VEBO 25 Search Results

2sc3114

Abstract: 2SA1246 2sa124
Contextual Info: Ordering num ber:EN 1047B 2SA1246/2SC3114 NO.1047B PNP/ NPN Epitaxial Planar Silicon Transistors High-VEBO> AF Amp Applications Features • High VEBO • Wide ASO and highly resistant to breakdown { : 2SA1246 Absolute Maximum Ratings/Ta = 25°C Collector to base voltage

VEBO-15V

Abstract: 2SC4181A VEBO15V High Vebo MARKING L15
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4181A Features High DC current gain:Hfe=1000 to 3200 Low VCE sat : VCE(sat)=0.07v TYP High VEBO: VEBO=15V 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: 2SD2537 Datasheet NPN 1.2A 25V Middle Power Transistor lOutline Parameter Value VCEO IC 25V 1.2A MPT3 Base Collector Emitter 2SD2537 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) High DC Current gain hFE= 820 to 1,800 3) High VEBO VEBO=12V(Min.)

wt smd

Abstract: vebo Transistors marking WT SMD MARKING 2SC4694 WT SMD MARKING
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

High Vebo

Abstract: 2SC3134 2SA1252 EN1048B
Contextual Info: Ordering number:EN1048B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 High VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and high durability against breakdown. unit:mm 2018A [2SA1252/2SC3134] C : Collector B : Base

VEBO-15V

Abstract: 2SC4390 npn smd 2a
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4390 Features Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V).

transistor marking wt

Abstract: SMD TRANSISTOR MARKING BR smd transistor marking 36 2SC4695 MARKING SMD NPN TRANSISTOR BR high vebo
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4695 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 High VEBO VEBO 25V . 1 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 Adoption of FBET process. 2 +0.1 0.95-0.1 +0.1 1.9-0.1

VEBO-15V

Abstract: 2SC3651
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3651 Features High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO VEBO 15V Very small size making it easy to provide high-density small-sized hybrid IC's.

smd marking ks

Abstract: 2SA1813 VEBO-15V
Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1813 Features Very small-sized package. Adoption of FBET process. High DC current gain hFE=500 to 1200 . Low collector-to-emitter saturation voltage 0.3V). (VCE(sat) High VEBO (VEBO 15V).

SMD TRANSISTOR MARKING BR

Abstract: MARKING SMD NPN TRANSISTOR BR 2SC4705 VEBO-15V transistor smd marking BR SMD BR 12
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4705 Features High DC current gain hFE=800 to 3200 . Low collector-to-emitter saturation voltage : VCE(sat) 0.5V max. High VEBO : VEBO 15V. Small size making it easy to provide high-density,

Contextual Info: Transistors IC SMD Type Product specification 2SA1813 Features Very small-sized package. Adoption of FBET process. High DC current gain hFE=500 to 1200 . Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V). 1 Emitter 2 Base 3 Collector

2N6421

Contextual Info: Back to Bipolar Power Transistors 2N6421 MAXIMUM RATINGS - Absolute-M aximum Values: VcBO_. Vceo sus . Vebo.

Contextual Info: Product specification 2SA1434 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Adoption of FBET process. 0.4 3 VCE(sat 0.5V). 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 15V). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High VEBO (VEBO 0.55 Low collector-to-emitter saturation voltage

2N5415

Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4 2N5416CSM4 • Silicon Planar PNP Transistor • Hermetic Ceramic Surface Mounted Package. • Hi-Rel Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO

CMUT3904

Abstract: CMUT3906 Marking Code For
Contextual Info: CMUT3904 NPN CMUT3906 PNP ULTRAmini SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-523 CASE MAXIMUM RATINGS: TA=25°C SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

MSC1651

Contextual Info: MS2176 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS TCASE = 25°C Symbol VCBO VCES VEBO IC

MARKING SMD npn TRANSISTOR 1a

Abstract: MARKING SMD NPN TRANSISTOR BR transistor smd marking cu 2SC5069 SMD TRANSISTOR 1A NPN VEBO-15V
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC5069 Features High current capacity. Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

Contextual Info: ON Semiconductort High Voltage Transistors BF422 NPN Silicon MAXIMUM RATINGS Rating Symbol BF422 Unit Collector −Emitter Voltage VCEO 250 Vdc Collector −Base Voltage VCBO 250 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC

Contextual Info: ON Semiconductort MSC3130T1 NPN RF Amplifier Transistor Surface Mount ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage VCBO 15 Vdc Collector–Emitter Voltage VCEO 10 Vdc Emitter–Base Voltage VEBO

13002a

Abstract: 13002C TRANSISTOR TCD 100 13002B TRANSISTOR NPN 13002e transistor 13002e 13002B 13002 FLUORESCENT LAMPS CFLS 13002b TRANSISTOR
Contextual Info: CD13002 TO-92 PLASTIC PACKAGE NPN SILICON PLANAR EPITAXIAL,HIGH VOLTAGE FAST SWITCHING POWER TRANSISTOR Compact Fluorescent Lamps CFLS E ABSOLUTE MAXIMUM RATING (Ta =25ºC ) DESCRIPTION SYMBOL VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO

Contextual Info: Absolute maximum ratings Ta=25oC Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 20 11 3 50

MMBT8050DW

Abstract: mmbt8050
Contextual Info: MMBT8050W 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO