W702 Search Results

ic LM 356

Abstract: bluetooth transmitter receiver circuit diagram data sheet ic 7495 ANTENNA-FILTER bluetooth transmitter circuit diagram 27 mhz Radio control Ericsson microwave antenna array antenna bluetooth transmitter receiver ic LM 356 equivalent
Contextual Info: Product Brief March 2001 W7020 Radio Module Features Description + Complete RF solution, compliant with Bluetooth* specification version 1.0B + Highly integrated module including RF transceiver IC, antenna filter, and transmit/receive baluns + 0 dBm, typical, output power at 50 Ω

bluetooth transmitter receiver circuit diagram

Abstract: bluetooth transmitter circuit diagram free IC 555 Bluetooth RSSI circuit diagram ic 7495 of ic 7495 Bluetooth circuit Rx digital radio circuit diagram IC vco 900 1800 mhz ic lm 807
Contextual Info: Product Note December 1999 W7020 Bluetooth* Radio Module Description Features + Complete Bluetooth RF solution, compliant with Bluetooth specification version 1.0 + Highly integrated module including RF transceiver IC, antenna filter, and transmit/receive baluns

pin diagram of ic 7495 shift register

Abstract: LUCW7020 ic 7495 parallel access shift register pin diagram of ic shift registers 7495 ericsson trx receiver sensitivity cdi circuit diagram 2.4 ghz adjustable frequency RSSI digital radio circuit diagram of Shift Register IC 7495 RS1U
Contextual Info: Preliminary Data Sheet September 2000 W7020 Bluetooth* Radio Module Features + Complete Bluetooth RF solution + Compliant with Bluetooth specification version 1.0 + Highly integrated module including an RF transceiver IC, antenna filter, and transmit/receive

I22k

Contextual Info: 0805CX MINIATURE RF CHIP INDUCTORS Pulse A T C C H N I T t O l C O M P A N Y Designed for tireless Products & Wirewound ceramic core construction High Q values and self-resonant frequency 45 Tin/lead or gold terminations Industry .standard 0805 2012 surface

PC28F256P33

Abstract: JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74
Contextual Info: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read

pc28f128p33b

Abstract: PC28F128P33 JS28F128P33BF js28f640p33 pc28f128p33bf60 P33-65nm RC28F128P33 JS28F128P33TF70 JS28F128P33 PC28F128P33T
Contextual Info: Numonyx AxcellTM P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features „ „ „ High performance: — 60ns initial access time for Easy BGA — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read

pc28f00ap33

Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

W502

Abstract: W203 W101 D14-111 W501 w603 JXWBKG-8-213-11 SP8T switch package ghz W202 W702
Contextual Info: Reflective Switches 0.02 to 18GHz The content of this specification may change without notification 7/01/09 PIN Switches Coaxial Reflective Switches 0.02 to 18GHz Freq. Range P/N Type GHz JXWBKG-1-213-111 Insertion Loss (dB) Max VSW R Isolation (dB) Min

w502

Abstract: W302 W203 W101 w603 W702 x101 W103 X103 w401
Contextual Info: OUTLINE DRAWING The content of this specification may change without notification 7/01/09 PIN Switches Outline Drawings Size: mm Outling Drawings X101 X103 X104 X105 W101 W102 OUTLINE DRAWING The content of this specification may change without notification 7/01/09

sil t604

Abstract: PE-67585 PE-51686 PE-68023 amd 2906 nec b1007 PE-68068 broadcom adsl nec c277 KS8761
Contextual Info: LAN COMPONENTS LAN Modules/IC Cross Reference . . . . . . . . . . . . . .2-7 100 Mb Technology . . . . . . . . . . . . . . . . . . . . . . . . . .2-3 10Base-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4-6 Token Ring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

8A905

Abstract: C9024 RA78K0S a006 f425 fn521 W302 CC78K0S PC-9800 SM78K0S
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

burndy Y35 DIE SET

Abstract: YPC26R8U burndy Y750 YC26C26 burndy Y35 YPC28U26 YC26C2 burndy yc28c28 YP26AU2 burndy die set Y35
Contextual Info: BURNDY Overhead PRODUCT LINE TABLE OF CONTENTS TAP CONNECTORS Mechanical Bolted . . . . . . . . . . . . H-3 - H-17 Compression . . . . . . . . . . . . . . . . H-18 - H-37 Transformer and Equipment. . . . . H-38 - H-40 COMPRESSION SPLICES Service Entrance . . . . . . . . . . . . . H-42 - H-45

Contextual Info: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

RC28F256P33BF

Abstract: JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E
Contextual Info: Numonyx Flash Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,

SCSP M18

Abstract: PF38F 3098* intel PF38F4050
Contextual Info: Intel StrataFlash Cellular Memory M18 Datasheet Product Features High performance Read, Program and Erase — 93 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state

js28F128j3f75

Abstract: JS28F128J3F-75 JS28F128J3F RC28F128J3F-75 JS28F640J3F-75 sbc 83 PC28F640 js28f640J3F JS28F128J3F7 JS28F320J3F-75
Contextual Info: Numonyx Embedded Flash Memory J3 65 nm Single Bit per Cell (SBC) 32, 64, and 128 Mbit Datasheet Product Features „ „ „ „ Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block

e49 equivalent

Contextual Info: BURNDY Overhead TYPE YCS-RL UNISPLICE Jumper Sleeve for ACSR, All Aluminum 6201, 5005 Compressed and Compact Conductors. Aluminum jumper sleeve, with cable stop, designed to be installed with same dies as equivalent full-tension UNISPLICE™. Withstands jumper loop-tensile and vibration

pc28f00ap30

Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

Contextual Info: Pulse 0805CX MINIATURE RF CHIP INDUCTORS A Designed for Wireless Products . pxCS oaVa T E C H N I T R O L C O M P A N Y Wirewound ceramic core construction High Q values and self-resonant frequency m. Gold terminations Industry standard 0805 2012 surface

TSOP 48 pin flash gbit

Abstract: JS28F00AP33BF 1FFC000
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features  High performance:  TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

MICRON mcp

Abstract: PC28F256P30B P30-65nm PC28F256P PC28F256P30BFF PF48F4400P0VBQEF PC28F256P30BFE JS28F256P30BF Micron 512MB NOR FLASH PF48F
Contextual Info: 256Mb and 512Mb 256Mb/256Mb , P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Security – One-Time Programmable Register: 64 OTP bits,

pc28f00ap30

Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
Contextual Info: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode

JS28F256P33

Abstract: PC28F256P33 PC28F256P33BF RC28F256P33 RC28F256P33BF JS28F256P33BF JS28F256P33TF PC48F4400P0TB0E PC28F256P33B PC28F256P33TF
Contextual Info: Numonyx AxcellTM Flash Memory P3365nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,

PF38F4050

Abstract: PF48F SCSP M18 105-Ball pf38f5060m0y 3098* intel
Contextual Info: Intel StrataFlash Cellular Memory M18 Datasheet Product Features • High Performance Read, Program and Erase — 96 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state