13PD150 Search Results

13PD150-S

Contextual Info: High Performance InGaAs p-i-n Photodiode 13PD150-S The 13PD150-S, an InGaAs photodiode with a 150µm photosensitive region mounted on a metalized ceramic substrate, is intended for moderate-to-high speed applications. Efficient coupling to multi-mode fiber in hybrid modules is enabled by the relatively large photosensitive

Contextual Info: High Performance InGaAs p-i-n Photodiode Sheet 1 of 3 13PD150-S The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for moderate-to-high speed applications. Efficiency coupling to

13pd150-s

Contextual Info: High Performance InGaAs p-i-n Photodiode Sheet 1 of 1 13PD150-ST, -SMA, -FC, -SC The 13PD150-ST, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for high coupling efficience to multimode fiber in moderate-to-high speed applications. Planar semiconductor design and dielectric passivation

InGaAs photodiode TO-46

Contextual Info: High Performance InGaAs p-i-n Photodiode Sheet 1 of 3 13PD150-TO The 13PD150-TO, an InGaAs photodiode with a 150µm-diameter photosensitive region and packaged in a TO-46 header, is intended for moderate-to-high speed applications. Efficient coupling to multi-mode fiber in

13PD150-TO

Contextual Info: High Performance InGaAs p-i-n Photodiode 13PD150-TO The 13PD150-TO, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header, is intended for moderate-to-high speed applications. Efficient coupling to mulit-mode fiber in active device receptacles is enabled by the relatively large

13PD150-ST

Contextual Info: High Performance InGaAs p-i-n Photodiode ‘ST’ Active Device Mount 13PD150-ST The 13PD150-ST, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for high coupling efficiency to multi-mode fiber in moderate-to-high speed applications. Planar

detector inas

Contextual Info: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO

2PD250

Abstract: 35PD10M 35PD3M detector inas
Contextual Info: CHEMSENSE Detectors Data Sheet Sheet 2 of 2 NIR Components - 2.2 PD Series The 2.2 PD series of detectors is based on GAInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 µm, and peak response of 1 A/W occurs at about 2.2 µm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared