VR PHOTO Search Results

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)

KPIN1041E01

Abstract: S7911 S7912 SE-171
Contextual Info: PHOTODIODE Si PIN photodiode S7911, S7912 High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage S7911: fc=2 GHz VR=2 V S7912: fc=1.5 GHz (VR=2 V) l Low terminal capacitance S7911: Ct=0.45 pF (VR=2 V)

KPIN1041E02

Abstract: S7911 S7912 SE-171
Contextual Info: PHOTODIODE Si PIN photodiode S7911, S7912 High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage S7911: fc=2 GHz VR=2 V S7912: fc=1.5 GHz (VR=2 V) l Low terminal capacitance S7911: Ct=0.45 pF (VR=2 V)

GM2HS

Abstract: GM7VHR germanium photodiode PIN germanium Germanium power GM8HS Germanium Power Devices
Contextual Info: E Ge pn Detectors Electrical Characteristics @ 25 °C TYPE ACTIVE SHUN T R E S DARK CURRENT TEST REVERSE MAX REVERSE CAPACITANCE DIA. @Vr= 10mV @Vr=Vtest BIAS VOLTS @Vr MAX K A Min. Typ. (HA MAX.) (Volts) (Volts) (mm.) GM2 0.5 SQ. CUT-OFF FREQ. (pW/VHz) @Vr, 50QRL

Contextual Info: SI-FOTODETEKTOREN Package Type SILICON PHOTODETECTORS ϕ deg. Radiant sensitive area mm2 IP VR = 5 V λ = 870 nm 1 mW/cm2 µA 5.1.3 im Plastikgehäuse mit Filter für 950 nm IRED IR (VR = 10 V) λ10% tr,tf (VR = 20 V, RL = 50 Ω) nA nm ns Ordering code

BPW34S

Abstract: Q62702-P1794 bpw 104
Contextual Info: SI-FOTODETEKTOREN Package Type SILICON PHOTODETECTORS ϕ Radiant sensitive area deg. mm2 IP λ = 950 nm, Ee = 1 mW/cm2, VR = 5 V µA IR (VR = 10 V) λ10% tr,tf (VR = 20 V, RL = 50 Ω) nA nm ns 2.2 SMT-Dioden 2.2 SMT-Diodes 2.2.1 SMT PIN Fotodioden 2.2.1 SMT-PIN Photodiodes

bpw 104

Abstract: photodiode 1100 nm 104 b diode diode 22 16 BPW 34 FAS BP 104 FAS
Contextual Info: SI-FOTODETEKTOREN Package Type SILICON PHOTODETECTORS ϕ Radiant sensitive area deg. mm2 IP λ = 950 nm, Ee = 1 mW/cm2, VR = 5 V µA IR (VR = 10 V) λ10% tr,tf (VR = 20 V, RL = 50 Ω) nA nm ns 2.2 SMT-Dioden 2.2 SMT-Diodes (cont’d) 2.2.2 SMT-PIN-Fotodioden mit Filter

acer laptop battery pinout

Abstract: PCT303W str f 6655 hp laptop battery pinout circuit diagram wireless spy camera car ecu microprocessors RS -24V SDS RELAY difference between rtos psos vx works c executive NEC BONITO bird bell mini project
Contextual Info: VR Series Catalog 2000 64-bit MIPS Processors 17K, 75X, 78K, V850, VR Document No. U14705EE1V0PF00 2000 NEC Electronics Europe GmbH. Printed in Germany. All rights reserved. VR Series, VR4121, VR4122, VR4181, VR43xx, VR5000, VR5432, VRC4172, VRC4173, Ravin,

car ecu microprocessors

Abstract: VRC4173 green hills ppc compiler manual PCT303W VRC4172 D4047 alu 9308 d green hills compiler options oem v850 difference between rtos psos vx works c executive 216MIPS
Contextual Info: VR Series Catalog 2000 64-bit MIPS Processors 17K, 75X, 78K, V850, VR Document No. U14705EE1V0PF00 2000 NEC Electronics Europe GmbH. Printed in Germany. All rights reserved. VR Series, VR4121, VR4122, VR4181, VR43xx, VR5000, VR5432, VRC4172, VRC4173, Ravin,

detector inas

Contextual Info: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO

fototransistor BPW 39

Abstract: BPW21 photodetectors Q62702P945 SFH 3410 BPX 48 fototransistor
Contextual Info: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 6. Fotodetektoren für spezielle Anwendungen Package Type ϕ Radiant sensitive area deg. mm2 6. Photodetectors for Special Applications IP IR VR = 10 V Sλ rel tr,tf (VR = 5 V) µA nA % µs 6.1 Blau-empfindliche Fotodiode

Contextual Info: SPV1001N Cool bypass switch for photovoltaic applications Features • SPV1001N30 IF=12.5 A, VR=30 V ■ SPV1001N40 IF=12.5 A, VR=40 V ■ Very low forward voltage drop ■ Very low reverse leakage current ■ 150 °C operating junction temperature Anodo Catodo

SPV1001N

Abstract: SPV1001N30 SPV1001N40
Contextual Info: SPV1001N Cool bypass switch for photovoltaic applications Features • SPV1001N30 IF=12.5 A, VR=30 V ■ SPV1001N40 IF=12.5 A, VR=40 V ■ Very low forward voltage drop ■ Very low reverse leakage current ■ 150 °C operating junction temperature Anodo Catodo

Contextual Info: SPV1001N Cool bypass switch for photovoltaic applications Features • SPV1001N30 IF=12.5 A, VR=30 V ■ SPV1001N40 IF=12.5 A, VR=40 V ■ Very low forward voltage drop ■ Very low reverse leakage current ■ 150 °C operating junction temperature Anodo Catodo

2CL25

Abstract: 2CL77 2CL91 2CL24 2CL70 1A7 Zener SMD LL4001 BA151 HVP320 2CL75
Contextual Info: Diodes Fast Switching Rectifiers LL4148 Vrm=100V;Ifsm=500mA 1N4148B/P T/R (T/B) Vr=100V;Ifm=0.5A MinIMELF(SOD 80) DO 41 General Purpose Rectifiers LL4001 4007 NEW Vrm=50 1000V; Ifsm=1.0A MELF 1N4001 4007(B/P)(T/R)(T/B) Vr=50 1000V; Ifm=1.0A DO 41 1A7 Vr=1200V; Ifm=1.0A

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)

G8198

Abstract: G8198-01 G8198-02 SE-171
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)

Contextual Info: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)

G8198

Abstract: G8198-01 G8198-02 SE-171 photodiode 1 Gbps 1.55 p-i-n photodiode 10 Ghz
Contextual Info: PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage l Optical fiber communications l Fiber channel l Gigabit Ethernet G8198-01: 3 GHz VR=2 V G8198-02: 2 GHz (VR=2 V)

5012PD

Abstract: L028 fyl-3522xx 4802PD L027 35-22p L026
Contextual Info: SILICON PHOTO DIODES Open circuit Short Circuit Reverse Dark Reverse Light Reverse Break voltage Current Current Current Down Voltage VOC (ISC) ID(R) (IL) (VBR) Max.(nA) Typ.(uA) Min.(V) VR=10V VR=5V IR=100uA Part No. Package FYL- Typ.(mV) Typ.(uA) 3 L-026

CL 6503

Abstract: HPDR3K-15A n050
Contextual Info: Photodiodes RoHS Conformity Ta=25cC Device No Lens Color Sensitive Open Dark Current Wavelength Circuit MAX A.p(nm) A-(nm) Voc(v) Id(nA) Light Current (typ) View Angle VR(V) IP(uA) VR(V) Ev 291/2 1000Lux 40 1000LUX 40 O.Smw/ciri2 50 12.0 min 4.6P -0.9 -1.75

HPDB1B-48D

Abstract: HPDB5K-15A HPDB3J-14D HPDR3K-15A HPDR3K-45A hpdb5 HPDB5-14D-B
Contextual Info: Photodiodes Ta=250C Sensitive Open Dark Current Light Current typ Device No HPDB1-48D Lens Color Waterclear Wavelength Circuit Xp(nm) X(nm) 900 500-1100 (MAX) Angle VR(V) IP(uA) VR(V) Ev 291/2 30 10 10 10 1000LUX 40 30 10 10 10 1000LUX 40 Voc(v) Id(nA) 0.39

hpdb5

Abstract: HPDB5K-15A HPDB1b-48D HPDB5-14D-B HPDB3B HPDB1-48D HPDR3K-15A
Contextual Info: Photodiodes o Ta=25 C Device No Lens Color Sensitive Open Dark Current Wavelength Circuit MAX lp(nm) Voc(v) Id(nA) l(nm) View Light Current (typ) Angle VR(V) IP(uA) VR(V) 2q1/2 Ev 25.0 min 0.4 0.5 1.1 2.25 HPDMIB-4D Water clear 900 500~1100 0.39 2.75 1.85