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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIS698DN-T1-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 6.9A 1212-8	Original	PDF	573.2KB

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Vishay Intertechnologies


Vishay Intertechnologies SIS698DN-T1-GE3 N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIS698DN-T1-GE3)
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Avnet Americas	SIS698DN-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.27	Buy Now
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SIS698DN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SPICE Device Model SiS698DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sis698dn 11-mar-11	PDF
Contextual Info: SiS698DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 100 0.195 at VGS = 10 V 6.9 0.230 at VGS = 6 V 6.4 Qg (Typ.) 5.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	sis698dn 2002/95/ec sis698dn-t1-ge3 11-mar-11	PDF
Contextual Info: SiS698DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 100 0.195 at VGS = 10 V 6.9 0.230 at VGS = 6 V 6.4 Qg (Typ.) 5.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	sis698dn 2002/95/ec sis698dn-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: SiS698DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 100 0.195 at VGS = 10 V 6.9 0.230 at VGS = 6 V 6.4 Qg (Typ.) 5.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	sis698dn 2002/95/ec sis698dn-t1-ge3 11-mar-11	PDF
Contextual Info: SPICE Device Model SiS698DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sis698dn 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: SiS698DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 100 0.195 at VGS = 10 V 6.9 0.230 at VGS = 6 V 6.4 Qg (Typ.) 5.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	sis698dn 2002/95/ec sis698dn-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
a 19946 Contextual Info: SiS698DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sis698dn an609 3357m 2777m +70657m 2267m 0874u 1057m 2436m 4315u a 19946	PDF
Contextual Info: SiS698DN Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 100 0.195 at VGS = 10 V 6.9 0.230 at VGS = 6 V 6.4 Qg (Typ.) 5.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	sis698dn 2002/95/ec sis698dn-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF