WRITE PROGRAMM CYCLE Search Results

bc 331

Abstract: siemens sda
Contextual Info: S IE M E N S Nonvolatile Memory 2-Kbit E2PROM with l 2C Bus and 2 K Write Protection SDA 3526-5 Preliminary Data M O S IC Features • • • • • • • • • • W ord-organized programm able nonvolatile memory in n-channel floating-gate technology E 2PROM

Contextual Info: FEATURES D E S C R IP T IO N • True 125MHz retrigger rate Synergy's SY605 is an ECL-compatible tim ing vernier delay generator whose tim e delay is programm ed via an 8bit code which is loaded via an independent "WRITE" input. The SY605 is fabricated in Synergy's proprietary ASSET

28F256 CMOS FLASH

Contextual Info: SGS-THOMSON M28F256 1ILG 256K 32 x 8 CMOS FLASH MEMORY ADVANCE DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 jus. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.

M28F101

Abstract: PDIP32 PLCC32
Contextual Info: SGS-THOMSON ^ 7 # M28F101 M g ^ ( 5 i[L i( g T M 5 M ( g S CMOS 1 Megabit (128K x 8) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIM E: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE

M28F256A

Abstract: M28F256 PDIP32 PLCC32
Contextual Info: ¿ = 7 S C S -TH O M S O N “ 7 # M28F256 ^ D lE S Œ tIl(g ¥ ^ (s )iD © i CMOS 256K (32K x 8) FLASH MEMORY • FAST ACC ESS TIME: 100ns ■ 1,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMM ING TIME 100ns (PRESTO F PROGRAMMING)

Contextual Info: SGS-THOMSON ^ 7 # M28F101 M g ^ ( 5 i[L i( g T M 5 M ( g S CMOS 1 Megabit (128K x 8) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIM E: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE

Contextual Info: FZ7 ^ 7 # S G S -T H O M S O N M É M S i( £ M M M28F256A O ( g § CMOS 256K (32K x 8 FLASH MEMORY • FAST ACC ESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIM E 10ns

28F010T

Abstract: 28F010
Contextual Info: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp

Z8410APS

Abstract: Z80-DMA Z8410A-PS Z80ADMA Z8410PS Z80A dma z80dma 5233j tda 2032 Z8410C
Contextual Info: ZILOC INC ~72 DeT| TT040M3-.ÛOQSa-17 T-52-33-j Z 8410 Z80 DMA Direct Memory Access Controller iy i I AAr fe iU v /y Product Specification A p r il 1985 • Transfers, searches, and search/transfers in Byte-at-aTime, Burst, or Continuous modes. Cycle length and

Contextual Info: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 \iS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp

Contextual Info: Æ 7 SCS-THOMSON * 7 # K f ô m iO T ® ® M28F512 « CMOS 512K 64K x 8 FLASH MEMORY • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE ■ TYPICAL BYTE PROGRAMM ING TIM E 10ns

Contextual Info: SGS-THOMSON ¡y M28F1001 1024K 128 x 8 CMOS FLASH MEMORY A D V AN C E DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC­ OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 us. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.

Contextual Info: In te l 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

Contextual Info: / U T SGS-THOMSON *7 # M28F256 i]D g ® iL i© ir ® © [iO (g i CMOS 256K (32K x 8 FLASH MEMORY FAST ACCESS TIME: 100ns 1,000 ERASE/PROGRAM CYCLES 12V PROGRAMM ING VOLTAGE TYPICAL BYTE PROGRAMM ING TIM E 100us (PRESTO F PROGRAMMING) ELECTRICAL CHIP ERASE IN 1s RANGE

Contextual Info: r= 7 M 28F101B M 28V101B S G S -T H O M S O N CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ADVANCE DATA • FAST ACCESS TIMES - 60ns fo r M 28F101B version - 150ns for M 28V101 B version ■ LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 PROGRAM/ERASE CYCLES

TN28F010

Contextual Info: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

Contextual Info: CMOS SUPERSYNC FIFO 16,384 x 9, 32,768 X 9 IDT72261 IDT72271 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • • • 16,384 x 9-bit storage capacity IDT72261 32,768 x 9-bit storage capacity (IDT72271) 10ns read/write cycle tim e (8ns access time)

tda 1006

Abstract: T1006T tda vertical IC tv crt z8410 z84c10 ASZ80
Contextual Info: P r o d u c t S p e c if ic a t io n Z8410/Z84C10 NMOS/CMOS Z80 DMA Direct Memory Access Controller FEATURES • Transfers, searches, and search/transfers in Byte-at-aTime, Burst, or Continuous modes. Cycle length and edge timing can be programm ed to match the speed of

28FS12

Abstract: 51212
Contextual Info: in t e i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 ju.s Typical Byte-Program — 1 Second Chlp-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read

Contextual Info: PR ELIM INA R Y IN FO R M A TIO N 64K Military X2864HM 8 19 2x 8 Bit Electrically Erasable PROM TYPICAL FEATURES • 90 ns Access Time • High Performance Scaled NMOS Technology • Fast Write Cycle Times —32-Byte Page Write Operation —Byte or Page Write Cycle: 3 ms Typical

Contextual Info: i&Br FACT SHEET 1M Commercial X28C010 128Kx8B it Electrically Erasable PROM FEATURES • 200 ns Access Time • LOW Power CMOS —80 mA Active Current Typical — 500 juA Standby Current Typical • Fast Write Cycle Times — 128-Byte Page Write Operation

Contextual Info: Advanced Micro Devices Am4601 Programmable-Flags, 512 x 9 FIFO DISTINCTIVE CHARACTERISTICS • 512x9 RAM-based FIFO ■ 25 and 35 ns access times ■ ■ Two fixed flags; full and empty Two programmable flags; programmable from 1 to 511 ■ ■ Programmable polarity for all four flags

Contextual Info: Advanced Micro Devices Am4601 Programmable-Flags, 512 x 9 FIFO DISTINCTIVE CHARACTERISTICS • 512 x 9 RAM-based FIFO ■ 25 and 35 ns access times ■ Two fixed flags; full and empty ■ Two programmable flags; programmable from 1 to 511 ■ ■ Programmable polarity for all four flags

Contextual Info: CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 IDT72261 IDT72271 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • • • • • • • 16,384 x 9-bit storage capacity IDT72261 32,768 x 9-bit storage capacity (IDT72271) 10ns read/write cycle tim e (8ns access time)