D154FLBB Search Results
D154FLBB Datasheets Context Search
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Contextual Info: In te l 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read |
OCR Scan |
28f512er-20er-24rr-60+6 |