDT RF Switch RFSW2100 Proposed 45W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Package: QFN, 12-Pin, 3mm x 3mm Features  Broadband Operation 30MHz to 6GHz  Advanced GaN HEMT Technology  2GHz Typical Performance  Insertion Loss <0.4dB

Contextual Info: MICROWAVE POWER GaN HEMT TGI1314-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 8.0dB at 13.75GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=37.0dBm Single Carrier Level

transistor C1096

Abstract: transistor C2271 c2271 transistor TRANSISTOR C1555 GaN ADS Gan hemt transistor x band c1096 CGH40010F CuMoCu GaAs HEMTs X band
Contextual Info: WMC: Challenges in Model-Based HPA Design Application of Non-Linear Models in a range of challenging GaN HEMT Power Amplifier Designs Ray Pengelly, Brad Millon, Don Farrell, Bill Pribble and Simon Wood Cree Inc., Research Triangle Park, NC 27709 Outline • Attributes of GaN HEMTs

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

Contextual Info: MICROWAVE POWER GaN HEMT TGI0910-50 FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 41.0dBm ･HIGH GAIN GL= 9.0dB at 9.5GHz to 10.5GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Ta= 25C

TGI8596-50

Contextual Info: MICROWAVE POWER GaN HEMT TGI8596-50 FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 41.0dBm ･HIGH GAIN GL= 9.0dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Ta= 25C

GaAs HEMTs X band

Abstract: X-band Gan Hemt 0.18um AlGaN/GaN HEMTs x-band mmic lna alcon X-band diode gp 421 LNA x-band
Contextual Info: High Linearity, Robust, AlGaN-GaN HEMTs for LNA & Receiver ICs P. Parikh, Y. Wu, M. Moore, P. Chavarkar, U. Mishra, Cree Lighting Company, 340 Storke Road, Goleta, CA 93117. R. Neidhard, L. Kehias, T. Jenkins, Air Force Research Laboratory, Sensors Directorate, WPAFB, OH 45433.

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 40.0dBm ･HIGH GAIN GL= 11.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 40dBc at Po=32.0dBm Single Carrier Level

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 12.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 40dBc at Po=29.0dBm Single Carrier Level

Contextual Info: MICROWAVE POWER GaN HEMT TGI5867-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = -40dBc at Po=29.0dBm Single Carrier Level

Contextual Info: MICROWAVE POWER GaN HEMT TGI5867-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = -40dBc at Po=32.0dBm Single Carrier Level

Contextual Info: MICROWAVE POWER GaN HEMT TGI7785-25L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 44.5dBm at Pin= 35.0dBm ･HIGH GAIN GL= 12.0dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3 Min. = 40dBc at Po=29.0dBm Single Carrier Level

Contextual Info: MICROWAVE POWER GaN HEMT TGI5964-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 43.0dBm ･HIGH GAIN GL= 13.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3 Min. = 25dBc at Po=44.0dBm Single Carrier Level