RFSW2100 Search Results
RFSW2100 Datasheets Context Search
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Contextual Info: RFSW2100 45W GaN-onSiC Reflective SPDT RF Switch RFSW2100 Proposed 45W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Package: QFN, 12-Pin, 3mm x 3mm Features Broadband Operation 30MHz to 6GHz Advanced GaN HEMT Technology 2GHz Typical Performance Insertion Loss <0.4dB |
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rfsw210012-pin30mhzds120614 | |
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Contextual Info: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features Broadband Operation 30MHz to 6000MHz Advanced GaN HEMT Technology 2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB |
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rfsw2100d30mhz6000mhzds120620 | |
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Contextual Info: RFSW2100D RFSW2100D 55W GaN-on-SiC Reflective SPDT RF Switch The RFSW2100D is a GaN-on-SiC high power discrete RF switch designed for military and commercial wireless infrastructure, industrial/scientific/medical and general purpose broadband RF control and switching applications. Using an advanced high power |
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rfsw2100d30mhzds131029 | |
"RF Switch"
Abstract: rf switch RFMD HEMT GaN SiC SiC BJT RFSW2100D GaN BJT
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rfsw2100d30mhz6000mhzds120620+4 | |
Integrated Synthesizers with Mixers
Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
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11f-bintegrated synthesizers with mixersdigital step attenuators3g/4g power amplifiers+7 | |
SW2100D
Abstract: RFSW2100D ds1303
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2100drfsw2100dds130314sw2100d+1 |