14GHZ GAAS Search Results

Contextual Info: RFRX1001 RFRX1002 9GHz to 14GHz GaAs MMIC RFRX1002 Proposed 9GHz TO 14GHz GaAs MMIC IQ DOWN-CONVERTER Package: QFN, 32-Pin, 5mmx5mmx0.95mm Features  RF Frequency=9GHz to 14GHz  LO Frequency=5GHz to 18GHz  IF Frequency=DC to 4GHz  Conversion Gain=14dB

LNA 9GHz

Contextual Info: RFRX1002 RFRX1002 9GHz to 14GHz GaAs MMIC 9GHz TO 14GHz GaAs MMIC IQ DOWNCONVERTER Package: QFN, 32-Pin, 5mmx5mmx0.95mm GND LOIN GND N/C Vd1 N/C 32 Features 31 30 29 28 27 N/C N/C 26 25 N/C 1 24 Vd1 IF1 2 23 GND  RF Frequency: 9GHz to 14GHz GND 3  LO Frequency: 5GHz to 18GHz

LNA 9GHz

Contextual Info: RFRX1002 RFRX1002 GaAs MMIC IQ Downconverter 9GHz to 14GHz RFMD's RFRX1002 is a 9GHz to 14GHz GaAs pHEMT Downconverter, incorporating an integrated LNA, image rejection mixer, LO buffer amplifier, and DC decoupling capacitors. The combination of high performance and

RFUV1002

Abstract: 10GHz RF mixer rfmd qfn package 14GHZ GAAS
Contextual Info: RFUV1002 RFUV1002 9GHz TO 14GHz GaAs MMIC IQ UP-CONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features         RF Frequency, 9GHz to 14GHz IF Frequency, DC to 4GHz Maximum Conversion Gain, 23dB Minimum Conversion Gain,

KGL4117H

Abstract: K4117 k411
Contextual Info: October 1, 2008 Electronic Components KGL4117H ODHKGL4117H-06 14GHz Broadband Amplifier IC FEATURES • Broadband Amplifier: 14GHz FUNCTION DIAGRAM In Out Inb Outb Vb1 Vb2 Vs1 Vs2 ABSOLUTE MAXIMUM RATINGS Ta=25C Parameters Symbol Min. Max. Unit Vs -5.7

Contextual Info: RFUV1002 RFUV1002 9GHz TO 14GHz GaAs MMIC IQ UP-CONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features         RF Frequency, 9GHz to 14GHz IF Frequency, DC to 4GHz Maximum Conversion Gain, 23dB Minimum Conversion Gain,

Contextual Info: October 1, 2008 Electronic Components KGL4117H ODHKGL4117H-06 14GHz Broadband Amplifier IC FEATURES • Broadband Amplifier: 14GHz FUNCTION DIAGRAM In Out Inb Outb Vb1 Vb2 Vs1 Vs2 ABSOLUTE MAXIMUM RATINGS Ta=25°C Parameters Symbol Min. Max. Unit Vs -5.7

Contextual Info: RFRX1002 RFRX1002 9GHz to 14GHz GaAs MMIC 9GHz TO 14GHz GaAs MMIC IQ DOWNCONVERTER Package: QFN, 32-Pin, 5mmx5mmx0.95mm GND LOIN GND N/C Vd1 N/C 32 Features LO Frequency: 5GHz to 18GHz N/C 4  Conversion Gain: 14dB  Noise Figure: 1.7dB  IIP3: 4dBm

Contextual Info: CHT4016-QEG 4-14GHz 6-bit digital attenuator GaAs Monolithic Microwave IC in SMD leadless package Description The CHT4016-QEG is a 4-14GHz 6-bit digital attenuator designed to address a dynamic of 31.5dB by 0.5dB step. It is designed for a wide range of applications, from military to commercial

Contextual Info: ODHKGL4117H-04 Electronic Components KGL4117H Issue Date: Sep. 12, 2003 14GHz Broadband Amplifier IC FEATURES • Broadband Amplifier: 14GHz FUNCTION DIAGRAM In Out Inb Outb Vb1 Vb2 Vs1 Vs2 ABSOLUTE MAXIMUM RATINGS Ta=25°C Parameters Supply Voltage Input (or Input-bar) Termination and Bias

ultrasonic radar

Abstract: ultrasonic bond diagram radar circuit ultrasonic amplifier circuit diagram LMA411 ultrasonic phased array bonding
Contextual Info: 8.5-14GHz PHEMT Amplifier Filtronic LMA411 Solid State Features • • • • • • • • • • 2dB Typical Noise Figure 18dB Typical Gain 19dBm Saturated Output Power 12dB Input/Output Return Loss Typical 8.5-14GHz Frequency Bandwidth +6 Volts Single Bias Supply

Contextual Info: CHA1014 RoHS COMPLIANT 7-14GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1014 is a monolithic two-stage wide band low noise amplifier designed for a wide range of applications. The circuit is manufactured with a standard pHEMT process 0.25µm gate length, via

CHA1014

Contextual Info: CHA1014 RoHS COMPLIANT 7-14GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1014 is a monolithic two-stage wide band low noise amplifier designed for a wide range of applications. The circuit is manufactured with a standard pHEMT process 0.25µm gate length, via

CHA1014-99F

Abstract: CHA1014
Contextual Info: CHA1014 RoHS COMPLIANT 7-14GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1014 is a monolithic two-stage wide band low noise amplifier designed for a wide range of applications. The circuit is manufactured with a standard pHEMT process 0.25µm gate length, via

Contextual Info: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V

KGL4225D

Abstract: 6 KGL G1027 14-Gbps
Contextual Info: Target Specification Preliminary Electronic Components KGL4225D 14-Gbps 1:16 MUX . 1. DESCRIPTION KGL 4225D converts 16bit parallel data into one data stream operating over 14GHz clock frequency. The KGL 4225D is fabricated by OKI 0.18 µm gate length GaAs MESFETs process. By usin g of OKI unique

x-Band Hemt Amplifier

Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
Contextual Info: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V

KGL4226D

Abstract: 4226d DSA001626 334-G
Contextual Info: Target Specification Preliminary Electronic Components KGL4226D 14-Gbps 1:16 DEMUX 1. DESCRIPTION KGL 4226D converts one data stream into 16bit parallel data operating over 14GHz clock frequency. The KGL 4226D is fabricated by OKI 0.18µm gate length GaAs MESFETs process. By using of OKI unique flip-flops, which

FET LNA

Contextual Info: FEATURES - 12 14GHz • 1.15 dB Noise Figure JL MODEL NO. % X! DAML6188 ■ 28.5 dB Gain GaAs FET LNA ■ +27 dBm 3rd Order Intercept Point ■ Replaceable SMA Connectors PART IDENTIFICATION RF OUT - O RF IN ■ Ô - rb - ► I .38 rrsi "T d r «3 I Ô Ò

Contextual Info: Advance Product Datasheet June 7, 2001 DC-18GHz MPA with AGC TGA1328-EPU OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Dual Gate Technology DC - 14GHz small signal 3dB BW

TGA1328

Abstract: 6 9dg TGA1328EPU
Contextual Info: Advance Product Datasheet January 18. 2001 DC-18GHz MPA with AGC TGA1328-EPU OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Dual Gate Technology DC - 14GHz small signal 3dB BW

Contextual Info: Product Data Sheet March 19, 2001 DC-18GHz MPA with AGC TGA1328-SCC OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • 0.5um pHEMT Technology DC - 14GHz Linear Bandwidth DC -18GHz Saturated Power BW

DC TO 18GHZ RF AMPLIFIER MMIC

Abstract: 6 9dg OC192
Contextual Info: Advance Product Datasheet July 30, 2001 DC-18GHz MPA with AGC TGA1328-EPU OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Dual Gate Technology DC - 14GHz small signal 3dB BW

DC-10

Abstract: OC192 TGA1328-SCC TGA8652-EPU
Contextual Info: Product Data Sheet March 19, 2002 DC-18GHz MPA with AGC TGA1328-SCC OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • 0.5um pHEMT Technology DC - 14GHz Linear Bandwidth DC -18GHz Saturated Power BW