X-BAND AMPLIFIER Search Results

Gunn Diode

Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
Contextual Info: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER

CPI Helix tube

Abstract: WRD-650 90 KW blower VTX6389L3 MIMIC control panel MKT-202
Contextual Info: CPI 1.0kW X-Band TWT Amplifier for Instrumentation Applications X- Band The VZX-2783C1 x-Band 1.0 kW TWT High Power Amplifier features high efficiency and power for EMC/EMI testing. Safety Provides 1000 watts of power in the 8.0 to 12.75 GHz frequency band in a compact 19inch rack-mount dual drawer configuration for

Medium Power Amplifiers

Contextual Info: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input

miteq amf

Abstract: Medium Power Amplifiers x-band power amplifier power amplifiers
Contextual Info: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input

C10535E

Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58
Contextual Info: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package

Contextual Info: X-Band Hub-mount SSPB 300W to 500W SSPB-3000XTM series Features •             Converts synthesized L-Band to X-Band Integrated amplifier with an output power of 250W to 500W Phase-locked oscillator to external 10MHz reference

AM7808CLT

Contextual Info: AM7808 AM7808HighEfficiency Quad-Band Tx Dual-Band Rx GSM/GPRS CMOS Tx Module High-Efficiency Quad-Band Tx Dual-Band Rx GSM/GPRS CMOS Tx Module Package: LGA, 5.25mm x 5.30mm x 0.80mm RX1 TM AdaptiveRF HB_IN Features  ANT Extended Power Added Efficiency

Contextual Info: WffllGECPLESSEY DS3792-1.2 DA1664 X BAND SINGLE SIDE BAND RECEIVER The DA1664 is an X Band microwave single sideband mixer with integral IF amplifier. It provides single sideband reception accepting signals below the LO frequency over the frequency range 9.4 - 9.9GHz with an IF of 15MHz. The unit is

WR284* ISOLATOR

Abstract: MS3116E-10-6S WR340 flange dimensions
Contextual Info: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS

Contextual Info: 16W / 20W / 25W X-Band Block Up Converter GaN Technology 16W / 20W / 25W GaN-based X-Band BUC SSPBg-210XTM series Designed to meet MIL-STD-188-164A Features •       Up-converts an L-Band input frequency 950 – 1450 MHz to the X-Band frequency of 7.9 – 8.4 GHz

amplifier 400W

Abstract: 400w amplifier miteq twt
Contextual Info: MT3400H ANTENNA MOUNT TRAVELING WAVE TUBE MEDIUM POWER AMPLIFIER C-BAND: X-BAND: Ku-BAND: DBS-BAND: 400W 400W 400W 270W MT3400H FEATURES: Operational Temperature of 60°C Weather Resistant Antenna Mount TWT Amplifier Typical Phase Noise 10 dB Below IESS-308

solid state amplifier

Abstract: operation of class c amplifier
Contextual Info: Solid State Power Amplifier High Power, Broadband, X Band Solid State RF Amplifier Aethercomm P/N SSPA 8.6-9.5-10 is a high power X • Operation from 8.6 to 9.5 GHz Minimum band solid state power amplifier that operates from • 15 Watts Typical Output Power Across Band @ 25 C

Contextual Info: X-Band Hub-mount SSPB 16W to 250W SSPB-2000XTM series Features •             Converts L-Band signal to X-Band frequency Integrated amplifier with an output power from 16W to 250W Phase-locked oscillator to external 10MHz reference

CHA5012

Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

99-F

Abstract: CHA5012-99F CHA5012
Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

SN63

Abstract: TGA8658-SG 14GHZ GAAS
Contextual Info: Product Data Sheet August 5, 2008 Ku Band 2W Packaged Amplifier TGA8658-SG Key Features • • • • • • • • • Package Dimensions 6.4 x 6.4 x 3.0 mm Frequency Range: 13-17 GHz Optimized for VSAT band 13.75-14.5GHz 33 dB Nominal Gain Typical > 33.5 dBm Psat in VSAT band @ 7V

Contextual Info: Optiva OTS-2: X-Band RF Fiber Optic Transport System DATASHEET | JUNE 2013 SATCOM X-Band RF Fiber Optic Transport System The Optiva OTS-2 X-Band transmitter and receiver are ideal to construct 7.000 to 10.000 GHz transparent fiber optic links for antenna remoting, electronic warfare systems, broadband delay

Contextual Info: TGA4517 Ka Band Power Amplifier Key Features • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat @ Mid-band 20 dB Nominal Gain @ Mid-band 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm

ka band power amplifier

Abstract: TGA4517 ka band power mmic
Contextual Info: TGA4517 Ka Band Power Amplifier Key Features • • • • • • • Frequency Range: 31 - 37 GHz 35 dBm Nominal Psat @ Mid-band 20 dB Nominal Gain @ Mid-band 12 dB Nominal Return Loss Bias 5-6 V, 2 A Quiescent 0.15 um 3MI pHEMT Technology Chip Dimensions 4.35 x 3.90 x 0.05 mm

Contextual Info: united monolithic semiconductors CHA7114 RoHS COMPLIANT X Band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7114 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a UMS

cha7215

Abstract: x-Band High Power Amplifier
Contextual Info: CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description VG1R VD1 VG2R ● ● The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power

X-band Gan Hemt

Abstract: 84-1 CONDUCTIVE EPOXY MIL-HDBK-263 84-1 LMIT x-Band Hemt Amplifier
Contextual Info: FMA3015 FMA3015 X-BAND 7.5W HIGH POWER AMPLIFIER GAAS MMIC Package Style: Bare Die Product Description Features The FMA3015 is a high performance X-Band Gallium Arsenide monolithic amplifier. It is suitable for use in communication, instrumentation and electronic warfare

CHA7010

Abstract: x-Band High Power Amplifier
Contextual Info: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP

x-Band High Power Amplifier

Abstract: 10Ghz RF Power 10w amplifier CHA7010
Contextual Info: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP