VMOS TRANSISTOR Search Results

BD512 mosfet

Abstract: itt transistoren Relais ITT halbleiterwerk transistor 2N 3055 ITT Intermetall Leuchtdiode CQY 40 transistor BD 522 schaltregler BD512
Contextual Info: VMOS Transistoren Eigenschaften und Schaltungsbeispiele 6240-09-2 D INTERMETALL Halbleiterwerk der Deutsche ITT Industries GmbH VMOS-Transistoren Eigenschaften und Schaltungsbeispiele Zusammengestellt von folgenden Mitarbeitern der ITT Semiconductors Gruppe

BS212

Abstract: GG01 BS192
Contextual Info: I T T CORP/ I T T CMPNTS 41E D B 4bfi2bñ4 GG01403 b H I T O 'T '- 'll- 'L 'S VMOS TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETs featuring high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown,

BS192

Abstract: 10D3 BS170 v-mos din 41870 BS209
Contextual Info: ARR4955 I T T SEMICONDUCTORS 07 DE I 4hû 4TSS 87 D 0 2 3 2 5 D 7-. VMOS TRANSISTORS 0GDE3SS 2 N-Channel VMOS Transistors Enhancement-Mode MOSFETs featuring high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown,

BS192

Abstract: BS212 D 92 M - 03 DIODE D 92 M - 02 DIODE 10D3 2n3904, itt c 92 M - 02 DIODE bs189
Contextual Info: I T T CORP/ I T T CMPNTS 31E D • 4böEböH ÜQQ1 3 Q 7 T ■ VMOS NPN AND PNP TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETsfeaturing high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown, no thermal runaway.

intel 7110

Abstract: vmos fet intel 8085 INTEL 7254 vmos BPK70 DIODE S4 3a vmos to bubble memories 7254 coil driver
Contextual Info: intei 7254 QUAD VMOS DRIVE TRANSISTORS FOR BUBBLE MEMORIES Designed to Drive X and Y Coils of 7110 Bubble Memories • Operates from V qd Only No Bias Currents Required ■ VMOS FET Technology Fast Turn-on and Turn-off — 30 ns Maximum ■ N-Channel and P-Channel Transistors

Siliconix VMOS

Abstract: vmos vmos fet Siliconix Application Note AN76-3 VN46AF mosfet vn66af VMOS Transistor CD4011 VN66AF
Contextual Info: AN79-4 H Siliconix APPLICATION NOTE Driving VMOS Power FETs Dave Hoffm an January 1979 INTRODUCTION Using VMOS Pow er FETs you can achieve perform ance never before possible—if you drive them properly. This article describes circuits and suggests design m ethods to

1461 transistor

Abstract: 1461 TELEDYNE 1461
Contextual Info: WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from ±15V to +40V supplies, has output voltages up to ±34V, and output

TELEDYNE 1463

Abstract: 4025 to-3 ti211 vmos VMOS Transistor teledyne 4027
Contextual Info: TELEDYNE SaE D COMPONENTS M- a 'I^ b O S 0 0 ü ti211 s 1463 High Speed High Power VMOS Output Op Amp The 1463 is third in a series of high speed, FET input, VMOS output power op amps. It operates from ±15V to ±40V supplies and has a guaranteed output of ±28V at 1A with ±36V supplies.

TELEDYNE 1461

Abstract: TELEDYNE+1461
Contextual Info: TELEDYNE C O M PO N EN T S 3bE D • â^l?tOE DGG?fe.2b b « T S C * T * 7 0v- 0 ‘ 7 - \ C WTELEDYNE COMPONENTS 1461 OPERATIONAL AMPLIFIER — HIGH-SPEED, HIGH-POWER, VMOS-OUTPUT FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ The 1461 is an extremely fast, FET-input, VMOS-output, power operational amplifier. It operates from +15V to

VMOS Transistor

Abstract: BS170 v-mos AH47 BS170
Contextual Info: BS170 Enhancement Mode N-Channel VMOS Transistor Features: High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown 4 CD •si' — •HA rr ♦ r^‘ i m ax.Q 5$ Plastic case « JEDEC TO-92

transistor BD522

Abstract: transistor BD 522 BD522 vmos bd522 vmos VMOS Transistor
Contextual Info: BD522 Enhancement Mode N-Channel Power VMOS Transistor for applications needing high input impedance and fast switching times. TT un Features: High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway

VMOS Transistor

Abstract: BS250
Contextual Info: BS250 Enhancement Mode P-Channel VMOS Transistor Features: High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown m ax.Q 5# Plastic case ~ JEDEC TO-92 TO-18 compatible

intel 8085

Abstract: intel 7110 Bubble Memory 8086 8086 8088 vmos vmos to 7230 7904 BPK70
Contextual Info: inteT BPK70 1 MBIT BUBBLE STORAGE SUB-SYSTEM One 7250 Coil Pre-Driver Contains Components for Production of 1 MBit Bubble Storage Sub-System Two 7254 Quad VMOS Drive Transistors • One 7230 Current Pulse Generator One 7110 1 MBit Bubble Memory One 7242 Dual Formatter/Sense

VN66AK

Abstract: VMOS Transistor VN88AF Siliconix VMOS VN66AF equivalent VN46AF equivalent VN46AF VN98AK VMOS VN88AF SILICONIX
Contextual Info: AN77-2 s Silico n ix APPLICATION NOTE Don’t Trade Off Analog Switch Specs. V M O S -A Solution to High Speed, High Current, Low Resistance Analog Switches Walt Heinzer INTRODUCTION F or analog switches, Vertical MOS VMOS transistors give you a nearly ideal com bination o f characteristics—w ithout

vmos fet

Abstract: VMOS AUDIO AMPLIFIER vmos audio circuit MSK1461 MSK1461B
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions

A19 SMD transistor

Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 1461 HIGH SPEED/VOLTAGE OP AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Extremely Fast - 500v/µS Wide Supply Range ±15V to ±45V VMOS Output, No Secondary Breakdown

Contextual Info: KENNEDY H S M.S. KENNEDY CORP. CORP b3E D • S1343D0 D0002D2 HIGH SPEED/VOLTAGE OP AMP SS2 ■ MSK 1461 (315) 699-9201 8170 Thompson Road • Cicero, N.Y. 13039 FEATURES: • • • • • • Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions

sk1461

Abstract: sk 100 transistor
Contextual Info: M í f t H,GH SPoEpEampOLTAGE 1 4 6 1 M .S . K E N N E D Y C O R P 315 699-9201 8170 Thompson Road •Cicero, N.Y. 13039 FEATURES: Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions Large Galn-Bandwldth Product FET Input

TELEDYNE PHILBRICK

Abstract: TELEDYNE PHILBRICK 15v, 50 mA power supply Philbrick T1460 TELEDYNE PHILBRICK 1460 teledyne 1460 teledyne video
Contextual Info: TELEDYNE COMPONENTS 2ÖE D IH 0T17tiGH ÜQQbBüS T • 1460 High Power VMOS Output Operational Amplifier The 1460 heralds a new era in high power, wideband opera­ tional amplifiers. Originally designed for ATE signal amplifica­ tion and pin driving, the 1460 surpasses its competition in speed

TELEDYNE PHILBRICK

Contextual Info: 1460 High Power VMOS Output Operational Amplifier The 1460 heralds a new era in high power, wideband opera­ tional amplifiers. Originally designed for ATE signal am plifica­ tion and pin driving, the 1460 surpasses its com petition in speed and output capabilities with a 1GHz gain-bandwidth product, a

n-channel enhancement mode vmos power fet

Abstract: DV1201K
Contextual Info: M/A-con p h i as in c be |sb4aaos DDoamo N-CHANNEL ENHANCEMENT-MODE RF POWER FETs DV1201K i * W~ d 7 ^ j/; i î M/A-COM PHI, INC" The DV1201K is a VMOS N-channel enhancement mode RF power FET in a TO-39 package. This 1W device is ideal for low level amplifier or oscillator applications

ARCO

Contextual Info: H I INC 5 6 4 2 2 1S_M ZA^CDIL ÖS DE I 85D Sb4EEGS 00454 D DDGQ4SM N-CHANNEL ENHANCEMENT-MODE RF POw E r FETs M DV2860T, DV2860U fa C Q * M/A-COM PHI, INC. The DV2860 is a VMOS N-channel enhancement mode RF power FET. This 60W device is ideal for high power final amplifier applications, push-pull or single end­

cm500ha-34a

Abstract: vmos CM100DY-34A CM400DY-34A series connection igbt cm200dy-34a IGBT cross CM100DU-34KA CM200DU-34KA CM300DY-34A
Contextual Info: NEW 1700V A-SERIES IGBT MODULES WITHS CSTBT AND IMPROVED FWDi By Nicholas Clark1, John Donlon1, Shinichi Iura2 1 Powerex Inc., Youngwood, PA, USA 2) Power Device Works, Mitsubishi Electric Corp., Fukuoka, Japan Abstract: This paper presents a new series of 1700V IGBT Insulated Gate Bipolar Transistor) modules using

VMOS Transistor

Abstract: block diagram of intel 8255 chip vmos intel 8085 bubble memory BPK70 INTEL 7250
Contextual Info: ¡y G M Ä liW in te l 7250 COIL PRE-DRIVER FOR BUBBLE MEMORIES • Very Low Power Only One Power Supply Required, + 12V ■ Power Fail Reset for Maximum Protection of Bubble Memory CMOS Technology ■ TTL Compatible Inputs Standard 16-Piri Dual In-Line Package