35PD10M Search Results

35PD10M

Abstract: Photodiode, 1550nm detector ingaas InGaAs Photodiode 1550nm
Contextual Info: Ultra-Large Area InGaAs p-i-n Photodiode 35PD10M The 35PD10M is the largest standard InGaAs detector available on the market. Both circular 10 mm diameter and square (10 mm edge length) formats are offered. Standard packaging includes a hermetic TO-3 header and a ceramic flat pack. Custom packaging would also be

PIN Photodiode 1550nm sensitivity

Abstract: InGaAs Photodiode 1550nm PIN Photodiode 1550nm photodiode responsivity 1550nm, 1 35PD10M PIN photodiode InGaAs 1550nm
Contextual Info: Ultra-Large Area InGaAs p-i-n Photodiode 35PD10M The 35PD10M is the largest standard InGaAs detector available on the market. Both circular 10 mm diameter and square (10 mm edge length) formats are offered. Standard packaging includes a hermetic TO-3 header and a ceramic flat pack. Custom packaging would also be

Contextual Info: Ultra-Large Area InGaAs p-i-n Photodiode Sheet 1 of 1 35PD10M The 35PD10M is the largest standard InGaAs detector available on the market today. Both circular 10mm diameter and square (10mm edge length) formats are offered. Applications include high sensitivity

detector inas

Contextual Info: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO

2PD250

Abstract: 35PD10M 35PD3M detector inas
Contextual Info: CHEMSENSE Detectors Data Sheet Sheet 2 of 2 NIR Components - 2.2 PD Series The 2.2 PD series of detectors is based on GAInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 µm, and peak response of 1 A/W occurs at about 2.2 µm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared