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    VN24 Search Results

    VN24 Datasheets (109)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    VN2406
    Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF 449.14KB 2
    VN24061
    Motorola TMOS FET TRANSISTOR N-Channel-Enhancement Original PDF 52.92KB 4
    VN2406B
    Supertex Enhancement Mode MOSFET (includes Low Threshold MOSFET) Original PDF 449.14KB 2
    VN2406B
    Motorola Switchmode Datasheet Scan PDF 41.76KB 1
    VN2406B
    Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF 638.03KB 19
    VN2406B
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 80.77KB 1
    VN2406B
    Unknown FET Data Book Scan PDF 64.03KB 1
    VN2406B
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 116.08KB 1
    VN2406B
    Siliconix MOSPOWER Design Data Book 1983 Scan PDF 195.37KB 6
    VN2406D
    Vishay Intertechnology N-Channel 240-V (D-S) MOSFET Original PDF 55.32KB 5
    VN2406D
    Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original PDF 101.62KB 5
    VN2406D
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 80.77KB 1
    VN2406D
    Unknown FET Data Book Scan PDF 64.03KB 1
    VN2406D
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 116.08KB 1
    VN2406D
    Siliconix MOSPOWER Design Data Book 1983 Scan PDF 195.23KB 6
    VN2406D
    Vishay N-Channel Enhancement Mode MOSFET Transistor Scan PDF 184.57KB 5
    VN2406D
    Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF 182.74KB 1
    VN2406E
    Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original PDF 101.62KB 5
    VN2406E
    Vishay N-Channel Enhancement Mode MOSFET Transistor Scan PDF 184.57KB 5
    VN2406L
    Motorola TMOS FET Transistor Original PDF 58.57KB 4
    SF Impression Pixel

    VN24 Price and Stock

    Microchip Technology Inc

    Microchip Technology Inc VN2460N8-G

    Trans MOSFET N-CH Si 600V 0.2A 4-Pin(3+Tab) SOT-89 T/R
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    Microchip Technology Inc VN2450N8-G

    Trans MOSFET N-CH Si 500V 0.25A 4-Pin(3+Tab) SOT-89 T/R
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    Microchip Technology Inc VN2406L-G

    Trans MOSFET N-CH Si 240V 0.19A 3-Pin TO-92 Bag
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    Microchip Technology Inc VN2410L-G

    Trans MOSFET N-CH Si 240V 0.19A 3-Pin TO-92 Bag
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    Microchip Technology Inc VN2460N3-G

    Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 Bag
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    VN24 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    VN2410M

    Abstract: VN2410L
    Contextual Info: VN2410 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V (BR)DSS (V) r DS(ON) (Í1) (A) PACKAGE VN2410L 240 10 0.17 TO-92 VN2410M 240 10 0.19 TO-237 •d 1 SOURCE 2 GATE 3 DRAIN BOTTOM VIEW TO-237


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    vn2410o-226aavn2410lvn2410m+2o-237vndb24 PDF

    Siliconix TO-92S

    Contextual Info: TN2410L, VN2406D/L, VN241 OL/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY rDS(on) Max (Q) vGs(th)00 Id (A) TN2410L 1 0 V q s = 4 .5 V 0.5 to 1.8 0.18 VN2406D 6 @ V Gs = 1 0 V 0.8 to 2 1.12 6 ® VGS = 1 0 V 0.8 to 2 0.18 VN2410L 1 0 ® V qs = 1 0 V


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    tn2410lvn2406d/lvn241vn2406d+6vn2406lvn2410lvn2410lss-04279--16-jul-01siliconix to-92s PDF

    4E7 philips

    Abstract: KY 711 VN2406L FL 210 transistor
    Contextual Info: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n


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    711002bvn2406lmbb073711dfl5h+5d0bfl057mc93574e7 philipsky 711fl 210 transistor PDF

    VN2410

    Contextual Info: VN2410 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN2410 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    vn2410a020309 PDF

    VN2460

    Contextual Info: VN2460 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) VN2460 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


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    vn2460a020309 PDF

    VN24061

    Abstract: VN2406
    Contextual Info: VN2406 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) VN2406 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    vn2406a020309vn24061 PDF

    VN2460N8-G

    Abstract: TRANSISTOR LIZ
    Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


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    vn2460dsfp-vn2460a102108vn2460n8-g+1transistor liz PDF

    VN2450N8-G

    Abstract: vn4ew
    Contextual Info: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


    Original
    vn2450dsfp-vn2450a102108vn2450n8-g+1vn4ew PDF

    Contextual Info: VN2410 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    vn2410dsfp-vn2410a091508 PDF

    Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain


    Original
    vn2460dsfp-vn2460a011409 PDF

    VN2410L

    Abstract: 70204 TN2410L VN2406D VN2406L VN2410LS
    Contextual Info: TN2410L, VN2406D/E, VN2410L/LS Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) TN2410L VN2406D rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V


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    tn2410lvn2406d/evn2410l/lsvn2406d+6vn2410lvn2410lsvn2406ls-58620--rev21-jun-9970204 PDF

    Contextual Info: bbS3T31 D03MDfl3 552 * A P X P h ilip s S e m ic o n d u c to rs VN2406L Data sheet status Product specification date of issue July 1993 N-channel enhancem ent m ode vertical D-M O S transistor N AMER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING - TO-92 variant


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    bbs3t31d03mdfl3vn2406l00240flfl PDF

    VN2460

    Contextual Info: Supertex inc. VN2460 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) VN2460 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    vn2460a031710 PDF

    VN2450

    Contextual Info: Supertex inc. VN2450 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) VN2450 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    vn2450a031610 PDF

    sivn

    Abstract: vn4f mark A E sot-89 VN2460 125OC SOT89 mos VN2460N8-G 3V02 VN2460N3-G
    Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with


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    vn2460dsfp-vn2460a011409sivn+7vn4fmark a e sot-89125ocsot89 mosvn2460n8-g3v02vn2460n3-g PDF

    2406L

    Abstract: VN2406
    Contextual Info: VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


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    vn2406dsfp-vn2406a0413092406l PDF

    Contextual Info: VN2406L Preferred Device Small Signal MOSFET 200 mAmps, 240 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDSS 240 Vdc Drain–Gate Voltage VDGR 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs


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    vn2406lr14525vn2406l/d PDF

    VN4E

    Abstract: sot-89 MARKING CODE 4A VN2450 VN2450N3 VN2450N8
    Contextual Info: VN2450 VN2450 New Product N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-243AA* Die* 500V 13Ω 0.5A VN2450N3 VN2450N8 VN2450MW * Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.


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    vn2450o-243aavn2450n3vn2450n8+4vn2450mwot-89vn4esot-89 marking code 4a PDF

    sot-89 MARKING CODE 4A

    Abstract: VN2450 VN2450N3 VN2450N8 VN2450NW VN4E
    Contextual Info: VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-243AA* Die* 500V 13Ω 0.5A VN2450N3 VN2450N8 VN2450NW * Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.


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    vn2450o-243aavn2450n3vn2450n8+4vn2450nwot-89sot-89 marking code 4avn4e PDF

    sot89 fr5

    Abstract: vn4f VN2460 VN2460N3 VN2460N8 VN2460NW
    Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-243AA* Die* 600V 20Ω 0.25A VN2460N3 VN2460N8 VN2460NW * Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.


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    vn2460o-243aavn2460n3vn2460n8+4vn2460nwot-89sot89 fr5vn4f PDF

    oni 350

    Abstract: transistor c 4106 VN2406L
    Contextual Info: VN2406L* M AXIM UM RATINGS Sym bol Value Unit Drain-Source Voltage Voss 240 V Drain-Gate Voltage V d GR 60 V Vg S Vg s M 'd ±2 0 ±4 0 Vdc Vpk 200 mA 'd m 500 mA Pd 350 mW 2.8 m w rc - °C Rating Gate-Source Voltage - Continuous — Non-repetitive tD s 50 /is


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    vn2406lo-226aaoni 350transistor c 4106 PDF

    Contextual Info: VN2410B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)240 V(BR)GSS (V)240Í I(D) Max. (A)700m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)6.3 Minimum Operating Temp (øC)


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    vn2410b PDF

    2406L

    Abstract: VF25 VN2406
    Contextual Info: Supertex inc. VN2406 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


    Original
    vn2406dsfp-vn2406c0314112406l+1vf25 PDF

    Contextual Info: VN2406 VN2410 Super te x inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering information Order Number / Package BVDss I ^DS O N ' d (ON) bvms (max) (min) TO-92 240V 6.on 1.0A VN2406L 240V ion 1.0A VN2410L Features Advanced DMOS Technology □ Free from secondary breakdown


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    vn2406vn2410vn2406lvn2410l+1300ns PDF