VTB4 Search Results

Contextual Info: VTB Process Photodiodes VTB4051 PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high

Contextual Info: VTB4051 VTB Process Photodiodes P A C K A G E DIMENSIONS inch mm CASE 13 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes offer very high shunt resistance and good blue response.

VTB4051

Contextual Info: VTB4051 VTB Process Photodiodes ¡ PACKAGE DIMENSIONS inch mm CASE 13 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes offer very high shunt resistance and good blue response.

VTB4051

Abstract: ceramic photodiode case 13
Contextual Info: VTB Process Photodiodes VTB4051 PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high

Contextual Info: VTB Process Photodiodes VTB4051H PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high

VTB4051H

Contextual Info: VTB Process Photodiodes VTB4051H PACKAGE DIMENSIONS inch mm CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high

VTB4-1000-20M000

Abstract: VTB4 DTS2075 vectron tcxo
Contextual Info: Customer Specific Product Data Sheet VTB4-1000-20M000 CMOS TCXO Pin Information Table 1. Pin Function Pin Symbol 1 7 8 14 Function NC GND Output No Connect Case Ground CMOS Output waveform Power Supply Voltage 3.3 V ± 5% V DD Performance Characteristics

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

SSIE1340

Abstract: varo VARO VF 12 25PW60 SUES706 DS17-04A 4AF4NLV 4af6 motorola 1n3495 SR25B-6S
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number •o Part Number Manufacturer Max A VRRM IFSM (V) (A) vF Max IF @ (V) IR Test 25 °C @ (A) (A) VR IR Test M @ (A) T2 Test (X) Toper Package Style Max (°C) General-Purpose, lo >= 25 A (Cont'd) 5 10 15 20 25 30

VTB4050

Abstract: VTB4051
Contextual Info: 5bE D aOBQbQS 0 0 0 1 0 3 b S5û « V C T VT B4050, 4051 VTB Process Photodiodes _ E G 8. G V A C T E C PACKAGE D IM EN SIO N S inch mm .305 .067 (1 .7 0 ) (7 .7 S ) CASE 13 PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and

1N2000

Abstract: VTA200
Contextual Info: IVIICRI ÌR 0 O IU U A L IT V / IBR 25 S E M IC IC C O N D U C T O R , IN C . Amp Silicon Avalanche Integrated Rectifiers v t Series 140V, 280V, and 420V RMS Operation 250V, 450V, and 650V Minimum Avalanche Voltages 25 Amp DC Output Current at T c = 100°C

VTB8440

Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
Contextual Info: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue

VTP1220FBH

Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
Contextual Info: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0

4051 application photodiode

Abstract: VTB4050 VTB4051
Contextual Info: 5bE T> BDBObO'i □ □ □ 1 0 3 b B B S H V C T VTB Process Photodiodes V T B 4 0 5 0 , 4051 _ E G 8. G VACT EC PACKAGE DIMENSIONS inch mm .3 0 5 ( 7 . 7 5 ) CASE 13 PRODUCT DESCRIPTION Isc CHARACTERISTIC Short Circuit Current TCIsc Isc Temp. Coefficient

VTB24SC24

Abstract: CA95037 VTB48SC24 VTB15SC24
Contextual Info: DC/DC SWITCHING POWER SUPPLY DC INPUT 12,24,48, 110 SINGLE OUTPUT 50WATTS VTB-SCx/VTB-SD SERIES General Description Features 1. 2. 3. Dimension: 96W x 160L × 33H Variety of Models Chassis mount type Compact and High Efficiency DC INPUT: 12V Input Characteristics

VTA200 T

Abstract: VTB400 VTA200 VTA400 VTA600 VTB200 VTB600 VTC200 VTC400 VTC600
Contextual Info: P IICRO SEM I CORP/ M ICRO t SbE m k llS I O ? 000131? IBR mnoL 'V23'07 MICRO QUALITY / 33M S E M I C O N D U C T O R . IN C 25 Amp Silicon Avalanche Integrated Rectifiers v t Series 140V, 280V, and 420V RM S Operation 250V, 450V, and 650V Minimum Avalanche Voltages

tlu 011

Abstract: CP12 CP14 CP15 CRC-32 32 bit SECDED* encoder adds 5 bit ecc optical fiber free book smart card K001 "routing tables"
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. C-5 Network Processor Architecture Guide C-5 NP D0 Release For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. C-Port Corporation