VQB 200 D Search Results

bvoe

Abstract: TSC* 7 VQB 28 E
Contextual Info: TELEDYNE COMPONENTS 3bE D ITSC 3^171,02 QGG7Ô14 7 WTELEDYNE COMPONENTS SD5400 SD5401 SD5402 QUAD DMOS FET ANALOG SWITCH ARRAYS FEATURES APPLICATIONS • ■ ■ ■ ■ ■ Low Interelectrode Capacitances — Analog Input.3.5 pF Typ

Contextual Info: ¿888888888 |pM iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr D at a S h e e t No. 2 N 2 8 5 7 m o% #f 1 l $ 1 1 Ic I ^88888 id L SEMICONDUCTORS G eneric Part Num ber: 2N2857 Type 2N2857 G eom etry 0011 Polarity NPN Qual Level: J A N -J A N S

G119BL

Contextual Info: V I I -j Q I «7 f r Siliconix incorporated Monolithic 6-Channel Enhancement-type MOSFET Switch FEATURES BENEFITS APPLICATIONS • • • Differential Input Analog Signal Switching • Multiplexing • Designed to Operate with D125, D129 and D139 Integrated MOSFET for

wiring VDG 13 relay

Abstract: Battery Managements long range gold detector circuit diagram PIN CONFIGURATION IC RT 3060 1N4002 1N6282 1N6287 MC33121 MC33121FN MC33121P
Contextual Info: MOTOROLA Order this document by MC33121/D SEMICONDUCTOR TECHNICAL DATA MC33121 Low Voltage Subscriber Loop Interface Circuit SLIC Thin Film Silicon Monolithic Integrated Circuit • • • • • • • • • • • P SUFFIX PLASTIC PACKAGE CASE 738

21134 transistor

Abstract: RF1029 21134 case 244c-01 21134 npn RF NPN POWER TRANSISTOR 3 GHZ 5w
Contextual Info: MOTOROLA SC XSTRS/R F 4bE MOTOROLA •I D ■ b3b75S4 O D 'îSIS b _ SEMICONDUCTOR 7 HNOTb 7 ^3 3 ' 0 5 TECHNICAL DATA The RF Line UHF P o w e r T ran sisto r . . . d e sig n e d p rim a rily fo r w id e b a n d , la rg e -sig n a l o u tp u t a n d d riv e r a m p lifie r stages to

MP310

Abstract: MP318 mp311 MP313 MP312 UP312A "micro power systems" log conformance dual npn
Contextual Info: M 20E D • bQTTMMM./OQOaaöQ M I C R O POWER "SYST EMS I N C P311 MICRO POWER SYSTEMS MP312 MP313 MP318 NPN DUAL MONOLITHIC SILICON NITROX* TRANSISTORS MONOLITHIC MATCHED PAIRS FOR DIFFERENTIAL AMPLIFIERS HIGH G A IN . LOG CONFORMANCE MP318 Are < In from ideal TYP.

TAG 600

Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Contextual Info: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect

2SA1321

Abstract: 2SC3334
Contextual Info: TO SH IBA 2SA1321 2 S A 1 321 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS. • • • 5.1 MAX High Voltage : V c e O = —250V Low Cre : 1.8pF (Max.)

motorola TE 901

Abstract: MK1V135 2N390S MC14404
Contextual Info: bbE D MOTOROLA I b3b?s s3 ooaaa'ifl Mai « d o t s MOTOROLA SC TELECOM SEMICONDUCTOR TECHNICAL DATA MC3419-1L SUBSCRIBER LOOP INTERFACE CIRCUIT . . . designed as the heart o f a c ircu it to p rovide B O R SH Tfunctions fo r telephone service in Central O ffice, PABX, and S ubscriber Car­

High-Speed Analog N-Channel DMOS FETs -TO-72

Abstract: sd5000 sd5000 series 51850
Contextual Info: T em ic SD5000/5400 Series Semiconductors N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary P a rt N um ber V BR DS M in (V ) VGS(th) M a x (V) rDscon) M a x (Q ) Crss M a x (p F ) tON M a x (ns) SD5000I 20 1.5 70 @ VGs = 5 V

2010C

Abstract: 2557a 2SC4188
Contextual Info: Ordering number : EN 2557A 2SC4188 N0.2557A NPN Epitaxial Planar Silicon Transistor Ultrahigh-Definition CRT Display Video Output Applications i Features • High breakdown voltage : Vceo —200V • Small reverse transfer capacitance and excellent high frequency characteristic : cre = 1.3pF typ

2SC4212

Abstract: CONECTOR Type F
Contextual Info: Power Transistors 2S C 4212 2SC4212 Silicon NPN Triple-Diffused Planar Type P ackage Dim ensions Horizontal D eflection Driver for Color T V set • F eatures • High collector-em itter voltage V c e o • TO-126 package, no insulation needed when fixing to a heat sink

D147D

Abstract: C520D vqb 71 VQB71 D347D d348d VQE23 D346D Halbleiterbauelemente DDR VQE24
Contextual Info: electronica ] Nullpunktabgleich [T j ~8~| Nullpunktabgleich | Eingang L [ u Masse l i Eingang H T I Betriebsarten - Umschaltung T ] LSD ( letztes Digit) integrations-C f/2 Endwertabgleich \l3 MSD (höchstwertiges Digit) Betriebsspannung Us Z I BCD-Ausgang OC

BF180

Abstract: BF115 BF167 BF184 2N918 pin configuration BF181 BF185 TO-72 TO72 2N3933
Contextual Info: DIM A B C D E F G H MIN 5,24 4,52 4,31 0,40 1,14 2,28 . 0,91 MAX 5,84 4,95 5,33 0,53 0,76 1,39 2,97 1,17 J K L 0,71 12,7 12 DEG - 1,22 48 DEG ALL DIMENSIONS ARE IN M.M. Pin Configuration Available in TO-72 CDIL Code Style PIN 1 TO-72 PIN 2 PIN 3 PIN 4 Emitter

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Mem ory Driver Transistor MMPQ3467 PNP Silicon Motorola Preferred Device 1 CASE 751B-05, STYLE 4 SO-16 MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO —40 Vdc VCB ^10 Vdc veb 5.0 Vdc 'C 1.0

Contextual Info: 10116B.F SWITCHING TIME TEST CIRCUIT LOGIC DIAGRAM B,F PACKAGE V CC1 • V CC2 *2 0 Vdc OR NOR VCC1 - '■ VCC2 - 16' VEE “ * Positive logic: high level « " 1 ’ ’ FEATURES ■Good common mode nois* rejection • Fast propagation delay - 2.0 ne TYP • Low power dissipation - 83 mW/package TYP no load

TRANSISTOR S1d

Abstract: AX 1101
Contextual Info: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type

Contextual Info: SANYO SEMICONDUCTOR FC107 CORP E2E D 7 cn 7 D 7 b Q0G7372 1 T-Sl-ll # P N P Epitaxial Planar S ilicon C o m p o site Transistor 2066 Switching Applications 3075 with Bias Resistances R1=47ki2, R2=47kO Features • On-chip bias resistors (Ri = 47kfl,R2= 47k£2)

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mpsa13 636

Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bh53T31 QQ26Q13 flTfl H A P X MPSA13 MPSA14 SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS N-P-N silicon planar epitaxial darlington transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA

Contextual Info: ¡J8BBBBB88& p |M iwiHBBffi smssssP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. loniftBHhr. 1m1 IIr ^888o 88% #f 1 l Data Sheet No. 2N6988 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N6988 Type 2N6988 G eom etry 0600 P olarity PNP Q ual Level: J A N -J A N S REF: M IL-P R F -19 5 0 0 /5 5 8

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Contextual Info: D at a S he e t No. 2 N 2 2 1 9 A L C=L SEMICONDUCTORS Type 2N2219AL G e n e ric P a rt N u m b e r: 2N 2219A Geometry 0400 P olarity NPN Q ual Level: J A N -J A N S REF: MIL-PRF-19500/251 Features: • General-purpose transistor for switching and amplifier applicatons.

Contextual Info: DISCRETE SEMICONDUCTORS S&1EET BFQ236; BFQ236A NPN video transistors Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC05 Philips Semiconductors 1997 Oct 02 PH ILIPS PHILIPS Philips Semiconductors Product specification