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    13PD55 Search Results

    13PD55 Datasheets (2)

    Anadigics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    13PD55-F
    Anadigics High Speed InGaAs p-i-n Photodiode Original PDF 71.79KB 3
    13PD55-S
    Anadigics High Speed InGaAs p-i-n Photodiode Original PDF 66.7KB 3

    13PD55 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    55um

    Contextual Info: High Speed InGaAs p-i-n Photodiode 13PD55-C Anadigics #135599116 The 13PD55-C, an InGaAs photodiode with a 55µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very


    Original
    13pd55-c1300nm1500nm-40oc+2250oc55um PDF

    Contextual Info: High Speed InGaAs p-i-n Photodiode 13PD55-C The 13PD55-C, an InGaAs photodiode with a 55µm-diameter photosensitive region, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor design and dielectric passivation provide very


    Original
    13pd55-c1300nm-40oc250oc PDF

    13PD55-TO

    Contextual Info: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD55-TO The 13PD55-TO, an InGaAs photodiode with a 55µm-diameter photosensitive region and packaged in a TO46 header, is intended for high speed and low noise applications in telecommunications and data communications systems. Planar semiconductor design and dielectric passivation provide very low noise


    Original
    13pd55-to PDF

    detector inas

    Contextual Info: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO


    Original
    13pd5513pd7513pd75ldc13pd100+513pd15035pd30035pd300ldc2pd250detector inas PDF

    ingaas

    Abstract: 13PD55-TO
    Contextual Info: High Speed InGaAs p-i-n Photodiode 13PD55-TO The 13PD55-TO, an InGaAs photodiode with a 55µm-diameter photosensitive region and packaged in a TO-46 header, is intended for high speed and low noise applications in telecommunications and data communications systems. Planar semiconductor design and


    Original
    13pd55-to200oc1300nm-40oc+2250ocingaas PDF

    13PD55-F

    Contextual Info: High Speed Fiber Pigtailed InGaAs p-i-n Photodiode 13PD55-F The 13PD55-F is an InGaAs photodiode with a 55µm-diameter photosensitive region packaged in a co-axial fiber pigtailed module. Modules are available with stock or customersupplied fiber in single or multi-mode versions. The coaxial package offers streamlined design


    Original
    13pd55-f200oc1300nm-40oc+1250oc PDF

    13PD55-S

    Contextual Info: High Speed InGaAs p-i-n Photodiode 13PD55-S The 13PD55-S, an InGaAs photodiode with a 55µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications in telecommunication and data communication systems. Planar semiconductor


    Original
    13pd55-s200oc1300nm-40oc+1250oc PDF

    Contextual Info: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD55-F The 13PD55-F is an InGaAs photodiode with a 55mm-diameter photosensitive region packaged in a co-axial fiber pigtailed module. Modules are available with stock or customer-supplied fiber in single or multi-mode


    Original
    13pd55-f55mm-diameter PDF

    Contextual Info: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD55-S The 13PD55-S, an InGaAs photodiode with a 55µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is intended for high speed and low noise applications in telecommunications


    Original
    13pd55-s PDF

    2PD250

    Abstract: 35PD10M 35PD3M detector inas
    Contextual Info: CHEMSENSE Detectors Data Sheet Sheet 2 of 2 NIR Components - 2.2 PD Series The 2.2 PD series of detectors is based on GAInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 µm, and peak response of 1 A/W occurs at about 2.2 µm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared


    Original
    2pd2502pd50035pd5m35pd10m+235pd3mdetector inas PDF