WINBOND 2301 Search Results

Contextual Info: W957D6HB 128Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality

W958D6DBC

Contextual Info: W958D6DB 256Mb Async./Burst/Sync./A/D MUX 1. GENERAL DESCRIPTION Winbond x16 ADMUX products are high-speed, CMOS pseudo-static random access memory developed for lowpower, portable applications. The device has a DRAM core organized. These devices are a variation of the industrystandard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality

W968D6DAG

Contextual Info: W968D6DA 256Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.

W967d6hb

Abstract: W967 CRAM 256mb
Contextual Info: W967D6HB 128Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.

Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16

Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4

Contextual Info: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16

W949D6

Abstract: W949D6KBHX5I W949D2KB A01-001 W949D W949D2KBJX5I W949D6KBHX winbond 2301 w949d2 W949D6KB
Contextual Info: W949D6KB / W949D2KB 512Mb Mobile LPDDR 1. GENERAL DESCRIPTION W949D6KB / W949D2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16

W94AD6KBHX5I

Abstract: W94AD6KBHX5E W94AD6KB W94AD2KBJX5E W94AD2KB W94AD2KBJX5I
Contextual Info: PRELIMINARY W94AD6KB / W94AD2KB 1Gb Mobile LPDDR 1. GENERAL DESCRIPTION W94AD6KB / W94AD2KB is a high-speed Low Power double data rate synchronous dynamic random access memory LPDDR SDRAM , An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16

Contextual Info: W949D6DB / W949D2DB 512Mb Mobile LPDDR Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

w949d6cbh

Abstract: WINBOND cross reference W949D6CB winbond Mobile LPDDR W949D6CBHX5E winbond W949D6CB W949D6
Contextual Info: W949D6CB / W949D2CB 512Mb Mobile LPDDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

W948D6FBHX5I

Abstract: 60VFBGA W948D6FBHX W948D6FBHX6I W948D6FBHX-6E
Contextual Info: W948D6FB / W948D2FB 256Mb Mobile LPDDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES. 4

W947D6HBHX6E

Abstract: W947D6HBHX-6E W947D6HB W947 winbond Mobile LPDDR
Contextual Info: W947D6HB / W947D2HB 128Mb Mobile LPDDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES. 4

w949d6cbh

Abstract: A01-007 winbond W949D6CB W949D2CBJX WINBOND cross reference winbond 2301
Contextual Info: W949D6CB / W949D2CB 512Mb Mobile LPDDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

vt1631

Abstract: 8375X intel g31 motherboard repair gigabyte g31 MOTHERBOARD SERVICE MANUAL CB-1410 A1 SERVICE MANUAL tv mitsubishi ct 29 b4 est fujitsu fpcap full Socket-462 lg r40 MOTHERBOARD CIRCUIT diagram via vt8235
Contextual Info: SERVICE MANUAL FOR 8375X BY: Ally.Yuan Repair Technology Research Department /EDVD Feb.2004 8375X N/B Maintenance CONTENTS 1. Hardware Engineering Specification …………………………………………………………………… 4 1.1 Introduction ……………………………………………………………………………………………………………. 4

BCR100

Contextual Info: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:

MT46H64M16LF

Contextual Info: Advance‡ 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features • • • • Table 2: Endur-IC technology

Contextual Info: Advance‡ 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

Contextual Info: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • • • • • VDD/VDDQ – 1.8V/1.8V – 1.8V/1.2V1 • Configuration – 32 Meg x 16 8 Meg x 16 x 4 banks

Contextual Info: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

MT46H16M32

Contextual Info: 512Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

MT46H64M16LF

Contextual Info: 1Gb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options continued • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)

elpida lpddr2

Abstract: samsung* lpddr2 Elpida LPDDR2 Memory lpddr2 samsung lpddr2 MT46H16M16LF MT46H8M32LF sac105 micron LPDDR2 X32 elpida memory lpddr2
Contextual Info: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 16 Meg x 16 4 Meg x 16 x 4 banks – 8 Meg x 32 (2 Meg x 32 x 4 banks)

A2601

Contextual Info: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile LPDDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF – 2 Meg x 32 x 4 banks Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)