VERTICAL Search Results

T0T7250

Abstract: FS1N
Contextual Info: TCD6162AU GEN ERAL The TC6162AU is a C M O S LSI chip for generating NTSC television synchronization signals and operating a 400,000- pixel FITCCD area image sensor. This chip covers the electronic shutter m ode of 1 /60 to 1 / 2000 seconds. It has a vertical reset pin that enables

toshiba 2505 dd

Contextual Info: TOSHIBA TENTATIVE TPD1028AS TOSHIBA INTELLIGENT PO W ER DEVICE SILICON MONOLITHIC PO W ER MOS IC TPD1028AS LOW -SIDE SWITCH FOR M O TO R , SOLENOID A N D LAM P DRIVE TPD1028AS is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly

Contextual Info: SM/SMJ34061 VIDEO SYSTEM CONTROLLER JULY 1 98 7 • Generates User-Programmable Control Signals Horizontal Sync, Vertical Sync, and Blanking Which Support a Broad Range of Raster-Scan Display Systems with Varying Resolutions and Scan Rates S M J 3 4 0 6 1 G B . . . 68-P IN PGA

2SC3296

Abstract: IC vertical lg
Contextual Info: 2SC3296 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm VERTICAL OUTPUT APPLICATIONS. 1 Û3MAX. 03.2±Q2 FEATURES: . Wide Safe Operating Area. . Complementary to 2SA1304. 1.2 + 0.2 5 0.76-0-15 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

Contextual Info: TOSHIBA TENTATIVE TPD1035F TOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS IC TPD1035F LOW-SIDE POWER SWITCH FOR MOTOR, SOLENOID, AND LAMP DRIVERS TPD1035F is a monolithic power IC for low-side switch. The IC has a vertical MOSFET output which can be directly

2Sc2073

Abstract: 2Sa940 2-10a1a
Contextual Info: 2 S C 2 0 7 3 SILICQNNPN triple pffusedtype pcj process Unit in mm PO W ER AMPLIFIER APPLICATIONS. VERTICAL OUTPUT APPLICATIONS. • • Wide Safe Operating Area. Complementary to 2SA940 SlO< M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

T0T7250

Abstract: hoya Filter ND 0.3
Contextual Info: TCD5311BD GENERAL TCD5311BD is an interline CCD area image sensor developed for a PAL/SECAM system Color television camera. This device has signal pixels of 681 horizontal x 582 (vertical), and its image size agrees with 1/2 inch type optical system. This device offers high sensitivity and high resolution,

Contextual Info: Electronics Standard Edge II Card Edge Connectors Solder Type Board-to-Board Connectors .100 [2.54] Centerline Vertical Solder Posts, Retention Feature, Without Mounting Ears M a te ria l and F in is h : .064 [1.63] Sq. X .130 [3.301 Dp. — Intercontact Key Slot

Contextual Info: TPD1053F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1053F Motor, Solenoid, Lamp Drivers High-side Power Switch The TPD1053F is a monolithic power IC for high-side switches. The IC has a vertical MOSFET output which can be directly

D1285

Abstract: binding post
Contextual Info: Pomona Model 1285 Phone Plug Adapter With Binding Posts FEATURES: • Converts Standard Phone Jacks to Double Binding Posts. • Banana Plugs can be stacked vertically or horizontally. • Wires, spade lugs and pin tip plugs can be attached by means of the insulated knurl thumb knob.

Contextual Info: Product Number: 855-22-006-30-001101 Description: Interconnect Header Spring-Loaded Header Vertical Mount Double Row Surface Mount Plating Code: 22 Shell Plating: 20 " Gold over 100 μ" Nickel Packaging: Packaged in Tubes # Of Pins Mill-Max Part Number

CHN 550

Contextual Info: VSP1900 SLES062 – MARCH 2003 CCD VERTICAL DRIVER FOR DIGITAL CAMERAS FEATURES D CCD Vertical Driver: – Three Field CCD Support – Two Field CCD Support D Output Drivers: – 3 Levels Driver V-Transfer x 5 – 2 Levels Driver (V-Transfer) x 3 – 2 Levels Driver (E-Shutter) x 1

Contextual Info: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si3453DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

S12-1319

Contextual Info: SPICE Device Model Si7820DN www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si7625DN

Abstract: mosfet 4430 si7625 S10-2503
Contextual Info: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiZ730DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiZ790DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

s1124

Contextual Info: SPICE Device Model Si5999EDU www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SPICE Device Model SiS698DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Vertical Test Jack Insulated: Formed Contact SPECIFICATIONS: Contact: Beryllium copper per QQ-C-533 Finish: Gold or Silver Body: Nylon 6/6 per ASTM D4066 INCHES MILLIMETERS CUSTOMER DRAWINGS AVAILABLE UPON REQUEST RATINGS Current: 5 amps Breakdown Voltage: 3500 Vrms minimum

2SC1309

Abstract: 2sc13
Contextual Info: Inchange Semiconductor Product Specification 2SC1309 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV vertical deflection output applications PINNING see fig.2 PIN DESCRIPTION 1 Base 2 Emitter

62630

Contextual Info: SPICE Device Model SiA920DJ www.vishay.com Vishay Siliconix Dual N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C