28FS12 Search Results

Contextual Info: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time

N28F512-150

Abstract: 26F512 intel PLD
Contextual Info: INTEL CORP MENORY/PLP/ irrte1 5bE I • 182i,l?t, D07fa233 D27 28F512 512K (64K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick-Pulse Programming Algorithm — 10 jLts Typical Byte-Program — 1 Second Chip-Program

TMS28F512A TEXAS INSTRUMENTS

Abstract: TMS28F512A
Contextual Info: TMS28F512A 524288-BIT FLASH MEMORY SMJS514B - FEBRUARY 1994 - REVISED MARCH 1996 Organization . . . 64K x 8-Bit Flash Memory All Inputs/Outputs TTL-Compatible Vcc Tolerance ±10% Maximum Access/Minimum Cycle Time 28F512A-10 100 ns ’28F512A-12 120 ns ’28F512A-15

intel Automotive

Abstract: AP28F512-120
Contextual Info: 512K 64K X 8 A28F512 CMOS FLASH MEMORY (Automotive) Extended Automotive Temperature Range: -40°C to + 125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 ¡is Typical Byte-Program — 1 Second Chip-Program

N28F512-200

Abstract: P28F512-200 28F512-150 29020 28f512-200
Contextual Info: intei 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program

Contextual Info: 28F512 512K 64K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycle Typical ■ 12.0V ±5% VPP

Contextual Info: 28F512 512K 64K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 )j.s Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycle Typical ■ 12.0V ±5% VPP

28FS12

Contextual Info: a Am28F512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 pA maximum standby current

AP28F512-120

Abstract: AP28F512 AN28F512-120 28F512 AP28F512-150 AN28F512 INTEL FLASH AP-316 ap-325 intel 28f512 irs2092
Contextual Info: In te l A28F512 512K 64K x 8 CMOS FLASH MEMORY (Automotive) • Extended Autom otive Tem perature Range: - ¥ T C to + 12S*C ■ Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Qulck-Pulse Programming Algorithm — 10 n9 Typical Byte-Program

28FS12

Abstract: 51212
Contextual Info: in t e i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 ju.s Typical Byte-Program — 1 Second Chlp-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read

D28F512-120P1C4

Abstract: d28f512 N28F512-120P1C4 28F512-150P1C4 N28F512-150P1C4 N28F512-200P1C4 29020 N28F512-200
Contextual Info: INTE L CORP intel • M EM OR Y/ LO GI C SOE D ■ H&2bl 7h Q0b72fl2 S ■ V -^ -/5 -2 7 28F512 512K (64K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 iia Typical Byte-Program