WE 38001 Search Results

6116A

Abstract: CY6116A-55DMB 6117a MA 6116A CY6116A CY6117A 6116A-55
Contextual Info: 6116A: 11/8/89 Revision: Monday, November 8, 1993 CY6116A CY6117A Features Pin Configurations DIP/SOJ Top View A6 2 23 A8 A5 3 22 A9 A4 4 21 WE A3 5 25 WE OE A2 6 24 OE 19 A10 NC 7 23 A10 18 CE NC 8 22 NC 21 NC 8 17 I/O7 9 16 I/O6 10 I/O2 11 14 I/O4 GND 12

6116A25

Abstract: CY6116A CY6117A CY6116A-55DMB
Contextual Info: 6116A: 11/8/89 Revision: Monday, November 8, 1993 CY6116A CY6117A Features Pin Configurations DIP/SOJ Top View A6 2 23 A8 A5 3 22 A9 A4 4 21 WE A3 5 25 WE OE A2 6 24 OE 19 A10 NC 7 23 A10 18 CE NC 8 22 NC 21 NC 8 17 I/O7 9 16 I/O6 10 I/O2 11 14 I/O4 GND 12

Contextual Info: ADVANCED INFORMATION CYPRESS SEMICONDUCTOR Features • 32K x8 • Separate I/O • Fully registered — Address — Data in — Data out — CE, WE • Asynchronous output enable • Self-timed write • Transparent Write and write p ass­ through features

ZR38500

Abstract: zoran zr38500 ac3 decoder Crystal 3225 pink noise generator 10uF CAPACITOR AC-3 pioneer corporation pioneer pll POKE
Contextual Info: Document Revision - May, 1996 An Application Note on the ZR38500 Dolby AC-3/ProLogic Decoder May, 1996 Designing with the ZR38500 Audio Decoder This document attempts to answer several frequently asked (and not asked) questions about using the ZR38500 Audio Decoder in a typical audio decoder system. It also suggests a few debugging steps we

CY7C1009-15VC

Contextual Info: C Y 7 C 1 0 0 9 C Y 7 C 1 0 9 P Yi. PX :V «*1 128K 8 Static RAM active HIGH chip enable CE2 , an active LOW output enable (UE), and three-state drivers. Writing to the device is accom­ plished by taking chip enable one (CEi) and write enable (WE) inputs LOW and chip enable two (CE2) input HIGH. Data on

CY7C1009

Abstract: CY7C109
Contextual Info: 009 CY7C109 CY7C1009 128K x 8 Static RAM Features • High speed — tAA = 10 ns • Low active power — 1017 mW max., 12 ns • Low CMOS standby power — 55 mW (max.), 4 mW (Low power version) • 2.0V Data Retention (Low power version) • Automatic power-down when deselected

CY7C109

Abstract: CY7C109-15PC CY7C109-15VC CY7C109-20PC CY7C109-20VC 7C10925
Contextual Info: CY7C109 128K x 8 Static RAM Features Functional Description D The CY7C109 is a highĆperformance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2), an active

CY7C1009

Abstract: CY7C1009-12PC CY7C1009-12VC CY7C1009-15DMB CY7C1009-15PC CY7C1009-15VC A7210
Contextual Info: PRELIMINARY CY7C1009 128K x 8 Static RAM Features D D D D D D D Functional Description The CY7C1009 is a highĆperformance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CE1 , an active HIGH chip enable (CE2),

c1826

Abstract: c1827 C1821 C1826 data C18-21 C1828 C1822 C1824 C1823 C182
Contextual Info: CY7C182 8Kx9 Static RAM Features The CY7C182, which is oriented toward cache memory applications, features fully static operation requiring no external clocks or timing strobes. The automatic power-down feature reduces the power consumption by more than 70% when the

CY7C1007

Abstract: CY7C1007-12PC CY7C1007-12VC
Contextual Info: PRELIMINARY CY7C1007 1M x 1 Static RAM Functional Description Features D D D D D D The CY7C1007 is a highĆperformance CMOS static RAM organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW chip enable CE and threeĆstate drivers.

Contextual Info: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when

automatic change over switch circuit diagram

Abstract: CY7C1007 CY7C1007-12PC CY7C1007-12VC CY7C1007-15PC R1480
Contextual Info: 1CY 7C10 07 PRELIMINARY CY7C1007 1M x 1 Static RAM Features is provided by an active LOW chip enable CE and three-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed

c1826

Abstract: C182 CY7C182 c1827
Contextual Info: 182 CY7C182 8Kx9 Static RAM Features The CY7C182, which is oriented toward cache memory applications, features fully static operation requiring no external clocks or timing strobes. The automatic power-down feature reduces the power consumption by more than 70% when the

c1826

Abstract: c1827 c1823 C182 CY7C182 R1481
Contextual Info: CY7C182 8Kx9 Static RAM Features • High speed — tAA = 25 ns • x9 organization is ideal for cache memory applications • CMOS for optimum speed/power • Low active power — 770 mW • Low standby power — 195 mW • TTL-compatible inputs and outputs

CY7C171A

Abstract: CY7C172A
Contextual Info: CY7C171A CY7C172A 4K x 4 Static RAM with Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW • Low standby power

C182

Abstract: CY7C182 R1481 C1827
Contextual Info: 1CY 7C18 2 CY7C182 8Kx9 Static RAM Features The CY7C182, which is oriented toward cache memory applications, features fully static operation requiring no external clocks or timing strobes. The automatic power-down feature reduces the power consumption by more than 70% when the

c1826

Contextual Info: 182 CY7C182 8Kx9 Static RAM Features The CY7C182, which is oriented toward cache memory applications, features fully static operation requiring no external clocks or timing strobes. The automatic power-down feature reduces the power consumption by more than 70% when the

CY7C187

Abstract: CY7C187A CY7C187A-15DMB CY7C187A-15LMB
Contextual Info: CY7C187A 64KĂxĂ1 Static RAM Features D D D D D D The CY7C187A is a highĆperformance CMOS static RAM organized as 65,536 words by 1 bit. Easy memory expansion is provided by an active LOW chip enable CE and threeĆstate drivers. The CY7C187A has an automatic powerĆdown

C164A-2

Abstract: CY7C164A CY7C166A CYC164A CYC166A C164A
Contextual Info: CYC164A CYC166A 16K x 4 Static RAM Features three-state drivers. The CY7C166A has an active low output enable OE feature. Both devices have an automatic power-down feature, reducing the power consumption by 60% when deselected. • High speed — 20 ns • Output enable (OE) feature (7C166A)

CY7C171A

Abstract: CY7C172A
Contextual Info: CY7C171A CY7C172A Features D D D The CY7C171A and CY7C172A are highĆ performance CMOS static RAMs orgaĆ nized as 4096 by 4 bits with separate I/O. Easy memory expansion is provided by an active LOW chip enable CE and threeĆ state drivers. They have an automatic powĆ

7c17

Abstract: CY7C171A CY7C172A C171A
Contextual Info: 1CY 7C17 2A CY7C171A CY7C172A 4K x 4 Static RAM with Separate I/O Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Transparent write 7C171A • Low active power — 375 mW

C164A-2

Abstract: CY7C164A CY7C166A
Contextual Info: CY7C164A CY7C166A 16K x 4 Static RAM Features D The CY7C164A and CY7C166A are highĆ performance CMOS static RAMs orgaĆ as 16,384 by 4 bits. Easy memory exĆ nized pansion is provided by an active LOW chip enable CE) and threeĆstate drivers. The CY7C166A has an active low output enĆ

A10C

Abstract: CY7C106 C1089 7C106
Contextual Info: CYPRESS SEMICONDUCTOR 4bE D O □ 0 G b 2 cm b OCYP 'T - % - Z 3 .-Ì -0 CY7C106 PRELIMINARY CYPRESS SEMICONDUCTOR 262,144 x 4 Static R/W RAM Features Functional Description • Highspeed — U a = 25 ns • CMOS for optimum speed/power • Low active power

CY7C161A

Abstract: CY7C162A
Contextual Info: CY7C161A CY7C162A 16K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enables CE1, CE2 and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 60% when deselected.