WBGA Search Results

Contextual Info: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

V54C3256

Abstract: V54C3256164VAB V54C3256164VAT V54C3256164VBT V54C3256404VAB V54C3256404VAT V54C3256404VBT V54C3256804VAB V54C3256804VAT V54C3256804VBT
Contextual Info: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

V54C3256804V

Contextual Info: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

V54C3256164

Abstract: V54C3256804
Contextual Info: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: 256MB 144PIN PC100 CL2 SDRAM DIMM With 16M X 8 3.3VOLT TS32MSS64V8L2 Description The TS32MSS64V8L2 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. Dimension The TS32MSS64V8L2 consists of 16 pieces of CMOS 16Mx8bits Synchronous DRAMs in WBGA packages and a

V54C3256164VBT

Abstract: V54C3256 V54C3256164VAB V54C3256164VAT V54C3256404VAB V54C3256404VAT V54C3256404VBT V54C3256804VAB V54C3256804VAT V54C3256804VBT
Contextual Info: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

Contextual Info: MOSEL VITELIC V54C3256 16/80/40 4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 7PC 7 8PC System Frequency (fCK) 166 MHz 143 MHz 143 MHz 125 MHz Clock Cycle Time (tCK3) 6 ns 7 ns 7 ns 8 ns Clock Access Time (tAC3) CAS Latency = 3

K4R571669A-FCK8

Abstract: K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9
Contextual Info: Direct RDRAM K4R571669A/K4R881869A 256/288Mbit RDRAM A-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669A/K4R881869A Change History Version 1.11( September 2001) - Preliminary

K4R271669F

Contextual Info: Direct RDRAM K4R271669F 128Mbit RDRAM F-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 Direct RDRAM™ K4R271669F Change History Version 1.4 ( September 2003 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

K4R271669E

Contextual Info: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

code A106

Abstract: MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106
Contextual Info: Preliminary MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 0.1 Sept. 2003 MD18R3268(G)AG0 Preliminary (32Mx18)*8(16)pcs 32 Bit RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

K4R271669E-RcCS8

Abstract: K4R271669E
Contextual Info: Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

Contextual Info: TMS320DM6446 www.ti.com SPRS283H – DECEMBER 2005 – REVISED SEPTEMBER 2010 TMS320DM6446 Digital Media System-on-Chip Check for Samples: TMS320DM6446 1 Digital Media System-on-Chip DMSoC 1.1 Features 12 • High-Performance Digital Media SoC – 513-, 594-, 810-MHz C64x+ Clock Rates

W971GG6JB

Abstract: 8X12 DDR2-667 DDR2-800 0A80
Contextual Info: W971GG6JB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

Contextual Info: TMS320DM6437 Digital Media Processor www.ti.com SPRS345D – NOVEMBER 2006 – REVISED JUNE 2008 1 TMS320DM6437 Digital Media Processor 1.1 Features • • • • High-Performance Digital Media Processor DM6437 – 2.5-, 2.-, 1.67-, 1.51-, 1.43-ns Instruction

Contextual Info: SM320DM6446 Digital Media System-on-Chip www.ti.com SPRS607A – JUNE 2009 – REVISED JUNE 2009 1 Digital Media System-on-Chip DMSoC 1.1 Features • • • • High-Performance Digital Media SoC – 594-MHz C64x+ Clock Rates – 297-MHz ARM926EJ-S™ Clock Rates

TMS320DM3x

Abstract: DM357 tc 4518 bp 1608 1a60 BT 1610 digital volume control elektronik DDR TMS320DM6437 Evaluation Module TMS320DM357
Contextual Info: TMS320DM357 Digital Media System-on-Chip www.ti.com SPRS553 – NOVEMBER 2008 1 Digital Media System-on-Chip DMSoC 1.1 Features • • • • • • • High-Performance Digital Media SoC – 270-MHz ARM926EJ-S Core – Fully Software-Compatible With ARM9™

Contextual Info: W632GU6KB 16M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

Contextual Info: W631GU6KB 8M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5

dax6

Abstract: Mobile SDRAM
Contextual Info: V55C1256164MG 256Mbit MOBILE SDRAM 1.8 VOLT, TSOP II / FBGA PACKAGE 16M X 16 75 9 10 System Frequency fCK 133 MHz 111 MHz 100MHz Clock Cycle Time (tCK3) 7.5ns 9.0 ns 10 ns Clock Access Time (tAC3) CAS Latency = 3 6.0 ns 7.0 ns 8.0ns • Available in 54-ball FBGA (with 9x6 ball array

DS4000

Abstract: DS4000N J-STD-020A
Contextual Info: DS4000 Digitally Controlled TCXO www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS4000 digitally controlled temperature-compensated crystal oscillator DC-TCXO features a digital temperature sensor, one fixed-frequency temperaturecompensated square-wave

K4H560838C-TCB3

Abstract: DDR200 DDR266A DDR266B DDR333 k4h560838ctcb3
Contextual Info: 256Mb C-die x4/8 DDR SDRAM DDR SDRAM Specification Version 0.7 - 1 - REV. 0.7 Jan. 31. 2002 256Mb C-die(x4/8) DDR SDRAM Revision History Version 0 (May, 2001) - First version for internal review of 256Mb C-die. Version 0.1 (July, 2001) - Updated target current spec(TSOP package base)

NT5CB64M16AP-CF

Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
Contextual Info: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )