VEBO 25 Search Results

2SC3134

Contextual Info: 2SA1252 / 2SC3134 Ordering number : EN1048D 2SA1252 / 2SC3134 PNP / NPN Epitaxial Planar Silicon Transistors High VEBO, AF Amp Applications Features • • High VEBO. Wide ASO and high durability against breakdown. Specifications : 2SA1252 Absolute Maximum Ratings at Ta=25°C

EN3486

Abstract: 2SC4695 vebo 25
Contextual Info: Ordering num ber: EN3486 SAWO No.3486 _ 2SC4695 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Muting Applications i Features • Adoption of FBET process - High DC current gain • High VEbo VEbo ^ 25V • High reverse h^E (150 typ)

2sc3114

Abstract: 2SA1246 2sa124
Contextual Info: Ordering num ber:EN 1047B 2SA1246/2SC3114 NO.1047B PNP/ NPN Epitaxial Planar Silicon Transistors High-VEBO> AF Amp Applications Features • High VEBO • Wide ASO and highly resistant to breakdown { : 2SA1246 Absolute Maximum Ratings/Ta = 25°C Collector to base voltage

VEBO-15V

Abstract: 2SC4181A VEBO15V High Vebo MARKING L15
Contextual Info: Transistors IC SMD Type NPN Silicon Epitaxia 2SC4181A Features High DC current gain:Hfe=1000 to 3200 Low VCE sat : VCE(sat)=0.07v TYP High VEBO: VEBO=15V 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: 2SD2537 Datasheet NPN 1.2A 25V Middle Power Transistor lOutline Parameter Value VCEO IC 25V 1.2A MPT3 Base Collector Emitter 2SD2537 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) High DC Current gain hFE= 820 to 1,800 3) High VEBO VEBO=12V(Min.)

wt smd

Abstract: vebo Transistors marking WT SMD MARKING 2SC4694 WT SMD MARKING
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC4694 Features Adoption of MBIT process. High DC current gain. High VEBO VEBO 25V . High reverse hFE (150 typ). Small ON resistance [Ron=1Ù (IB=5mA)]. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

2sc3114

Abstract: 2SA1246 high vebo
Contextual Info: Ordering number:EN1047B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and highly resistant to breakdown. unit:mm 2003A [2SA1246/2SC3114] B:Base C:Collector

2SC3134

Abstract: 2SA1252 ITR03076 ITR03077
Contextual Info: 2SA1252 / 2SC3134 Ordering number : EN1048D SANYO Semiconductors DATA SHEET 2SA1252 / 2SC3134 PNP / NPN Epitaxial Planar Silicon Transistors High VEBO, AF Amp Applications Features • • High VEBO. Wide ASO and high durability against breakdown. Specifications : 2SA1252

High Vebo

Abstract: 2SC3134 2SA1252 EN1048B
Contextual Info: Ordering number:EN1048B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 High VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and high durability against breakdown. unit:mm 2018A [2SA1252/2SC3134] C : Collector B : Base

2SA1246

Abstract: 2sc3114 ITR03038 ITR03039 ITR03040
Contextual Info: Ordering number:ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and highly resistant to breakdown. unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 5.0 4.0 0.6

VEBO-15V

Abstract: 2SC4390 npn smd 2a
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4390 Features Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V).

transistor marking wt

Abstract: SMD TRANSISTOR MARKING BR smd transistor marking 36 2SC4695 MARKING SMD NPN TRANSISTOR BR high vebo
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4695 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 High VEBO VEBO 25V . 1 0.55 High DC current gain. +0.1 1.3-0.1 +0.1 2.4-0.1 Adoption of FBET process. 2 +0.1 0.95-0.1 +0.1 1.9-0.1

VEBO-15V

Abstract: 2SC3651
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3651 Features High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO VEBO 15V Very small size making it easy to provide high-density small-sized hybrid IC's.

2SA1252

Abstract: 2SC3134 ITR03076 ITR03077 ITR03078
Contextual Info: Ordering number:ENN1048C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 High VEBO, AF Amp Applications Features Package Dimensions • High VEBO. · Wide ASO and high durability against breakdown. unit:mm 2018B 0.4 0.16 0 to 0.1 1 : Base 2 : Emitter

SMD TRANSISTOR MARKING BR

Abstract: MARKING SMD NPN TRANSISTOR BR 2SC4705 VEBO-15V transistor smd marking BR SMD BR 12
Contextual Info: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4705 Features High DC current gain hFE=800 to 3200 . Low collector-to-emitter saturation voltage : VCE(sat) 0.5V max. High VEBO : VEBO 15V. Small size making it easy to provide high-density,

Contextual Info: Transistors IC SMD Type Product specification 2SA1813 Features Very small-sized package. Adoption of FBET process. High DC current gain hFE=500 to 1200 . Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). High VEBO (VEBO 15V). 1 Emitter 2 Base 3 Collector

2N6421

Contextual Info: Back to Bipolar Power Transistors 2N6421 MAXIMUM RATINGS - Absolute-M aximum Values: VcBO_. Vceo sus . Vebo.

Contextual Info: Product specification 2SA1434 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Adoption of FBET process. 0.4 3 VCE(sat 0.5V). 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 15V). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High VEBO (VEBO 0.55 Low collector-to-emitter saturation voltage

2SC4536

Abstract: 2SC454 2SC4568 T74100
Contextual Info: h:7 « S ±S ’ . S § m • 2 S C 4 5 3 6 : -7-i 5 afäimmVIWiHSo MiimvmtcMMv m i n * «Ä B l! Vceo (V 15 CATV"? Vebo (V) 3 Ic(mA) 250 Pt (W>* 2 T j (°C) 150 * « u s w 0 2 S C 4 5 3 7 S SL d i S : VHF/UHF ß v f i g i f t a M SHF Vceo (V) 11 Vebo (V)

Contextual Info: “BIG IDEAS IN BIG POWER ” • PowerTecn 150 AMPERE TRANSISTOR PT-2523 PT-2524 FEATURES PT-2524 PT-2523 . 450V 400V . . 500V 450V . . V Ctx • • ■ ■ Vebo . 8V lc . 100A

2SA1952

Abstract: 2SC5103 High speed switching Transistor
Contextual Info: 2SC5103 Transistors High speed switching transistor 60V, 5A 2SC5103 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current Collector power dissipation

Contextual Info: NPN SILICON SWITCHING TRANSISTOR 2N5785N1 • Hermetic SMD0.5 Metal package. • Ideally Suited for Linear Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC

2SC5103

Abstract: 2SA1952 2SA19
Contextual Info: 2SC5103 Transistors High speed switching transistor 60V, 5A 2SC5103 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current Collector power dissipation