Q0B75 Search Results

Contextual Info: 7 DRAWI NG MADE THIS IN THIRD DRAWING ANGLE 6 4 5 2 3 PROJECTIO N 15 U N P U B L I 5 H E D COPYRIGHT 19 RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI S T LOC 19 35 AR RESERVED. REV I 5 I0N5 ZONE LTR E POLYESTER, PHOSPHOR 0. 38 _im

Contextual Info: ¿ = 7 S G S -1 H 0 M S 0 N Ä T /, L4974A M lâ ^ lL Ilg T n M IO Ê i 3.5A SWITCHING REGULATOR . 3.5A OUTPUT CURRENT • 5.1 V TO 40V OUTPUT VOLTAGE RANGE ■ 0 TO 90% DUTY CYCLE RANGE ■ INTERNAL FEED-FORWARD LINE REG. ■ INTERNAL CURRENT LIMITING . PRECISE 5.1 V ± 2% ON CHIP REFERENCE

Contextual Info: 7 DRAWING THIS MADE IN DRAWING THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 6 5 <3> PROJECTION R E L E A SE D 19 BY 13.18+0.25 [ . 51 9 ± . 0 1 0 ] MOUNTING HEIGHT AMP FOR P U B L I C A T I O N INCORPORATED. ALL 3 4 2 INTERNATIONAL RIGHTS AJ P O L Y E S T E R PBT PER M I U - H - 2 4 5 1 9 ,

ZO 607 MA 7A 523

Abstract: cmo 765 transistor zo 607 MA 7S ZO 607 MA 7A 524 CM 1241 siemens Ka2 transistor BFQ 270 ZO 607 transistor BFQ82 Q62702-F1189
Contextual Info: SIEMENS NPN Silicon RF Transistor B F Q 82 • For low-noise, high-gain amplifiers up to 2 GHz. • Linear broadband applications at collector currents up to 40 mA. • Hermetically sealed ceramic package. • /t = 8 GHz F = 1.1 dB at 800 MHz ESD : Electrostatic discharge sensitive device, observe handling precautions!

transistor zo 607 MA 7S

Abstract: zo 607 MA 7S zo 607 MA 7s 524 ZO 607 MA 7A zo 607 MA 7A 435 ZO 607 MA 7A 523 ZO 607 MA 7A 524 BFQ181 zo 607 MA 7A 437 cerec
Contextual Info: SIEMENS NPN Silicon RF Transistor BFQ181 Preliminary Data • For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. • / t = 8 GHz F = 1.3 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

1-746288-0

Contextual Info: DRAWING THIS D MADE IN D RAWING COPYRIGHT RESERVED. AMP THIRD IS ANGLE UNPUBLI5HED 19 PRODUCTS RELEASED AMP BY MAY BE FOR PUBLICATION INCORPORATED, HARRISBURG, PA. COVERED BY 6 7 PROJECTION U„5„ AND FOREIGN 5 4 3 INTERNATIONAL PATENT5 AND/OR RIGHTS PATENT5