13PD100 Search Results

InGaAs pin photodiode 1Ghz

Abstract: TELCOM 13PD100-TO
Contextual Info: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD100-TO The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest standard device enabling a 1GHz frequency cutoff. Planar semiconductor

InGaAs pin photodiode 1Ghz

Contextual Info: High Speed InGaAs p-i-n Photodiode Sheet 1 of 1 13PD100-ST, -SMA, -FC, -SC The 13PD100-ST, an InGaAs photodiode with a 100µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is the largest standard device enabling a 1Ghz

13PD100-ST

Contextual Info: High Performance InGaAs p-i-n Photodiode ‘ST’ Active Device Mount 13PD100-ST The 13PD100-ST, an InGaAs photodiode with a 100µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is the largest standard device enabling a 1 GHz Frequency cutoff. Planar semiconductor design and dielectric

13PD100-TO

Abstract: photodiode 011
Contextual Info: High Speed InGaAs p-i-n Photodiode 13PD100-TO The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region packaged in a TO-46 header, is the largest standard device enabling a 1 GHz frequency cutoff. Planar semiconductor design and dielectric passivation provide low noise performance.

InGaAs pin photodiode 1Ghz

Contextual Info: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is the largest standard device enabling a 1GHz frequency cutoff. Planar

Contextual Info: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD100-F The 13PD100-F is an InGaAs photodiode with a 100mm-diameter photosensitive region packaged in a coaxial fiber pigtailed module. Modules are available with stock or customer-supplied fiber in single or multimode versions. The coaxial package offers streamlined design and strain-relief for the fiber. Planar

13PD100-F

Contextual Info: High Speed Fiber Pigtailed InGaAs p-i-n Photodiode 13PD100-F The 13PD100-F is an InGaAs photodiode with a 100µm-diameter photosensitive region packaged in a co-axial fiber pigtailed module. Modules are available with stock or customersupplied fiber in single or multi-mode versions. The coaxial package offers streamlined design

photodiode ingaas ghz

Abstract: 13PD100-S
Contextual Info: High Speed InGaAs p-i-n Photodiode 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region mounted on a metallized ceramic substrate, is the largest standard device enabling a 1 GHz frequency cutoff. Planar semiconductor design and dielectric passivation provide low noise

Contextual Info: High Speed InGaAs p-i-n Photodiode Sheet 1 of 1 13PD100-FC The 13PD100-FC, an InGaAs photodiode with a 100µm-diameter photosensitive region packaged in a TO-46 header and aligned in an FC active device mount, is intended for high speed and low noise applications.

detector inas

Contextual Info: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO

2PD250

Abstract: 35PD10M 35PD3M detector inas
Contextual Info: CHEMSENSE Detectors Data Sheet Sheet 2 of 2 NIR Components - 2.2 PD Series The 2.2 PD series of detectors is based on GAInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 µm, and peak response of 1 A/W occurs at about 2.2 µm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared