PNA1801 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High sensitivity  Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs

Contextual Info: Phototransistors PNA1801L Silicon NPN Phototransistor Unit : mm For optical control systems 5.0±0.2 0.6 Features Not soldered 2.0 max. ø3.8±0.2 ø3.0±0.2 High sensitivity 15.0±1.0 4.5±0.3 Wide spectral sensitivity, suited for detecting GaAs LEDs Small size, high output power, low cost

PNA1801

Contextual Info: Phototransistors PNA1801 Silicon NPN Phototransistor Unit : mm For optical control systems 5.0±0.2 0.6 Features Not soldered 2.0 max. ø3.8±0.2 ø3.0±0.2 High sensitivity 15.0±1.0 4.5±0.3 Wide spectral sensitivity, suited for detecting GaAs LEDs Small size, high output power, low cost

PN168

Abstract: PNA1801L PNA1801
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type Unit: mm 5.0±0.2 15.0±1.0 • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Small size, high output power, low cost

PN168

Abstract: PNA1801L PNA1801
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type Unit: mm 5.0±0.2 • Features 4.5±0.3 15.0±1.0 M Di ain sc te on na tin nc ue e/ d • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs

PN168

Abstract: PNA1801L
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type For optical control systems • Features  High sensitivity  Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs

Contextual Info: Phototransistors PNA1801L PN168 Silicon planar type Unit: mm For optical control systems 5.0±0.2 15.0±1.0 • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Small size, high output power, low cost • φ3 shell type plastic package

PN168

Abstract: PNA1801L
Contextual Info: Phototransistors PNA1801L PN168 Silicon planar type Unit: mm 5.0±0.2 15.0±1.0 • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Small size, high output power, low cost • φ3 shell type plastic package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type Unit: mm For optical control systems 5.0±0.2 15.0±1.0 • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs

PN168

Abstract: PNA1801L
Contextual Info: Phototransistors PNA1801L PN168 Silicon NPN Phototransistor Unit : mm For optical control systems 5.0±0.2 0.6 Features Not soldered 2.0 max. ø3.8±0.2 ø3.0±0.2 High sensitivity 15.0±1.0 4.5±0.3 Wide spectral sensitivity, suited for detecting GaAs LEDs

PNA1801L

Abstract: PN168 PNA1801
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

TC4009BP

Abstract: DNP319 tps607 TLP1230 TLP1200 GP1S093HCZ0F SG2751 2SC1959 IS471FE PT380F
Contextual Info: 光センサ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)